SG10201405086RA - Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods - Google Patents
Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methodsInfo
- Publication number
- SG10201405086RA SG10201405086RA SG10201405086RA SG10201405086RA SG10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA SG 10201405086R A SG10201405086R A SG 10201405086RA
- Authority
- SG
- Singapore
- Prior art keywords
- thermal expansion
- solid state
- lighting devices
- surface characteristics
- associated methods
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23630009P | 2009-08-24 | 2009-08-24 | |
US26106509P | 2009-11-13 | 2009-11-13 | |
US12/861,706 US8436362B2 (en) | 2009-08-24 | 2010-08-23 | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201405086RA true SG10201405086RA (en) | 2014-10-30 |
Family
ID=43649898
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012013405A SG178573A1 (en) | 2009-08-24 | 2010-08-24 | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods |
SG10201405086RA SG10201405086RA (en) | 2009-08-24 | 2010-08-24 | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012013405A SG178573A1 (en) | 2009-08-24 | 2010-08-24 | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods |
Country Status (7)
Country | Link |
---|---|
US (4) | US8436362B2 (en) |
EP (1) | EP2471112B1 (en) |
KR (3) | KR101374951B1 (en) |
CN (1) | CN102549779B (en) |
SG (2) | SG178573A1 (en) |
TW (2) | TWI584492B (en) |
WO (1) | WO2011028546A2 (en) |
Families Citing this family (18)
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TWI440210B (en) | 2007-01-22 | 2014-06-01 | Cree Inc | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same |
US8436362B2 (en) | 2009-08-24 | 2013-05-07 | Micron Technology, Inc. | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods |
JP2012015304A (en) * | 2010-06-30 | 2012-01-19 | Sumitomo Electric Ind Ltd | Semiconductor device |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
US10529696B2 (en) | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
US10290674B2 (en) | 2016-04-22 | 2019-05-14 | QROMIS, Inc. | Engineered substrate including light emitting diode and power circuitry |
US10074567B2 (en) * | 2016-10-21 | 2018-09-11 | QROMIS, Inc. | Method and system for vertical integration of elemental and compound semiconductors |
WO2018098462A1 (en) * | 2016-11-28 | 2018-05-31 | Corning Incorporated | Light fixture cover and light fixture comprising the same |
US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
TWI780195B (en) | 2017-08-03 | 2022-10-11 | 美商克里公司 | High density pixelated-led chips and chip array devices, and fabrication methods |
US10734303B2 (en) * | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
JP7064325B2 (en) * | 2017-12-18 | 2022-05-10 | スタンレー電気株式会社 | A semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device using the semiconductor light emitting device. |
US10529773B2 (en) | 2018-02-14 | 2020-01-07 | Cree, Inc. | Solid state lighting devices with opposing emission directions |
US11145689B2 (en) * | 2018-11-29 | 2021-10-12 | Creeled, Inc. | Indicia for light emitting diode chips |
US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
US11817526B2 (en) | 2019-10-29 | 2023-11-14 | Creeled, Inc. | Texturing for high density pixelated-LED chips and chip array devices |
US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
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JPH0220077A (en) | 1988-07-08 | 1990-01-23 | Toshiba Corp | Manufacture of green-light emitting diode |
JP2914246B2 (en) | 1995-10-12 | 1999-06-28 | 昭和電工株式会社 | Epitaxial wafer and semiconductor light emitting device |
US6348096B1 (en) | 1997-03-13 | 2002-02-19 | Nec Corporation | Method for manufacturing group III-V compound semiconductors |
DE10032246A1 (en) * | 2000-07-03 | 2002-01-17 | Osram Opto Semiconductors Gmbh | Luminescence diode chip based on InGaN and method for its production |
JP2003298109A (en) | 2002-04-02 | 2003-10-17 | Sanyo Electric Co Ltd | Semiconductor element and method of manufacturing the same |
WO2006015185A2 (en) * | 2004-07-30 | 2006-02-09 | Aonex Technologies, Inc. | GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER |
US7846759B2 (en) * | 2004-10-21 | 2010-12-07 | Aonex Technologies, Inc. | Multi-junction solar cells and methods of making same using layer transfer and bonding techniques |
US10374120B2 (en) * | 2005-02-18 | 2019-08-06 | Koninklijke Philips N.V. | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
TW200707799A (en) * | 2005-04-21 | 2007-02-16 | Aonex Technologies Inc | Bonded intermediate substrate and method of making same |
EP1755172A1 (en) | 2005-08-17 | 2007-02-21 | Ngk Insulators, Ltd. | Semiconductor layered structure and its method of formation, and light emitting device |
WO2007084782A2 (en) | 2006-01-20 | 2007-07-26 | The Regents Of The University Of California | Method for improved growth of semipolar (al,in,ga,b)n |
US20070243703A1 (en) * | 2006-04-14 | 2007-10-18 | Aonex Technololgies, Inc. | Processes and structures for epitaxial growth on laminate substrates |
RU2326993C2 (en) * | 2006-07-25 | 2008-06-20 | Самсунг Электро-Меканикс Ко., Лтд. | Method of nitride monocrystal growth on silicon plate, nitride semi-conductor light emitting diode, which is produced with its utilisation, and method of such production |
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US20080121903A1 (en) * | 2006-11-24 | 2008-05-29 | Sony Corporation | Method for manufacturing light-emitting diode, light-emitting diode, lightsource cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, and electronic apparatus |
KR100878418B1 (en) | 2006-11-27 | 2009-01-13 | 삼성전기주식회사 | Vertical nitride semiconductor light emitting device and manufacturing method of the same |
US20080224268A1 (en) * | 2007-03-13 | 2008-09-18 | Covalent Materials Corporation | Nitride semiconductor single crystal substrate |
JP4907476B2 (en) | 2007-03-13 | 2012-03-28 | コバレントマテリアル株式会社 | Nitride semiconductor single crystal |
US7964888B2 (en) * | 2007-04-18 | 2011-06-21 | Cree, Inc. | Semiconductor light emitting device packages and methods |
US7732301B1 (en) * | 2007-04-20 | 2010-06-08 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
US20090085055A1 (en) | 2007-09-27 | 2009-04-02 | Hui Peng | Method for Growing an Epitaxial Layer |
US9086213B2 (en) * | 2007-10-17 | 2015-07-21 | Xicato, Inc. | Illumination device with light emitting diodes |
JP2009135448A (en) * | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor substrate, and method for manufacturing semiconductor device |
CN101471402A (en) | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for preparing graphical substrate of GaN-based LED by silicon 001 crystal face |
KR20100107054A (en) * | 2008-02-01 | 2010-10-04 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut |
JP2010040692A (en) * | 2008-08-04 | 2010-02-18 | Furukawa Electric Co Ltd:The | Nitride based semiconductor device and method of manufacturing the same |
US8436362B2 (en) | 2009-08-24 | 2013-05-07 | Micron Technology, Inc. | Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods |
-
2010
- 2010-08-23 US US12/861,706 patent/US8436362B2/en active Active
- 2010-08-24 KR KR1020127007186A patent/KR101374951B1/en active IP Right Grant
- 2010-08-24 WO PCT/US2010/046535 patent/WO2011028546A2/en active Application Filing
- 2010-08-24 KR KR1020167022930A patent/KR20160105528A/en active Search and Examination
- 2010-08-24 KR KR1020137020824A patent/KR101652153B1/en active IP Right Grant
- 2010-08-24 SG SG2012013405A patent/SG178573A1/en unknown
- 2010-08-24 TW TW099128380A patent/TWI584492B/en active
- 2010-08-24 SG SG10201405086RA patent/SG10201405086RA/en unknown
- 2010-08-24 EP EP10814258.9A patent/EP2471112B1/en active Active
- 2010-08-24 CN CN201080043169.5A patent/CN102549779B/en active Active
- 2010-08-24 TW TW105138756A patent/TWI619265B/en active
-
2012
- 2012-09-14 US US13/617,846 patent/US8729563B2/en active Active
-
2014
- 2014-05-20 US US14/282,406 patent/US9166107B2/en active Active
-
2015
- 2015-10-19 US US14/887,194 patent/US9806230B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102549779B (en) | 2015-07-22 |
US20150008441A1 (en) | 2015-01-08 |
EP2471112B1 (en) | 2019-04-10 |
WO2011028546A2 (en) | 2011-03-10 |
US20130062615A1 (en) | 2013-03-14 |
US20110121310A1 (en) | 2011-05-26 |
TWI584492B (en) | 2017-05-21 |
US8436362B2 (en) | 2013-05-07 |
KR101652153B1 (en) | 2016-08-29 |
KR101374951B1 (en) | 2014-03-17 |
EP2471112A4 (en) | 2015-03-04 |
SG178573A1 (en) | 2012-03-29 |
TW201123531A (en) | 2011-07-01 |
TW201711223A (en) | 2017-03-16 |
EP2471112A2 (en) | 2012-07-04 |
CN102549779A (en) | 2012-07-04 |
KR20160105528A (en) | 2016-09-06 |
KR20120045055A (en) | 2012-05-08 |
KR20130096330A (en) | 2013-08-29 |
US9806230B2 (en) | 2017-10-31 |
US20160049549A1 (en) | 2016-02-18 |
US9166107B2 (en) | 2015-10-20 |
US8729563B2 (en) | 2014-05-20 |
TWI619265B (en) | 2018-03-21 |
WO2011028546A3 (en) | 2011-05-12 |
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