SE9602407D0 - A method for producing a channel region layer in a voltage controlled semiconductor device - Google Patents
A method for producing a channel region layer in a voltage controlled semiconductor deviceInfo
- Publication number
- SE9602407D0 SE9602407D0 SE9602407A SE9602407A SE9602407D0 SE 9602407 D0 SE9602407 D0 SE 9602407D0 SE 9602407 A SE9602407 A SE 9602407A SE 9602407 A SE9602407 A SE 9602407A SE 9602407 D0 SE9602407 D0 SE 9602407D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- channel region
- producing
- semiconductor device
- controlled semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 238000002513 implantation Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602407A SE9602407D0 (sv) | 1996-06-19 | 1996-06-19 | A method for producing a channel region layer in a voltage controlled semiconductor device |
| US08/678,548 US5786251A (en) | 1996-06-19 | 1996-07-09 | Method for producing a channel region layer in a voltage controlled semiconductor device |
| PCT/SE1997/001088 WO1997049124A1 (en) | 1996-06-19 | 1997-06-18 | A method for producing a channel region layer in a voltage controlled semiconductor device |
| EP97928614A EP0958601A1 (en) | 1996-06-19 | 1997-06-18 | A method for producing a channel region layer in a voltage controlled semiconductor device |
| JP10502817A JP2000512808A (ja) | 1996-06-19 | 1997-06-18 | 電圧制御型半導体装置にチャンネル領域層を作るための方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602407A SE9602407D0 (sv) | 1996-06-19 | 1996-06-19 | A method for producing a channel region layer in a voltage controlled semiconductor device |
| US08/678,548 US5786251A (en) | 1996-06-19 | 1996-07-09 | Method for producing a channel region layer in a voltage controlled semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9602407D0 true SE9602407D0 (sv) | 1996-06-19 |
Family
ID=26662680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9602407A SE9602407D0 (sv) | 1996-06-19 | 1996-06-19 | A method for producing a channel region layer in a voltage controlled semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5786251A (sv) |
| SE (1) | SE9602407D0 (sv) |
| WO (1) | WO1997049124A1 (sv) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8133789B1 (en) * | 2003-04-11 | 2012-03-13 | Purdue Research Foundation | Short-channel silicon carbide power mosfet |
| JP4786621B2 (ja) * | 2007-09-20 | 2011-10-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US8035112B1 (en) | 2008-04-23 | 2011-10-11 | Purdue Research Foundation | SIC power DMOSFET with self-aligned source contact |
| US8993424B2 (en) * | 2011-11-03 | 2015-03-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a semiconductor transistor device with optimized dopant profile |
| US9660049B2 (en) | 2011-11-03 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor transistor device with dopant profile |
| JP5597217B2 (ja) * | 2012-02-29 | 2014-10-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US8933528B2 (en) * | 2013-03-11 | 2015-01-13 | International Business Machines Corporation | Semiconductor fin isolation by a well trapping fin portion |
| US11222782B2 (en) * | 2020-01-17 | 2022-01-11 | Microchip Technology Inc. | Self-aligned implants for silicon carbide (SiC) technologies and fabrication method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59188974A (ja) * | 1983-04-11 | 1984-10-26 | Nec Corp | 半導体装置の製造方法 |
| JP2615390B2 (ja) * | 1985-10-07 | 1997-05-28 | 工業技術院長 | 炭化シリコン電界効果トランジスタの製造方法 |
| JP2913785B2 (ja) * | 1990-07-12 | 1999-06-28 | 富士通株式会社 | 半導体装置の製造方法 |
| US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
| JP3146694B2 (ja) * | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法 |
| JPH0799312A (ja) * | 1993-02-22 | 1995-04-11 | Texas Instr Inc <Ti> | 半導体装置とその製法 |
| US5510281A (en) * | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
-
1996
- 1996-06-19 SE SE9602407A patent/SE9602407D0/sv unknown
- 1996-07-09 US US08/678,548 patent/US5786251A/en not_active Expired - Lifetime
-
1997
- 1997-06-18 WO PCT/SE1997/001088 patent/WO1997049124A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1997049124A1 (en) | 1997-12-24 |
| US5786251A (en) | 1998-07-28 |
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