SG10201405086RA - Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods - Google Patents

Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods

Info

Publication number
SG10201405086RA
SG10201405086RA SG10201405086RA SG10201405086RA SG10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA
Authority
SG
Singapore
Prior art keywords
thermal expansion
solid state
lighting devices
surface characteristics
associated methods
Prior art date
Application number
SG10201405086RA
Other languages
English (en)
Inventor
Ji-Soo Park
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG10201405086RA publication Critical patent/SG10201405086RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/1033—Gallium nitride [GaN]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
SG10201405086RA 2009-08-24 2010-08-24 Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods SG10201405086RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23630009P 2009-08-24 2009-08-24
US26106509P 2009-11-13 2009-11-13
US12/861,706 US8436362B2 (en) 2009-08-24 2010-08-23 Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods

Publications (1)

Publication Number Publication Date
SG10201405086RA true SG10201405086RA (en) 2014-10-30

Family

ID=43649898

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201405086RA SG10201405086RA (en) 2009-08-24 2010-08-24 Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
SG2012013405A SG178573A1 (en) 2009-08-24 2010-08-24 Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012013405A SG178573A1 (en) 2009-08-24 2010-08-24 Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods

Country Status (7)

Country Link
US (4) US8436362B2 (zh)
EP (1) EP2471112B1 (zh)
KR (3) KR101652153B1 (zh)
CN (1) CN102549779B (zh)
SG (2) SG10201405086RA (zh)
TW (2) TWI584492B (zh)
WO (1) WO2011028546A2 (zh)

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US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
US10290674B2 (en) 2016-04-22 2019-05-14 QROMIS, Inc. Engineered substrate including light emitting diode and power circuitry
US10074567B2 (en) * 2016-10-21 2018-09-11 QROMIS, Inc. Method and system for vertical integration of elemental and compound semiconductors
CN110023080A (zh) * 2016-11-28 2019-07-16 康宁股份有限公司 灯具覆盖和包含此类覆盖的灯具
WO2019028314A1 (en) 2017-08-03 2019-02-07 Cree, Inc. HIGH DENSITY PIXELIZED LED CHIPS AND NETWORK DEVICES AND METHODS OF MANUFACTURE
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
JP7064325B2 (ja) * 2017-12-18 2022-05-10 スタンレー電気株式会社 半導体発光装置、および、それを用いた半導体発光装置の製造方法
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
US11145689B2 (en) * 2018-11-29 2021-10-12 Creeled, Inc. Indicia for light emitting diode chips
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
WO2021087109A1 (en) 2019-10-29 2021-05-06 Cree, Inc. Texturing for high density pixelated-led chips
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods

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Also Published As

Publication number Publication date
EP2471112A4 (en) 2015-03-04
KR101374951B1 (ko) 2014-03-17
US20130062615A1 (en) 2013-03-14
US9166107B2 (en) 2015-10-20
US8729563B2 (en) 2014-05-20
US8436362B2 (en) 2013-05-07
KR20160105528A (ko) 2016-09-06
CN102549779B (zh) 2015-07-22
WO2011028546A2 (en) 2011-03-10
US20150008441A1 (en) 2015-01-08
US9806230B2 (en) 2017-10-31
CN102549779A (zh) 2012-07-04
TWI584492B (zh) 2017-05-21
EP2471112A2 (en) 2012-07-04
KR20130096330A (ko) 2013-08-29
SG178573A1 (en) 2012-03-29
TWI619265B (zh) 2018-03-21
TW201123531A (en) 2011-07-01
KR101652153B1 (ko) 2016-08-29
TW201711223A (zh) 2017-03-16
US20160049549A1 (en) 2016-02-18
US20110121310A1 (en) 2011-05-26
WO2011028546A3 (en) 2011-05-12
KR20120045055A (ko) 2012-05-08
EP2471112B1 (en) 2019-04-10

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