SE8301364L - Sett och apparat for framstellning av amorfa fotovoltiska celler - Google Patents

Sett och apparat for framstellning av amorfa fotovoltiska celler

Info

Publication number
SE8301364L
SE8301364L SE8301364A SE8301364A SE8301364L SE 8301364 L SE8301364 L SE 8301364L SE 8301364 A SE8301364 A SE 8301364A SE 8301364 A SE8301364 A SE 8301364A SE 8301364 L SE8301364 L SE 8301364L
Authority
SE
Sweden
Prior art keywords
chamber
triad
chambers
layer
substrate
Prior art date
Application number
SE8301364A
Other languages
English (en)
Swedish (sv)
Other versions
SE8301364D0 (sv
Inventor
M Izu
H C Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/359,825 external-priority patent/US4492181A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of SE8301364D0 publication Critical patent/SE8301364D0/xx
Publication of SE8301364L publication Critical patent/SE8301364L/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/90Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
    • Y02A40/963Off-grid food refrigeration
    • Y02A40/966Powered by renewable energy sources
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
SE8301364A 1982-03-19 1983-03-14 Sett och apparat for framstellning av amorfa fotovoltiska celler SE8301364L (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/359,825 US4492181A (en) 1982-03-19 1982-03-19 Apparatus for continuously producing tandem amorphous photovoltaic cells
US06/460,629 US4485125A (en) 1982-03-19 1983-01-24 Method for continuously producing tandem amorphous photovoltaic cells

Publications (2)

Publication Number Publication Date
SE8301364D0 SE8301364D0 (sv) 1983-03-14
SE8301364L true SE8301364L (sv) 1983-09-20

Family

ID=27000645

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8301364A SE8301364L (sv) 1982-03-19 1983-03-14 Sett och apparat for framstellning av amorfa fotovoltiska celler

Country Status (19)

Country Link
US (1) US4485125A (es)
KR (1) KR840004311A (es)
AU (1) AU1241483A (es)
BR (1) BR8301264A (es)
CA (1) CA1188398A (es)
DE (1) DE3309079A1 (es)
EG (1) EG15199A (es)
ES (1) ES8403247A1 (es)
FR (1) FR2542137A1 (es)
GB (1) GB2117800B (es)
GR (1) GR82635B (es)
IE (1) IE54229B1 (es)
IL (1) IL68248A (es)
IN (1) IN157932B (es)
IT (1) IT1160801B (es)
MX (1) MX153415A (es)
NL (1) NL8300941A (es)
PH (1) PH19696A (es)
SE (1) SE8301364L (es)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
US5258075A (en) * 1983-06-30 1993-11-02 Canon Kabushiki Kaisha Process for producing photoconductive member and apparatus for producing the same
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
JPS6179755A (ja) * 1984-09-28 1986-04-23 Nisshin Steel Co Ltd 溶融めつき真空蒸着めつき兼用の連続めつき装置
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4784874A (en) * 1985-02-20 1988-11-15 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
JP2537175B2 (ja) * 1985-03-27 1996-09-25 キヤノン株式会社 機能性堆積膜の製造装置
US4664951A (en) * 1985-07-31 1987-05-12 Energy Conversion Devices, Inc. Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
JPH0647727B2 (ja) * 1985-12-24 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
JPS62271418A (ja) * 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
US4763601A (en) * 1987-09-02 1988-08-16 Nippon Steel Corporation Continuous composite coating apparatus for coating strip
US4842892A (en) * 1987-09-29 1989-06-27 Xerox Corporation Method for depositing an n+ amorphous silicon layer onto contaminated substrate
IT1227877B (it) * 1988-11-25 1991-05-14 Eniricerche S P A Agip S P A Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile
JPH0340447A (ja) * 1989-07-07 1991-02-21 Sankyo Seiki Mfg Co Ltd リール制御方法
US5176758A (en) * 1991-05-20 1993-01-05 United Solar Systems Corporation Translucent photovoltaic sheet material and panels
US5246506A (en) * 1991-07-16 1993-09-21 Solarex Corporation Multijunction photovoltaic device and fabrication method
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
US5946587A (en) * 1992-08-06 1999-08-31 Canon Kabushiki Kaisha Continuous forming method for functional deposited films
DE4313284A1 (de) * 1993-04-23 1994-10-27 Leybold Ag Spaltschleuse für das Ein- oder Ausbringen von Substraten von der einen in eine benachbarte Behandlungskammer
US5333771A (en) * 1993-07-19 1994-08-02 Advance Systems, Inc. Web threader having an endless belt formed from a thin metal strip
DE9407482U1 (de) * 1994-05-05 1994-10-06 Balzers und Leybold Deutschland Holding AG, 63450 Hanau Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken
US5563095A (en) * 1994-12-01 1996-10-08 Frey; Jeffrey Method for manufacturing semiconductor devices
US6273955B1 (en) 1995-08-28 2001-08-14 Canon Kabushiki Kaisha Film forming apparatus
JP3332700B2 (ja) 1995-12-22 2002-10-07 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
WO1997049132A1 (en) * 1996-06-20 1997-12-24 Jeffrey Frey Light-emitting semiconductor device
US6362020B1 (en) 1998-01-30 2002-03-26 Canon Kabushiki Kaisha Process of forming deposited film, process of producing semiconductor element substrate, and process of producing photovoltaic element
JP2000077402A (ja) * 1998-09-02 2000-03-14 Tokyo Electron Ltd プラズマ処理方法および半導体装置
JP2000204478A (ja) 1998-11-11 2000-07-25 Canon Inc 基板処理装置及び基板処理方法
JP4387573B2 (ja) * 1999-10-26 2009-12-16 東京エレクトロン株式会社 プロセス排気ガスモニタ装置及び方法、半導体製造装置、及び半導体製造装置管理システム及び方法
JP2002080151A (ja) 2000-03-28 2002-03-19 Canon Inc ウェブ搬送装置及び搬送方法、並びに電析装置及び電析方法
JP2002020863A (ja) 2000-05-01 2002-01-23 Canon Inc 堆積膜の形成方法及び形成装置、及び基板処理方法
JP4562152B2 (ja) 2000-07-11 2010-10-13 キヤノン株式会社 基板処理方法
TW565812B (en) * 2000-07-21 2003-12-11 Ebauchesfabrik Eta Ag Display assembly including an electro-optical cell and a photovoltaic cell
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US20040040506A1 (en) * 2002-08-27 2004-03-04 Ovshinsky Herbert C. High throughput deposition apparatus
DE502004009821D1 (de) * 2004-04-13 2009-09-10 Applied Materials Gmbh & Co Kg Führungsanordnung mit mindestens einer Führungswalze für die Führung von Bändern in Bandbehandlungsanlagen
US7176543B2 (en) * 2005-01-26 2007-02-13 United Solar Ovonic Corp. Method of eliminating curl for devices on thin flexible substrates, and devices made thereby
EP1884981A1 (en) * 2006-08-03 2008-02-06 STMicroelectronics Ltd (Malta) Removable wafer expander for die bonding equipment.
US9103033B2 (en) * 2006-10-13 2015-08-11 Solopower Systems, Inc. Reel-to-reel reaction of precursor film to form solar cell absorber
JP4831061B2 (ja) * 2007-12-26 2011-12-07 パナソニック株式会社 電子部品実装用装置および電子部品実装用装置の非常停止方法
US20100028533A1 (en) * 2008-03-04 2010-02-04 Brent Bollman Methods and Devices for Processing a Precursor Layer in a Group VIA Environment
JP5275346B2 (ja) * 2008-06-24 2013-08-28 パナソニック株式会社 色素増感太陽電池
US8298339B2 (en) * 2008-08-04 2012-10-30 Xunlight Corporation Roll-to-roll continuous thin film PV manufacturing process and equipment with real time online IV measurement
US20100024729A1 (en) * 2008-08-04 2010-02-04 Xinmin Cao Methods and apparatuses for uniform plasma generation and uniform thin film deposition
JP5435267B2 (ja) * 2008-10-01 2014-03-05 日本電気硝子株式会社 ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法
JP5691148B2 (ja) 2008-10-01 2015-04-01 日本電気硝子株式会社 ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法
JP5532506B2 (ja) * 2008-10-01 2014-06-25 日本電気硝子株式会社 ガラスロール
JP5532507B2 (ja) * 2008-10-01 2014-06-25 日本電気硝子株式会社 ガラスロール及びガラスロールの処理方法
US20110081487A1 (en) * 2009-03-04 2011-04-07 Brent Bollman Methods and devices for processing a precursor layer in a group via environment
US8247255B2 (en) * 2009-12-15 2012-08-21 PrimeStar, Inc. Modular system and process for continuous deposition of a thin film layer on a substrate
US8481355B2 (en) * 2009-12-15 2013-07-09 Primestar Solar, Inc. Modular system and process for continuous deposition of a thin film layer on a substrate
WO2011097012A1 (en) * 2010-02-03 2011-08-11 Xunlight Corporation An isolation chamber and method of using the isolation chamber to make solar cell material
CN102983216B (zh) * 2012-11-22 2015-11-25 深圳首创光伏有限公司 制造cigs薄膜太阳能电池的吸收层的反应装置及方法
WO2014176396A2 (en) * 2013-04-24 2014-10-30 Natcore Technology, Inc. Method for patterned doping of a semiconductor
DE102014105747B4 (de) * 2014-04-23 2024-02-22 Uwe Beier Modulare Vorrichtung zum Bearbeiten von flexiblen Substraten
DE102014113036A1 (de) * 2014-09-10 2015-08-20 Von Ardenne Gmbh Anordnung und Verfahren zur Beschichtung eines bandförmigen Substrats
KR102622868B1 (ko) 2016-11-28 2024-01-08 엘지디스플레이 주식회사 열충격이 방지된 롤투롤 제조장치
CN112334596B (zh) * 2018-06-14 2023-10-20 应用材料公司 用于导引柔性基板的滚轴装置、用于传送柔性基板的滚轴装置的用途、真空处理设备及处理柔性基板的方法
US20230407469A1 (en) * 2022-06-17 2023-12-21 Raytheon Technologies Corporation Continuous atmospheric pressure cvd tow coater process with in-situ air leak monitoring

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB724799A (en) * 1953-02-20 1955-02-23 Ohio Commw Eng Co Method and apparatus for continuously plating irregularly shaped objects
US2862705A (en) * 1956-08-13 1958-12-02 Time Inc Threading mechanism
US3083926A (en) * 1959-06-17 1963-04-02 Herr Equipment Corp Strip handling
ES378214A1 (es) * 1969-05-19 1973-01-01 Ibm Un sistema para tratar material, especialmente semiconduc- tor.
US4015558A (en) * 1972-12-04 1977-04-05 Optical Coating Laboratory, Inc. Vapor deposition apparatus
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4369730A (en) * 1981-03-16 1983-01-25 Energy Conversion Devices, Inc. Cathode for generating a plasma
US4438723A (en) * 1981-09-28 1984-03-27 Energy Conversion Devices, Inc. Multiple chamber deposition and isolation system and method
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device

Also Published As

Publication number Publication date
EG15199A (en) 1986-03-31
AU1241483A (en) 1983-10-20
GB8306966D0 (en) 1983-04-20
CA1188398A (en) 1985-06-04
GB2117800B (en) 1986-06-18
PH19696A (en) 1986-06-13
ES520583A0 (es) 1984-03-01
SE8301364D0 (sv) 1983-03-14
GB2117800A (en) 1983-10-19
GR82635B (es) 1985-02-07
IN157932B (es) 1986-07-26
NL8300941A (nl) 1983-10-17
BR8301264A (pt) 1983-11-22
IE54229B1 (en) 1989-07-19
DE3309079A1 (de) 1983-09-29
IT8320045A0 (it) 1983-03-11
IT1160801B (it) 1987-03-11
IT8320045A1 (it) 1984-09-11
IL68248A (en) 1986-08-31
MX153415A (es) 1986-10-07
KR840004311A (ko) 1984-10-10
US4485125A (en) 1984-11-27
FR2542137A1 (fr) 1984-09-07
IE830541L (en) 1983-09-19
ES8403247A1 (es) 1984-03-01

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