SG10201506220PA - Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices - Google Patents
Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devicesInfo
- Publication number
- SG10201506220PA SG10201506220PA SG10201506220PA SG10201506220PA SG10201506220PA SG 10201506220P A SG10201506220P A SG 10201506220PA SG 10201506220P A SG10201506220P A SG 10201506220PA SG 10201506220P A SG10201506220P A SG 10201506220PA SG 10201506220P A SG10201506220P A SG 10201506220PA
- Authority
- SG
- Singapore
- Prior art keywords
- mechanical
- electrical
- optical devices
- substrate materials
- chemically mechanically
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000003287 optical effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38072310P | 2010-09-08 | 2010-09-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201506220PA true SG10201506220PA (en) | 2015-09-29 |
Family
ID=45810176
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201506220PA SG10201506220PA (en) | 2010-09-08 | 2011-09-06 | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
SG2013017264A SG188460A1 (en) | 2010-09-08 | 2011-09-06 | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013017264A SG188460A1 (en) | 2010-09-08 | 2011-09-06 | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
Country Status (11)
Country | Link |
---|---|
US (1) | US20130161285A1 (ja) |
EP (1) | EP2614123B1 (ja) |
JP (1) | JP6196155B2 (ja) |
KR (1) | KR101907863B1 (ja) |
CN (1) | CN103189457B (ja) |
IL (1) | IL225085A (ja) |
MY (1) | MY164859A (ja) |
RU (1) | RU2577281C2 (ja) |
SG (2) | SG10201506220PA (ja) |
TW (1) | TWI538989B (ja) |
WO (1) | WO2012032469A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012046179A1 (en) | 2010-10-07 | 2012-04-12 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
CN108276915A (zh) | 2010-12-10 | 2018-07-13 | 巴斯夫欧洲公司 | 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法 |
US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
JP6375623B2 (ja) * | 2014-01-07 | 2018-08-22 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
JP6420260B2 (ja) * | 2014-01-31 | 2018-11-07 | Hoya株式会社 | 磁気ディスク用基板の製造方法及び磁気ディスクの製造方法 |
US9551075B2 (en) | 2014-08-04 | 2017-01-24 | Sinmat, Inc. | Chemical mechanical polishing of alumina |
JP6536176B2 (ja) * | 2015-05-27 | 2019-07-03 | 日立化成株式会社 | サファイア用研磨液、貯蔵液及び研磨方法 |
US10032644B2 (en) * | 2015-06-05 | 2018-07-24 | Versum Materials Us, Llc | Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives |
KR101715931B1 (ko) * | 2015-12-11 | 2017-03-14 | 주식회사 케이씨텍 | 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물 |
KR20170076191A (ko) * | 2015-12-24 | 2017-07-04 | 주식회사 케이씨텍 | 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물 |
WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
SG11201908858SA (en) | 2017-03-27 | 2019-10-30 | Hitachi Chemical Co Ltd | Slurry and polishing method |
JP2019050307A (ja) * | 2017-09-11 | 2019-03-28 | 株式会社フジミインコーポレーテッド | 研磨方法、ならびに研磨用組成物およびその製造方法 |
JP6985904B2 (ja) * | 2017-11-28 | 2021-12-22 | 花王株式会社 | 研磨液組成物 |
US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
US11572490B2 (en) * | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
WO2019182061A1 (ja) * | 2018-03-22 | 2019-09-26 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
WO2020021680A1 (ja) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
US20200095502A1 (en) * | 2018-09-26 | 2020-03-26 | Versum Materials Us, Llc | High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP) |
US10763119B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
TW202405102A (zh) * | 2022-07-29 | 2024-02-01 | 美商聖高拜陶器塑膠公司 | 用於進行材料移除操作之組成物及方法 |
CN116063929A (zh) * | 2023-01-03 | 2023-05-05 | 广东粤港澳大湾区黄埔材料研究院 | 一种a向蓝宝石衬底抛光液及其制备方法 |
Family Cites Families (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2610705C3 (de) | 1976-03-13 | 1978-10-19 | Henkel Kgaa, 4000 Duesseldorf | Saure galvanische Kupferbäder |
US5478882A (en) | 1987-09-21 | 1995-12-26 | The Geon Company | Articles from reinforced plasticized polyvinyl halide resin |
US5057560A (en) | 1987-10-05 | 1991-10-15 | Ciba-Geigy Corporation | Thermotropic copolymer hydrogels from N,N-dimethylacrylamide and methoxy-ethyl (meth) acrylate |
FR2694939B1 (fr) | 1992-08-20 | 1994-12-23 | Schlumberger Cie Dowell | Polymères thermoviscosifiants, leur synthèse et leurs applications notamment dans l'industrie pétrolière. |
US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
EP2164095A1 (en) * | 1996-09-30 | 2010-03-17 | Hitachi Chemical Co., Ltd. | Cerium oxide abrasive and method of polishing substrates |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6110396A (en) | 1996-11-27 | 2000-08-29 | International Business Machines Corporation | Dual-valent rare earth additives to polishing slurries |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
TW510917B (en) | 1998-02-24 | 2002-11-21 | Showa Denko Kk | Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same |
US7547669B2 (en) | 1998-07-06 | 2009-06-16 | Ekc Technology, Inc. | Remover compositions for dual damascene system |
US6299659B1 (en) | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
EP1036836B1 (en) | 1999-03-18 | 2004-11-03 | Kabushiki Kaisha Toshiba | Aqueous dispersion for chemical mechanical polishing |
US7425581B2 (en) | 1999-07-30 | 2008-09-16 | Universiteit Utrecht | Temperature sensitive polymers |
US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
DE10006538C2 (de) | 2000-02-15 | 2002-11-28 | Forsch Pigmente Und Lacke E V | Verfahren zur Beschichtung von Partikeln mit LCST-Polymeren |
JP2001240850A (ja) | 2000-02-29 | 2001-09-04 | Sanyo Chem Ind Ltd | 研磨用砥粒分散剤および研磨用スラリー |
KR100378180B1 (ko) | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
US7381279B2 (en) * | 2000-06-14 | 2008-06-03 | The Procter & Gamble Company | Article for deionization of water |
EP1197587B1 (en) | 2000-10-13 | 2006-09-20 | Shipley Co. L.L.C. | Seed layer repair and electroplating bath |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
CN1746255B (zh) * | 2001-02-20 | 2010-11-10 | 日立化成工业株式会社 | 抛光剂及基片的抛光方法 |
FR2824832B1 (fr) | 2001-05-16 | 2005-05-27 | Oreal | Polymeres hydrosolubles a squelette hydrosoluble et a unites laterales a lcst, leur procede de preparation, compositions aqueuses les contenant, et leur utilisation dans le domaine cosmetique |
DE10152993A1 (de) | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
AU2003233400A1 (en) | 2002-03-15 | 2003-09-29 | The Penn State Research Foundation | Method for control of temperature-sensitivity of polymers in solution |
JP3516446B2 (ja) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
US6616514B1 (en) * | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
US6645265B1 (en) | 2002-07-19 | 2003-11-11 | Saint-Gobain Ceramics And Plastics, Inc. | Polishing formulations for SiO2-based substrates |
DE10243438A1 (de) | 2002-09-18 | 2004-03-25 | Merck Patent Gmbh | Oberflächenmodifizierte Effektpigmente |
DE10254430A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
EP1422320A1 (en) | 2002-11-21 | 2004-05-26 | Shipley Company, L.L.C. | Copper electroplating bath |
DE10254432A1 (de) | 2002-11-21 | 2004-06-03 | Süd-Chemie AG | LCST-Polymere |
US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US20040175942A1 (en) | 2003-01-03 | 2004-09-09 | Chang Song Y. | Composition and method used for chemical mechanical planarization of metals |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
TW200505975A (en) | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
KR100539983B1 (ko) | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
US7037351B2 (en) | 2003-07-09 | 2006-05-02 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
JP2005048125A (ja) * | 2003-07-31 | 2005-02-24 | Hitachi Chem Co Ltd | Cmp研磨剤、研磨方法及び半導体装置の製造方法 |
KR100574225B1 (ko) | 2003-10-10 | 2006-04-26 | 요업기술원 | 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법 |
DE10358092A1 (de) | 2003-12-10 | 2005-07-14 | Merck Patent Gmbh | Oberflächenmodifizierte Partikel |
KR100640600B1 (ko) | 2003-12-12 | 2006-11-01 | 삼성전자주식회사 | 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법 |
EP1566420A1 (en) * | 2004-01-23 | 2005-08-24 | JSR Corporation | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
JP4420391B2 (ja) | 2004-05-28 | 2010-02-24 | 三井金属鉱業株式会社 | セリウム系研摩材 |
JP2006019740A (ja) * | 2004-06-30 | 2006-01-19 | Dongjin Semichem Co Ltd | 化学的機械的研磨スラリー組成物 |
US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
US7026441B2 (en) | 2004-08-12 | 2006-04-11 | Intel Corporation | Thermoresponsive sensor comprising a polymer solution |
US20070218811A1 (en) | 2004-09-27 | 2007-09-20 | Hitachi Chemical Co., Ltd. | Cmp polishing slurry and method of polishing substrate |
US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
TW200632147A (ja) | 2004-11-12 | 2006-09-16 | ||
KR100674927B1 (ko) | 2004-12-09 | 2007-01-26 | 삼성전자주식회사 | Cmp용 슬러리 조성물 및 그 제조 방법과 이들을 이용한기판 연마 방법 |
KR20080011044A (ko) * | 2006-07-28 | 2008-01-31 | 주식회사 엘지화학 | 산화세륨 분말, 그 제조방법, 및 이를 포함하는cmp슬러리 |
JP4131270B2 (ja) | 2005-03-01 | 2008-08-13 | トヨタ自動車株式会社 | 車輌の制駆動力制御装置 |
US20060213780A1 (en) | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
US7476620B2 (en) * | 2005-03-25 | 2009-01-13 | Dupont Air Products Nanomaterials Llc | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
US20060216935A1 (en) | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
JP2006339594A (ja) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | 半導体用研磨剤 |
FR2889194A1 (fr) | 2005-07-27 | 2007-02-02 | Rhodia Chimie Sa | Copolymere a blocs comprenant un bloc lcst presentant une temperature inferieur critique de solubilite, formulations comprenant le copolymere et utilisation pour vectoriser un ingredient actif |
TW200714696A (en) | 2005-08-05 | 2007-04-16 | Advanced Tech Materials | High throughput chemical mechanical polishing composition for metal film planarization |
US20090130384A1 (en) | 2005-09-30 | 2009-05-21 | Toyama Prefecture | Chip Provided with film Having Hole Pattern with the Use of Thermoresponsive Polymer and Method of Producing the Same |
US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
SG173357A1 (en) | 2005-11-11 | 2011-08-29 | Hitachi Chemical Co Ltd | Polishing slurry for silicon oxide, additive liquid and polishing method |
WO2007072890A1 (en) * | 2005-12-22 | 2007-06-28 | Asahi Glass Co., Ltd. | Glass substrate for mask blank and method of polishing for producing the same |
CN101374922B (zh) | 2006-01-25 | 2013-06-12 | Lg化学株式会社 | 用于抛光半导体晶片的cmp浆料及使用该浆料的方法 |
CN101584028A (zh) * | 2006-04-26 | 2009-11-18 | Nxp股份有限公司 | 制造半导体器件的方法、由此获得的半导体器件和适合该方法中使用的浆料 |
CN101495592A (zh) * | 2006-07-28 | 2009-07-29 | Lg化学株式会社 | 二氧化铈粉末、制备该粉末的方法以及包含该粉末的cmp浆料 |
KR100829594B1 (ko) | 2006-10-10 | 2008-05-14 | 삼성전자주식회사 | 화학 기계적 연마용 슬러리 조성물 및 이를 이용한 반도체메모리 소자의 제조 방법 |
US9120952B2 (en) | 2006-10-27 | 2015-09-01 | University Of South Florida | Polymeric microgels for chemical mechanical planarization (CMP) processing |
JP2008192930A (ja) * | 2007-02-06 | 2008-08-21 | Fujifilm Corp | 金属研磨用組成物及びそれを用いた化学的機械的研磨方法 |
US20090031636A1 (en) * | 2007-08-03 | 2009-02-05 | Qianqiu Ye | Polymeric barrier removal polishing slurry |
JP5140469B2 (ja) * | 2007-09-12 | 2013-02-06 | 富士フイルム株式会社 | 金属用研磨液、及び化学的機械的研磨方法 |
US8506359B2 (en) | 2008-02-06 | 2013-08-13 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method |
JP5375025B2 (ja) * | 2008-02-27 | 2013-12-25 | 日立化成株式会社 | 研磨液 |
KR101202720B1 (ko) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법 |
JP2010028086A (ja) * | 2008-06-16 | 2010-02-04 | Hitachi Chem Co Ltd | Cmp研磨剤、このcmp研磨剤を用いた研磨方法 |
JP2010087457A (ja) * | 2008-09-05 | 2010-04-15 | Hitachi Chem Co Ltd | Cmp研磨剤及びこれを用いた研磨方法 |
TW201038690A (en) * | 2008-09-26 | 2010-11-01 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
KR101084676B1 (ko) | 2008-12-03 | 2011-11-22 | 주식회사 엘지화학 | 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법 |
JP2010171064A (ja) * | 2009-01-20 | 2010-08-05 | Panasonic Corp | 半導体装置及びその製造方法 |
US20130171824A1 (en) * | 2010-09-08 | 2013-07-04 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
-
2011
- 2011-09-06 WO PCT/IB2011/053896 patent/WO2012032469A1/en active Application Filing
- 2011-09-06 KR KR1020137009004A patent/KR101907863B1/ko active IP Right Grant
- 2011-09-06 CN CN201180053056.8A patent/CN103189457B/zh not_active Expired - Fee Related
- 2011-09-06 SG SG10201506220PA patent/SG10201506220PA/en unknown
- 2011-09-06 JP JP2013527720A patent/JP6196155B2/ja not_active Expired - Fee Related
- 2011-09-06 US US13/821,757 patent/US20130161285A1/en not_active Abandoned
- 2011-09-06 MY MYPI2013000780A patent/MY164859A/en unknown
- 2011-09-06 RU RU2013115235/05A patent/RU2577281C2/ru not_active IP Right Cessation
- 2011-09-06 TW TW100132006A patent/TWI538989B/zh not_active IP Right Cessation
- 2011-09-06 EP EP11823142.2A patent/EP2614123B1/en not_active Not-in-force
- 2011-09-06 SG SG2013017264A patent/SG188460A1/en unknown
-
2013
- 2013-03-07 IL IL225085A patent/IL225085A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
RU2013115235A (ru) | 2014-10-20 |
RU2577281C2 (ru) | 2016-03-10 |
EP2614123A4 (en) | 2014-07-30 |
EP2614123A1 (en) | 2013-07-17 |
US20130161285A1 (en) | 2013-06-27 |
EP2614123B1 (en) | 2017-06-28 |
IL225085A (en) | 2017-09-28 |
SG188460A1 (en) | 2013-04-30 |
TWI538989B (zh) | 2016-06-21 |
JP2013540851A (ja) | 2013-11-07 |
WO2012032469A1 (en) | 2012-03-15 |
JP6196155B2 (ja) | 2017-09-13 |
TW201211223A (en) | 2012-03-16 |
CN103189457B (zh) | 2015-12-09 |
KR101907863B1 (ko) | 2018-10-15 |
MY164859A (en) | 2018-01-30 |
KR20130133177A (ko) | 2013-12-06 |
CN103189457A (zh) | 2013-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201506220PA (en) | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices | |
IL224615B (en) | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices | |
EP2599583A4 (en) | Substrate processing method | |
EP2599582A4 (en) | Substrate processing method | |
GB2481187B (en) | Processing substrates | |
TWI562222B (en) | Substrate treatment apparatus | |
SG2014009203A (en) | Substrate processing apparatus | |
EP2652776A4 (en) | Wafer inspection | |
EP2551245A4 (en) | GLASS SUPPLY METHOD AND GLASS SUPPLY | |
EP2602823A4 (en) | Semiconductor device and process for production thereof | |
SG10201401901WA (en) | Glass for substrate, and glass substrate | |
EP2530721A4 (en) | Semiconductor device | |
EP2505562A4 (en) | METHOD FOR MANUFACTURING GLASS SUBSTRATE AND STIRRING DEVICE | |
EP2401912A4 (en) | Destructive insect-controlling device | |
EP2474964A4 (en) | EQUIPMENT SUBSTRATE | |
EP2565922A4 (en) | Semiconductor device | |
EP2571050A4 (en) | Semiconductor device | |
GB201016748D0 (en) | Reflective substrate | |
EP2596152A4 (en) | Surface treatment | |
EP2784808B8 (en) | Electrical component resin, semiconductor device, and substrate | |
EP2601742A4 (en) | Hardened programmable devices | |
EP2779216A4 (en) | POLISHING COMPOSITION AND POLISHING METHOD THEREFOR AND SUBSTRATE MANUFACTURING METHOD | |
EP2546870A4 (en) | Metal-bonded ceramic substrate | |
EP2587525A4 (en) | Method for manufacturing semiconductor device | |
HK1175059A1 (zh) | 基板處理裝置 |