ES8403247A1 - Aparato de camaras multiples para producir de manera continua celulas voltaicas amorfas en tandem. - Google Patents
Aparato de camaras multiples para producir de manera continua celulas voltaicas amorfas en tandem.Info
- Publication number
- ES8403247A1 ES8403247A1 ES520583A ES520583A ES8403247A1 ES 8403247 A1 ES8403247 A1 ES 8403247A1 ES 520583 A ES520583 A ES 520583A ES 520583 A ES520583 A ES 520583A ES 8403247 A1 ES8403247 A1 ES 8403247A1
- Authority
- ES
- Spain
- Prior art keywords
- chamber
- triad
- chambers
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 6
- 230000008021 deposition Effects 0.000 abstract 5
- 239000002019 doping agent Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 3
- 239000012495 reaction gas Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000010924 continuous production Methods 0.000 abstract 1
- 238000012864 cross contamination Methods 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 238000010248 power generation Methods 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
- Y02A40/90—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
- Y02A40/963—Off-grid food refrigeration
- Y02A40/966—Powered by renewable energy sources
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Micro-Organisms Or Cultivation Processes Thereof (AREA)
Abstract
PROCEDIMIENTO Y APARATO PARA PRODUCIR DE FORMA CONTINUA CELULAS FOTOVOLTAICAS AMORFAS EN TANDEM.EL APARATO COMPRENDE: UNA TRIADA DE CAMARAS DE DEPOSICION (28, 30, 32, 34, 36, 38) PARA CADA UNIDAD DE TRES CAPAS DE LAS CELULAS EN TANDEM; UN DISPOSITIVO (60) PARA DESPLAZAR CONTINUAMENTE EL MATERIAL DEL SUBSTRATO DE TRAVES DE CADA TRIADA DE CAMARAS EN DEPOSICION; UN DISPOSITIVO PARA DEPOSITAR LAS SUCESIVAS CAPAS DE LAS UNIDADES; UN DISPOSITIVO ASOCIADO ACTIVAMENTE CON CADA CAMARA DE CADA TRIADA, PARA INTRODUCIR UNA MEZCLA GASEOSA DE REACCION PREDETERMINADA ENELLA; UN DISPOSITIVO (40) PARA IMPEDIR LA CONTAMINACION MUTUA DE LA MEZCLA GASEOSA CONTENIDA EN LA TERCERA CAMARA (32) DE CADA TRIADA CON LA MEZCLA GASEOSA CONTENIDA EN LA PRIMERA CAMARA (28); Y UN DISPOSITIVO (58D, 58E, 58H, 58I) PARA AISLAR LA MEZCLA GASEOSA CONTENIDA EN LA SEGUNDA CAMARA DE CADA TRIADA DE LAS MEZCLAS GASEOSAS CONTENIDAS EN LA PRIMERA Y TERCERA CAMARA.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/359,825 US4492181A (en) | 1982-03-19 | 1982-03-19 | Apparatus for continuously producing tandem amorphous photovoltaic cells |
US06/460,629 US4485125A (en) | 1982-03-19 | 1983-01-24 | Method for continuously producing tandem amorphous photovoltaic cells |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8403247A1 true ES8403247A1 (es) | 1984-03-01 |
ES520583A0 ES520583A0 (es) | 1984-03-01 |
Family
ID=27000645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES520583A Granted ES520583A0 (es) | 1982-03-19 | 1983-03-14 | Aparato de camaras multiples para producir de manera continua celulas voltaicas amorfas en tandem. |
Country Status (19)
Country | Link |
---|---|
US (1) | US4485125A (es) |
KR (1) | KR840004311A (es) |
AU (1) | AU1241483A (es) |
BR (1) | BR8301264A (es) |
CA (1) | CA1188398A (es) |
DE (1) | DE3309079A1 (es) |
EG (1) | EG15199A (es) |
ES (1) | ES520583A0 (es) |
FR (1) | FR2542137A1 (es) |
GB (1) | GB2117800B (es) |
GR (1) | GR82635B (es) |
IE (1) | IE54229B1 (es) |
IL (1) | IL68248A (es) |
IN (1) | IN157932B (es) |
IT (1) | IT1160801B (es) |
MX (1) | MX153415A (es) |
NL (1) | NL8300941A (es) |
PH (1) | PH19696A (es) |
SE (1) | SE8301364L (es) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60119784A (ja) * | 1983-12-01 | 1985-06-27 | Kanegafuchi Chem Ind Co Ltd | 絶縁金属基板の製法およびそれに用いる装置 |
US5258075A (en) * | 1983-06-30 | 1993-11-02 | Canon Kabushiki Kaisha | Process for producing photoconductive member and apparatus for producing the same |
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
JPS60170234A (ja) * | 1984-02-15 | 1985-09-03 | Semiconductor Energy Lab Co Ltd | 気相反応装置および気相反応被膜作製方法 |
DE3427057A1 (de) * | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
JPS6179755A (ja) * | 1984-09-28 | 1986-04-23 | Nisshin Steel Co Ltd | 溶融めつき真空蒸着めつき兼用の連続めつき装置 |
US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
US6113701A (en) * | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4784874A (en) * | 1985-02-20 | 1988-11-15 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
US4664951A (en) * | 1985-07-31 | 1987-05-12 | Energy Conversion Devices, Inc. | Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
JPH0647727B2 (ja) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
JPS62271418A (ja) * | 1986-05-20 | 1987-11-25 | Matsushita Electric Ind Co Ltd | 非晶質シリコン半導体素子の製造方法 |
US4763601A (en) * | 1987-09-02 | 1988-08-16 | Nippon Steel Corporation | Continuous composite coating apparatus for coating strip |
US4842892A (en) * | 1987-09-29 | 1989-06-27 | Xerox Corporation | Method for depositing an n+ amorphous silicon layer onto contaminated substrate |
IT1227877B (it) * | 1988-11-25 | 1991-05-14 | Eniricerche S P A Agip S P A | Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile |
JPH0340447A (ja) * | 1989-07-07 | 1991-02-21 | Sankyo Seiki Mfg Co Ltd | リール制御方法 |
US5176758A (en) * | 1991-05-20 | 1993-01-05 | United Solar Systems Corporation | Translucent photovoltaic sheet material and panels |
US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
US5946587A (en) * | 1992-08-06 | 1999-08-31 | Canon Kabushiki Kaisha | Continuous forming method for functional deposited films |
DE4313284A1 (de) * | 1993-04-23 | 1994-10-27 | Leybold Ag | Spaltschleuse für das Ein- oder Ausbringen von Substraten von der einen in eine benachbarte Behandlungskammer |
US5333771A (en) * | 1993-07-19 | 1994-08-02 | Advance Systems, Inc. | Web threader having an endless belt formed from a thin metal strip |
DE9407482U1 (de) * | 1994-05-05 | 1994-10-06 | Balzers und Leybold Deutschland Holding AG, 63450 Hanau | Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken |
US5563095A (en) * | 1994-12-01 | 1996-10-08 | Frey; Jeffrey | Method for manufacturing semiconductor devices |
US6273955B1 (en) | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
JP3332700B2 (ja) | 1995-12-22 | 2002-10-07 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
US5920078A (en) * | 1996-06-20 | 1999-07-06 | Frey; Jeffrey | Optoelectronic device using indirect-bandgap semiconductor material |
US6362020B1 (en) | 1998-01-30 | 2002-03-26 | Canon Kabushiki Kaisha | Process of forming deposited film, process of producing semiconductor element substrate, and process of producing photovoltaic element |
JP2000077402A (ja) * | 1998-09-02 | 2000-03-14 | Tokyo Electron Ltd | プラズマ処理方法および半導体装置 |
JP2000204478A (ja) * | 1998-11-11 | 2000-07-25 | Canon Inc | 基板処理装置及び基板処理方法 |
JP4387573B2 (ja) * | 1999-10-26 | 2009-12-16 | 東京エレクトロン株式会社 | プロセス排気ガスモニタ装置及び方法、半導体製造装置、及び半導体製造装置管理システム及び方法 |
JP2002080151A (ja) | 2000-03-28 | 2002-03-19 | Canon Inc | ウェブ搬送装置及び搬送方法、並びに電析装置及び電析方法 |
JP2002020863A (ja) | 2000-05-01 | 2002-01-23 | Canon Inc | 堆積膜の形成方法及び形成装置、及び基板処理方法 |
JP4562152B2 (ja) | 2000-07-11 | 2010-10-13 | キヤノン株式会社 | 基板処理方法 |
TW565812B (en) * | 2000-07-21 | 2003-12-11 | Ebauchesfabrik Eta Ag | Display assembly including an electro-optical cell and a photovoltaic cell |
US20030044539A1 (en) * | 2001-02-06 | 2003-03-06 | Oswald Robert S. | Process for producing photovoltaic devices |
US20040020430A1 (en) * | 2002-07-26 | 2004-02-05 | Metal Oxide Technologies, Inc. | Method and apparatus for forming a thin film on a tape substrate |
US20040040506A1 (en) * | 2002-08-27 | 2004-03-04 | Ovshinsky Herbert C. | High throughput deposition apparatus |
DE502004009821D1 (de) * | 2004-04-13 | 2009-09-10 | Applied Materials Gmbh & Co Kg | Führungsanordnung mit mindestens einer Führungswalze für die Führung von Bändern in Bandbehandlungsanlagen |
US7176543B2 (en) * | 2005-01-26 | 2007-02-13 | United Solar Ovonic Corp. | Method of eliminating curl for devices on thin flexible substrates, and devices made thereby |
EP1884981A1 (en) * | 2006-08-03 | 2008-02-06 | STMicroelectronics Ltd (Malta) | Removable wafer expander for die bonding equipment. |
US9103033B2 (en) * | 2006-10-13 | 2015-08-11 | Solopower Systems, Inc. | Reel-to-reel reaction of precursor film to form solar cell absorber |
JP4831061B2 (ja) * | 2007-12-26 | 2011-12-07 | パナソニック株式会社 | 電子部品実装用装置および電子部品実装用装置の非常停止方法 |
US20100028533A1 (en) * | 2008-03-04 | 2010-02-04 | Brent Bollman | Methods and Devices for Processing a Precursor Layer in a Group VIA Environment |
JP5275346B2 (ja) * | 2008-06-24 | 2013-08-28 | パナソニック株式会社 | 色素増感太陽電池 |
CN102113092A (zh) * | 2008-08-04 | 2011-06-29 | 美国迅力光能公司 | 具有实时在线iv测量的卷对卷连续式薄膜pv制造工艺及设备 |
US20100024729A1 (en) * | 2008-08-04 | 2010-02-04 | Xinmin Cao | Methods and apparatuses for uniform plasma generation and uniform thin film deposition |
JP5532506B2 (ja) * | 2008-10-01 | 2014-06-25 | 日本電気硝子株式会社 | ガラスロール |
JP5435267B2 (ja) * | 2008-10-01 | 2014-03-05 | 日本電気硝子株式会社 | ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法 |
JP5532507B2 (ja) * | 2008-10-01 | 2014-06-25 | 日本電気硝子株式会社 | ガラスロール及びガラスロールの処理方法 |
JP5691148B2 (ja) | 2008-10-01 | 2015-04-01 | 日本電気硝子株式会社 | ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法 |
US20110081487A1 (en) * | 2009-03-04 | 2011-04-07 | Brent Bollman | Methods and devices for processing a precursor layer in a group via environment |
US8481355B2 (en) * | 2009-12-15 | 2013-07-09 | Primestar Solar, Inc. | Modular system and process for continuous deposition of a thin film layer on a substrate |
US8247255B2 (en) * | 2009-12-15 | 2012-08-21 | PrimeStar, Inc. | Modular system and process for continuous deposition of a thin film layer on a substrate |
CN102869810A (zh) * | 2010-02-03 | 2013-01-09 | 美国迅力光能公司 | 一种隔离腔室及使用该种隔离腔室制备太阳电池材料的方法 |
CN102983216B (zh) * | 2012-11-22 | 2015-11-25 | 深圳首创光伏有限公司 | 制造cigs薄膜太阳能电池的吸收层的反应装置及方法 |
US9449824B2 (en) | 2013-04-24 | 2016-09-20 | Natcore Technology, Inc. | Method for patterned doping of a semiconductor |
DE102014105747B4 (de) * | 2014-04-23 | 2024-02-22 | Uwe Beier | Modulare Vorrichtung zum Bearbeiten von flexiblen Substraten |
DE102014113036A1 (de) * | 2014-09-10 | 2015-08-20 | Von Ardenne Gmbh | Anordnung und Verfahren zur Beschichtung eines bandförmigen Substrats |
KR102622868B1 (ko) * | 2016-11-28 | 2024-01-08 | 엘지디스플레이 주식회사 | 열충격이 방지된 롤투롤 제조장치 |
US20210114832A1 (en) * | 2018-06-14 | 2021-04-22 | Applied Materials, Inc. | Roller device for guiding a flexible substrate, use of a roller device for transporting a flexible substrate, vacuum processing apparatus, and method of processing a flexible substrate |
US20230407469A1 (en) * | 2022-06-17 | 2023-12-21 | Raytheon Technologies Corporation | Continuous atmospheric pressure cvd tow coater process with in-situ air leak monitoring |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB724799A (en) * | 1953-02-20 | 1955-02-23 | Ohio Commw Eng Co | Method and apparatus for continuously plating irregularly shaped objects |
US2862705A (en) * | 1956-08-13 | 1958-12-02 | Time Inc | Threading mechanism |
US3083926A (en) * | 1959-06-17 | 1963-04-02 | Herr Equipment Corp | Strip handling |
ES378214A1 (es) * | 1969-05-19 | 1973-01-01 | Ibm | Un sistema para tratar material, especialmente semiconduc- tor. |
US4015558A (en) * | 1972-12-04 | 1977-04-05 | Optical Coating Laboratory, Inc. | Vapor deposition apparatus |
JPS55125680A (en) * | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
US4369730A (en) * | 1981-03-16 | 1983-01-25 | Energy Conversion Devices, Inc. | Cathode for generating a plasma |
US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
-
1983
- 1983-01-24 US US06/460,629 patent/US4485125A/en not_active Expired - Lifetime
- 1983-03-10 PH PH28628A patent/PH19696A/en unknown
- 1983-03-11 IT IT20045/83A patent/IT1160801B/it active
- 1983-03-11 IN IN301/CAL/83A patent/IN157932B/en unknown
- 1983-03-11 AU AU12414/83A patent/AU1241483A/en not_active Abandoned
- 1983-03-14 ES ES520583A patent/ES520583A0/es active Granted
- 1983-03-14 DE DE19833309079 patent/DE3309079A1/de not_active Withdrawn
- 1983-03-14 EG EG83171A patent/EG15199A/xx active
- 1983-03-14 BR BR8301264A patent/BR8301264A/pt unknown
- 1983-03-14 SE SE8301364A patent/SE8301364L/xx not_active Application Discontinuation
- 1983-03-14 MX MX196561A patent/MX153415A/es unknown
- 1983-03-14 IE IE541/83A patent/IE54229B1/en not_active IP Right Cessation
- 1983-03-14 FR FR8304135A patent/FR2542137A1/fr not_active Withdrawn
- 1983-03-14 GB GB08306966A patent/GB2117800B/en not_active Expired
- 1983-03-15 NL NL8300941A patent/NL8300941A/nl not_active Application Discontinuation
- 1983-03-15 GR GR70787A patent/GR82635B/el unknown
- 1983-03-18 CA CA000423993A patent/CA1188398A/en not_active Expired
- 1983-03-19 KR KR1019830001119A patent/KR840004311A/ko not_active Application Discontinuation
- 1983-03-25 IL IL68248A patent/IL68248A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
KR840004311A (ko) | 1984-10-10 |
SE8301364D0 (sv) | 1983-03-14 |
BR8301264A (pt) | 1983-11-22 |
IL68248A (en) | 1986-08-31 |
MX153415A (es) | 1986-10-07 |
GB8306966D0 (en) | 1983-04-20 |
DE3309079A1 (de) | 1983-09-29 |
US4485125A (en) | 1984-11-27 |
GB2117800A (en) | 1983-10-19 |
GB2117800B (en) | 1986-06-18 |
ES520583A0 (es) | 1984-03-01 |
IT8320045A0 (it) | 1983-03-11 |
IT8320045A1 (it) | 1984-09-11 |
IT1160801B (it) | 1987-03-11 |
IE830541L (en) | 1983-09-19 |
IN157932B (es) | 1986-07-26 |
IE54229B1 (en) | 1989-07-19 |
GR82635B (es) | 1985-02-07 |
EG15199A (en) | 1986-03-31 |
NL8300941A (nl) | 1983-10-17 |
AU1241483A (en) | 1983-10-20 |
FR2542137A1 (fr) | 1984-09-07 |
SE8301364L (sv) | 1983-09-20 |
CA1188398A (en) | 1985-06-04 |
PH19696A (en) | 1986-06-13 |
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