SG10201601703UA - Multi-step voltage for forming resistive random access memory (rram) cell filament - Google Patents

Multi-step voltage for forming resistive random access memory (rram) cell filament

Info

Publication number
SG10201601703UA
SG10201601703UA SG10201601703UA SG10201601703UA SG10201601703UA SG 10201601703U A SG10201601703U A SG 10201601703UA SG 10201601703U A SG10201601703U A SG 10201601703UA SG 10201601703U A SG10201601703U A SG 10201601703UA SG 10201601703U A SG10201601703U A SG 10201601703UA
Authority
SG
Singapore
Prior art keywords
rram
random access
access memory
resistive random
step voltage
Prior art date
Application number
SG10201601703UA
Other languages
English (en)
Inventor
Feng Zhou
Xian Liu
Hieu Van Tran
Hung Quoc Nguyen
Nhan Do
Mark Reiten
Zhixian Chen
Wang Xinpeng
Guo-Qiang Lo
Original Assignee
Silicon Storage Tech Inc
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Storage Tech Inc, Agency Science Tech & Res filed Critical Silicon Storage Tech Inc
Priority to SG10201601703UA priority Critical patent/SG10201601703UA/en
Priority to US15/404,087 priority patent/US9959927B2/en
Priority to PCT/US2017/017543 priority patent/WO2017151296A1/en
Priority to CN201780014845.8A priority patent/CN108886094A/zh
Priority to KR1020187028526A priority patent/KR101981911B1/ko
Priority to JP2018544244A priority patent/JP2019511803A/ja
Priority to EP17760463.4A priority patent/EP3424087A4/en
Priority to TW106106805A priority patent/TWI621122B/zh
Publication of SG10201601703UA publication Critical patent/SG10201601703UA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
SG10201601703UA 2016-03-04 2016-03-04 Multi-step voltage for forming resistive random access memory (rram) cell filament SG10201601703UA (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SG10201601703UA SG10201601703UA (en) 2016-03-04 2016-03-04 Multi-step voltage for forming resistive random access memory (rram) cell filament
US15/404,087 US9959927B2 (en) 2016-03-04 2017-01-11 Multi-step voltage for forming resistive access memory (RRAM) cell filament
PCT/US2017/017543 WO2017151296A1 (en) 2016-03-04 2017-02-10 Multi-step voltage for forming resistive random access memory (rram) cell filament
CN201780014845.8A CN108886094A (zh) 2016-03-04 2017-02-10 用于形成电阻式随机存取存储器(rram)单元细丝的多阶电压
KR1020187028526A KR101981911B1 (ko) 2016-03-04 2017-02-10 저항성 랜덤 액세스 메모리(rram) 셀 필라멘트를 형성하기 위한 다중-단차 전압
JP2018544244A JP2019511803A (ja) 2016-03-04 2017-02-10 抵抗変化型メモリ（ｒｒａｍ）セルフィラメントを形成するためのマルチステップ電圧
EP17760463.4A EP3424087A4 (en) 2016-03-04 2017-02-10 MULTI-STAGE VOLTAGE FOR FORMING A CELL FILAMENT OF A RESISTIVE DIRECT ACCESS MEMORY (RRAM)
TW106106805A TWI621122B (zh) 2016-03-04 2017-03-02 用於形成電阻式隨機存取記憶體(rram)單元細絲的多階電壓

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201601703UA SG10201601703UA (en) 2016-03-04 2016-03-04 Multi-step voltage for forming resistive random access memory (rram) cell filament

Publications (1)

Publication Number Publication Date
SG10201601703UA true SG10201601703UA (en) 2017-10-30

Family

ID=60156976

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201601703UA SG10201601703UA (en) 2016-03-04 2016-03-04 Multi-step voltage for forming resistive random access memory (rram) cell filament

Country Status (7)

Country Link
US (1) US9959927B2 (ko)
EP (1) EP3424087A4 (ko)
JP (1) JP2019511803A (ko)
KR (1) KR101981911B1 (ko)
CN (1) CN108886094A (ko)
SG (1) SG10201601703UA (ko)
TW (1) TWI621122B (ko)

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DE112017006212T5 (de) 2016-12-09 2019-08-29 Microsemi Soc Corp. Resistive Speicherzelle mit wahlfreiem Zugriff
DE112018004134T5 (de) 2017-08-11 2020-04-23 Microsemi Soc Corp. Schaltlogik und verfahren zur programmierung von resistiven direktzugriffs-speichervorrichtungen
US10515697B1 (en) * 2018-06-29 2019-12-24 Intel Corporation Apparatuses and methods to control operations performed on resistive memory cells
KR102670952B1 (ko) * 2019-07-16 2024-05-30 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작 방법
CN114257257B (zh) * 2021-12-17 2023-04-25 清华大学深圳国际研究生院 一种多阶峰值检测脉冲超宽带接收机

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TWI355661B (en) * 2003-12-18 2012-01-01 Panasonic Corp Method for using a variable-resistance material as
WO2008016833A2 (en) * 2006-07-31 2008-02-07 Sandisk 3D Llc Increasing write voltage pulse operations in non-volatile memory
KR100755409B1 (ko) 2006-08-28 2007-09-04 삼성전자주식회사 저항 메모리 소자의 프로그래밍 방법
US7474561B2 (en) 2006-10-10 2009-01-06 Sandisk Corporation Variable program voltage increment values in non-volatile memory program operations
KR100809339B1 (ko) 2006-12-20 2008-03-05 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
TWI517156B (zh) * 2008-02-29 2016-01-11 Toshiba Kk Semiconductor memory device
US20100067290A1 (en) * 2008-09-15 2010-03-18 Savransky Semyon D Method of programming of phase-change memory and associated devices and materials
US8040721B2 (en) 2009-08-31 2011-10-18 Sandisk 3D Llc Creating short program pulses in asymmetric memory arrays
US8848430B2 (en) 2010-02-23 2014-09-30 Sandisk 3D Llc Step soft program for reversible resistivity-switching elements
JP5044669B2 (ja) * 2010-03-24 2012-10-10 株式会社東芝 半導体記憶装置
JP5132703B2 (ja) * 2010-03-23 2013-01-30 株式会社東芝 不揮発性半導体記憶装置
US8274812B2 (en) * 2010-06-14 2012-09-25 Crossbar, Inc. Write and erase scheme for resistive memory device
JP5300798B2 (ja) 2010-07-28 2013-09-25 株式会社東芝 半導体記憶装置
CN102610272B (zh) 2011-01-19 2015-02-04 中国科学院微电子研究所 一种阻变存储器单元的编程和擦除方法及装置
US8958233B2 (en) * 2011-10-18 2015-02-17 Micron Technology, Inc. Stabilization of resistive memory
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KR101996020B1 (ko) * 2012-02-08 2019-07-04 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 쓰기 방법
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Also Published As

Publication number Publication date
EP3424087A4 (en) 2019-11-06
TW201802817A (zh) 2018-01-16
TWI621122B (zh) 2018-04-11
KR20180113631A (ko) 2018-10-16
KR101981911B1 (ko) 2019-05-23
JP2019511803A (ja) 2019-04-25
EP3424087A1 (en) 2019-01-09
CN108886094A (zh) 2018-11-23
US9959927B2 (en) 2018-05-01
US20170316823A1 (en) 2017-11-02

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