SE8504431D0 - Integrerad krets med dislokationsfritt substrat - Google Patents

Integrerad krets med dislokationsfritt substrat

Info

Publication number
SE8504431D0
SE8504431D0 SE8504431A SE8504431A SE8504431D0 SE 8504431 D0 SE8504431 D0 SE 8504431D0 SE 8504431 A SE8504431 A SE 8504431A SE 8504431 A SE8504431 A SE 8504431A SE 8504431 D0 SE8504431 D0 SE 8504431D0
Authority
SE
Sweden
Prior art keywords
atoms
host
alloyed
integrated circuit
dislocation
Prior art date
Application number
SE8504431A
Other languages
English (en)
Other versions
SE8504431L (sv
Inventor
A Sher
Original Assignee
Stanford Res Inst Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanford Res Inst Int filed Critical Stanford Res Inst Int
Publication of SE8504431L publication Critical patent/SE8504431L/sv
Publication of SE8504431D0 publication Critical patent/SE8504431D0/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/826—Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/862—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO being Group II-VI materials comprising three or more elements, e.g. CdZnTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
SE8504431A 1984-02-02 1985-09-25 Integrerad krets med dislokationsfritt substrat SE8504431D0 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/576,728 US4697202A (en) 1984-02-02 1984-02-02 Integrated circuit having dislocation free substrate

Publications (2)

Publication Number Publication Date
SE8504431L SE8504431L (sv) 1985-09-25
SE8504431D0 true SE8504431D0 (sv) 1985-09-25

Family

ID=24305733

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8504431A SE8504431D0 (sv) 1984-02-02 1985-09-25 Integrerad krets med dislokationsfritt substrat

Country Status (9)

Country Link
US (1) US4697202A (sv)
EP (1) EP0172176A1 (sv)
JP (1) JPS61501234A (sv)
CA (1) CA1237826A (sv)
DE (1) DE3590003T1 (sv)
GB (4) GB2163003B (sv)
NL (1) NL8520001A (sv)
SE (1) SE8504431D0 (sv)
WO (1) WO1985003598A1 (sv)

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US4835583A (en) * 1985-08-30 1989-05-30 Hitachi, Ltd. Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate
US4769341A (en) * 1986-12-29 1988-09-06 American Telephone And Telegraph Company, At&T Bell Laboratories Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors
KR900001062B1 (ko) * 1987-09-15 1990-02-26 강진구 반도체 바이 씨 모오스 장치의 제조방법
US5300793A (en) * 1987-12-11 1994-04-05 Hitachi, Ltd. Hetero crystalline structure and semiconductor device using it
GB2215514A (en) * 1988-03-04 1989-09-20 Plessey Co Plc Terminating dislocations in semiconductor epitaxial layers
US4916088A (en) * 1988-04-29 1990-04-10 Sri International Method of making a low dislocation density semiconductor device
US5063166A (en) * 1988-04-29 1991-11-05 Sri International Method of forming a low dislocation density semiconductor device
US5068695A (en) * 1988-04-29 1991-11-26 Sri International Low dislocation density semiconductor device
GB8821116D0 (en) * 1988-09-08 1989-11-08 Barr & Stroud Ltd Infra-red transmitting optical components and optical coatings therefor
DE3901551A1 (de) * 1989-01-20 1990-07-26 Lohmann Therapie Syst Lts Superfizielles therapeutisches system mit einem gehalt an einem antineoplastischen wirkstoff, insbesondere 5-fluoruracil
DE68919408T2 (de) * 1989-01-13 1995-04-20 Toshiba Kawasaki Kk Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes.
US4992840A (en) * 1989-09-21 1991-02-12 Hewlett-Packard Company Carbon doping MOSFET substrate to suppress hit electron trapping
US5247201A (en) * 1990-02-15 1993-09-21 Siemens Aktiengesellschaft Input protection structure for integrated circuits
US5043773A (en) * 1990-06-04 1991-08-27 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates
US5190890A (en) * 1990-06-04 1993-03-02 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same
US5173751A (en) * 1991-01-21 1992-12-22 Pioneer Electronic Corporation Semiconductor light emitting device
KR940009357B1 (ko) * 1991-04-09 1994-10-07 삼성전자주식회사 반도체 장치 및 그 제조방법
AU6097294A (en) * 1993-02-17 1994-09-14 Ameritech Services, Inc. Universal tv interface and related method
US6043548A (en) * 1993-04-14 2000-03-28 Yeda Research And Development Co., Ltd. Semiconductor device with stabilized junction
DE19640003B4 (de) 1996-09-27 2005-07-07 Siemens Ag Halbleitervorrichtung und Verfahren zu dessen Herstellung
US5998235A (en) * 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
US6780735B2 (en) * 2001-04-30 2004-08-24 International Business Machines Corporation Method to increase carbon and boron doping concentrations in Si and SiGe films
US8343825B2 (en) 2011-01-19 2013-01-01 International Business Machines Corporation Reducing dislocation formation in semiconductor devices through targeted carbon implantation
CN110359218A (zh) * 2018-04-10 2019-10-22 青岛海尔洗衣机有限公司 一种定频洗衣机的脱水时间的控制方法及定频洗衣机

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US3147412A (en) * 1960-10-27 1964-09-01 Monsanto Co Junction rectifier of boron phosphide having boron-to-phosphorus atomic ratio of 6 to 100
US3261726A (en) * 1961-10-09 1966-07-19 Monsanto Co Production of epitaxial films
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Also Published As

Publication number Publication date
GB2200251A (en) 1988-07-27
US4697202A (en) 1987-09-29
SE8504431L (sv) 1985-09-25
GB8804297D0 (en) 1988-03-23
GB8521397D0 (en) 1985-10-02
GB2200250A (en) 1988-07-27
GB2200249A (en) 1988-07-27
DE3590003T1 (de) 1985-11-28
GB8804296D0 (en) 1988-03-23
GB8804298D0 (en) 1988-03-23
NL8520001A (nl) 1986-01-02
GB2163003A (en) 1986-02-12
EP0172176A1 (en) 1986-02-26
GB2200250B (en) 1989-01-05
JPS61501234A (ja) 1986-06-19
WO1985003598A1 (en) 1985-08-15
GB2200249B (en) 1989-01-05
GB2163003B (en) 1989-01-11
GB2200251B (en) 1989-01-05
CA1237826A (en) 1988-06-07

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Effective date: 19890524