FR1370724A - Process for producing thin monocrystalline films - Google Patents

Process for producing thin monocrystalline films

Info

Publication number
FR1370724A
FR1370724A FR941415A FR941415A FR1370724A FR 1370724 A FR1370724 A FR 1370724A FR 941415 A FR941415 A FR 941415A FR 941415 A FR941415 A FR 941415A FR 1370724 A FR1370724 A FR 1370724A
Authority
FR
France
Prior art keywords
producing thin
thin monocrystalline
monocrystalline films
films
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR941415A
Other languages
French (fr)
Inventor
Bertrand Alain Dreyfus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe dElectronique et dAutomatisme SA
Original Assignee
Societe dElectronique et dAutomatisme SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe dElectronique et dAutomatisme SA filed Critical Societe dElectronique et dAutomatisme SA
Priority to FR941415A priority Critical patent/FR1370724A/en
Priority to US381264A priority patent/US3385737A/en
Priority to GB28745/64A priority patent/GB1070066A/en
Priority to DE19641544251 priority patent/DE1544251A1/en
Application granted granted Critical
Publication of FR1370724A publication Critical patent/FR1370724A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR941415A 1963-07-15 1963-07-15 Process for producing thin monocrystalline films Expired FR1370724A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR941415A FR1370724A (en) 1963-07-15 1963-07-15 Process for producing thin monocrystalline films
US381264A US3385737A (en) 1963-07-15 1964-07-08 Manufacturing thin monocrystalline layers
GB28745/64A GB1070066A (en) 1963-07-15 1964-07-13 Improvements in and relating to production of monocrystalline layers
DE19641544251 DE1544251A1 (en) 1963-07-15 1964-07-14 Process for the production of thin, single-crystalline layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR941415A FR1370724A (en) 1963-07-15 1963-07-15 Process for producing thin monocrystalline films

Publications (1)

Publication Number Publication Date
FR1370724A true FR1370724A (en) 1964-08-28

Family

ID=8808283

Family Applications (1)

Application Number Title Priority Date Filing Date
FR941415A Expired FR1370724A (en) 1963-07-15 1963-07-15 Process for producing thin monocrystalline films

Country Status (4)

Country Link
US (1) US3385737A (en)
DE (1) DE1544251A1 (en)
FR (1) FR1370724A (en)
GB (1) GB1070066A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1474973A (en) * 1966-02-16 1967-03-31 Radiotechnique Coprim Rtc Method of manufacturing a contact layer for semiconductor devices and products obtained
US3514320A (en) * 1969-02-10 1970-05-26 William H Vaughan Method of forming single crystal films by nonepitaxial growth

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3128854A (en) * 1964-04-14 Hand luggage
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
BE548791A (en) * 1955-06-20
FR1141561A (en) * 1956-01-20 1957-09-04 Cedel Method and means for the manufacture of semiconductor materials
US2994621A (en) * 1956-03-29 1961-08-01 Baldwin Piano Co Semi-conductive films and methods of producing them
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3012902A (en) * 1959-12-08 1961-12-12 Owens Illinois Glass Co Process of reacting a vaporous metal with a glass surface
NL270516A (en) * 1960-11-30
NL270518A (en) * 1960-11-30
NL286877A (en) * 1961-12-26

Also Published As

Publication number Publication date
US3385737A (en) 1968-05-28
DE1544251A1 (en) 1970-03-12
GB1070066A (en) 1967-05-24

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