GB1123371A - Improvements in or relating to crystalline materials - Google Patents

Improvements in or relating to crystalline materials

Info

Publication number
GB1123371A
GB1123371A GB89965A GB89965A GB1123371A GB 1123371 A GB1123371 A GB 1123371A GB 89965 A GB89965 A GB 89965A GB 89965 A GB89965 A GB 89965A GB 1123371 A GB1123371 A GB 1123371A
Authority
GB
United Kingdom
Prior art keywords
relating
crystalline materials
dislocations
germanium
proportions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB89965A
Inventor
William Bardsley
Stanley Nielson
George Joseph Rich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MINI OF TECHNOLOGY
Minister of Technology
Original Assignee
MINI OF TECHNOLOGY
Minister of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MINI OF TECHNOLOGY, Minister of Technology filed Critical MINI OF TECHNOLOGY
Priority to GB89965A priority Critical patent/GB1123371A/en
Publication of GB1123371A publication Critical patent/GB1123371A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A single crystal suitable for a laser is made of silicon doped with boron and germanium in proportions, determined empirically, such that the crystalline structure is substantially free from dislocations.
GB89965A 1965-02-08 1965-02-08 Improvements in or relating to crystalline materials Expired GB1123371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB89965A GB1123371A (en) 1965-02-08 1965-02-08 Improvements in or relating to crystalline materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB89965A GB1123371A (en) 1965-02-08 1965-02-08 Improvements in or relating to crystalline materials

Publications (1)

Publication Number Publication Date
GB1123371A true GB1123371A (en) 1968-08-14

Family

ID=9712438

Family Applications (1)

Application Number Title Priority Date Filing Date
GB89965A Expired GB1123371A (en) 1965-02-08 1965-02-08 Improvements in or relating to crystalline materials

Country Status (1)

Country Link
GB (1) GB1123371A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200249A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2200249A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate
GB2200251A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate
GB2200250A (en) * 1984-02-02 1988-07-27 Stanford Res Inst Int Semiconductor circuit structure having dislocation-free substrate

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