GB1008055A - Semiconductive materials - Google Patents

Semiconductive materials

Info

Publication number
GB1008055A
GB1008055A GB1637764A GB1637764A GB1008055A GB 1008055 A GB1008055 A GB 1008055A GB 1637764 A GB1637764 A GB 1637764A GB 1637764 A GB1637764 A GB 1637764A GB 1008055 A GB1008055 A GB 1008055A
Authority
GB
United Kingdom
Prior art keywords
semi
doped
rod
conductor material
semiconductive materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1637764A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of GB1008055A publication Critical patent/GB1008055A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials

Abstract

A rod of semi-conductor material of large diameter and containing a predetermined amount of a dopant is formed by zone-melting two rods of semi-conductor material, one of which is doped, the two bodies being placed side by side. The doped rod may be of smaller diameter and may be placed in a longitudinal slot in the other rod. A monocrystal may be formed using a monocrystalline seed. The semi-conductor material may be silicon or germanium. Silicon may be doped with phosphorus.
GB1637764A 1963-05-13 1964-04-20 Semiconductive materials Expired GB1008055A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28014363A 1963-05-13 1963-05-13

Publications (1)

Publication Number Publication Date
GB1008055A true GB1008055A (en) 1965-10-22

Family

ID=23071865

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1637764A Expired GB1008055A (en) 1963-05-13 1964-04-20 Semiconductive materials

Country Status (1)

Country Link
GB (1) GB1008055A (en)

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