IL68248A - Method for the continuous production of photovoltaic cells - Google Patents
Method for the continuous production of photovoltaic cellsInfo
- Publication number
- IL68248A IL68248A IL68248A IL6824883A IL68248A IL 68248 A IL68248 A IL 68248A IL 68248 A IL68248 A IL 68248A IL 6824883 A IL6824883 A IL 6824883A IL 68248 A IL68248 A IL 68248A
- Authority
- IL
- Israel
- Prior art keywords
- continuous production
- photovoltaic cells
- photovoltaic
- cells
- continuous
- Prior art date
Links
- 238000010924 continuous production Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
- Y02A40/90—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in food processing or handling, e.g. food conservation
- Y02A40/963—Off-grid food refrigeration
- Y02A40/966—Powered by renewable energy sources
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
- Micro-Organisms Or Cultivation Processes Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/359,825 US4492181A (en) | 1982-03-19 | 1982-03-19 | Apparatus for continuously producing tandem amorphous photovoltaic cells |
US06/460,629 US4485125A (en) | 1982-03-19 | 1983-01-24 | Method for continuously producing tandem amorphous photovoltaic cells |
Publications (1)
Publication Number | Publication Date |
---|---|
IL68248A true IL68248A (en) | 1986-08-31 |
Family
ID=27000645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL68248A IL68248A (en) | 1982-03-19 | 1983-03-25 | Method for the continuous production of photovoltaic cells |
Country Status (19)
Country | Link |
---|---|
US (1) | US4485125A (es) |
KR (1) | KR840004311A (es) |
AU (1) | AU1241483A (es) |
BR (1) | BR8301264A (es) |
CA (1) | CA1188398A (es) |
DE (1) | DE3309079A1 (es) |
EG (1) | EG15199A (es) |
ES (1) | ES8403247A1 (es) |
FR (1) | FR2542137A1 (es) |
GB (1) | GB2117800B (es) |
GR (1) | GR82635B (es) |
IE (1) | IE54229B1 (es) |
IL (1) | IL68248A (es) |
IN (1) | IN157932B (es) |
IT (1) | IT1160801B (es) |
MX (1) | MX153415A (es) |
NL (1) | NL8300941A (es) |
PH (1) | PH19696A (es) |
SE (1) | SE8301364L (es) |
Families Citing this family (72)
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JPS60119784A (ja) * | 1983-12-01 | 1985-06-27 | Kanegafuchi Chem Ind Co Ltd | 絶縁金属基板の製法およびそれに用いる装置 |
US5258075A (en) * | 1983-06-30 | 1993-11-02 | Canon Kabushiki Kaisha | Process for producing photoconductive member and apparatus for producing the same |
DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
JPS60170234A (ja) * | 1984-02-15 | 1985-09-03 | Semiconductor Energy Lab Co Ltd | 気相反応装置および気相反応被膜作製方法 |
US5780313A (en) * | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
DE3427057A1 (de) * | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
JPS6179755A (ja) * | 1984-09-28 | 1986-04-23 | Nisshin Steel Co Ltd | 溶融めつき真空蒸着めつき兼用の連続めつき装置 |
US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4784874A (en) * | 1985-02-20 | 1988-11-15 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
US4664951A (en) * | 1985-07-31 | 1987-05-12 | Energy Conversion Devices, Inc. | Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
JPH0647727B2 (ja) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
JPS62271418A (ja) * | 1986-05-20 | 1987-11-25 | Matsushita Electric Ind Co Ltd | 非晶質シリコン半導体素子の製造方法 |
US4763601A (en) * | 1987-09-02 | 1988-08-16 | Nippon Steel Corporation | Continuous composite coating apparatus for coating strip |
US4842892A (en) * | 1987-09-29 | 1989-06-27 | Xerox Corporation | Method for depositing an n+ amorphous silicon layer onto contaminated substrate |
IT1227877B (it) * | 1988-11-25 | 1991-05-14 | Eniricerche S P A Agip S P A | Procedimento per la deposizione via plasma di strati multipli dimate riale amorfo a composizione variabile |
JPH0340447A (ja) * | 1989-07-07 | 1991-02-21 | Sankyo Seiki Mfg Co Ltd | リール制御方法 |
US5176758A (en) * | 1991-05-20 | 1993-01-05 | United Solar Systems Corporation | Translucent photovoltaic sheet material and panels |
US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
US5946587A (en) * | 1992-08-06 | 1999-08-31 | Canon Kabushiki Kaisha | Continuous forming method for functional deposited films |
DE4313284A1 (de) * | 1993-04-23 | 1994-10-27 | Leybold Ag | Spaltschleuse für das Ein- oder Ausbringen von Substraten von der einen in eine benachbarte Behandlungskammer |
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US5563095A (en) * | 1994-12-01 | 1996-10-08 | Frey; Jeffrey | Method for manufacturing semiconductor devices |
US6273955B1 (en) | 1995-08-28 | 2001-08-14 | Canon Kabushiki Kaisha | Film forming apparatus |
JP3332700B2 (ja) | 1995-12-22 | 2002-10-07 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
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US6362020B1 (en) | 1998-01-30 | 2002-03-26 | Canon Kabushiki Kaisha | Process of forming deposited film, process of producing semiconductor element substrate, and process of producing photovoltaic element |
JP2000077402A (ja) * | 1998-09-02 | 2000-03-14 | Tokyo Electron Ltd | プラズマ処理方法および半導体装置 |
JP2000204478A (ja) | 1998-11-11 | 2000-07-25 | Canon Inc | 基板処理装置及び基板処理方法 |
JP4387573B2 (ja) * | 1999-10-26 | 2009-12-16 | 東京エレクトロン株式会社 | プロセス排気ガスモニタ装置及び方法、半導体製造装置、及び半導体製造装置管理システム及び方法 |
JP2002080151A (ja) | 2000-03-28 | 2002-03-19 | Canon Inc | ウェブ搬送装置及び搬送方法、並びに電析装置及び電析方法 |
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JP4562152B2 (ja) | 2000-07-11 | 2010-10-13 | キヤノン株式会社 | 基板処理方法 |
TW565812B (en) * | 2000-07-21 | 2003-12-11 | Ebauchesfabrik Eta Ag | Display assembly including an electro-optical cell and a photovoltaic cell |
US20030044539A1 (en) * | 2001-02-06 | 2003-03-06 | Oswald Robert S. | Process for producing photovoltaic devices |
US20040020430A1 (en) * | 2002-07-26 | 2004-02-05 | Metal Oxide Technologies, Inc. | Method and apparatus for forming a thin film on a tape substrate |
US20040040506A1 (en) * | 2002-08-27 | 2004-03-04 | Ovshinsky Herbert C. | High throughput deposition apparatus |
DE502004009821D1 (de) * | 2004-04-13 | 2009-09-10 | Applied Materials Gmbh & Co Kg | Führungsanordnung mit mindestens einer Führungswalze für die Führung von Bändern in Bandbehandlungsanlagen |
US7176543B2 (en) * | 2005-01-26 | 2007-02-13 | United Solar Ovonic Corp. | Method of eliminating curl for devices on thin flexible substrates, and devices made thereby |
EP1884981A1 (en) * | 2006-08-03 | 2008-02-06 | STMicroelectronics Ltd (Malta) | Removable wafer expander for die bonding equipment. |
US9103033B2 (en) * | 2006-10-13 | 2015-08-11 | Solopower Systems, Inc. | Reel-to-reel reaction of precursor film to form solar cell absorber |
JP4831061B2 (ja) * | 2007-12-26 | 2011-12-07 | パナソニック株式会社 | 電子部品実装用装置および電子部品実装用装置の非常停止方法 |
US20100028533A1 (en) * | 2008-03-04 | 2010-02-04 | Brent Bollman | Methods and Devices for Processing a Precursor Layer in a Group VIA Environment |
JP5275346B2 (ja) * | 2008-06-24 | 2013-08-28 | パナソニック株式会社 | 色素増感太陽電池 |
US8298339B2 (en) * | 2008-08-04 | 2012-10-30 | Xunlight Corporation | Roll-to-roll continuous thin film PV manufacturing process and equipment with real time online IV measurement |
US20100024729A1 (en) * | 2008-08-04 | 2010-02-04 | Xinmin Cao | Methods and apparatuses for uniform plasma generation and uniform thin film deposition |
JP5435267B2 (ja) * | 2008-10-01 | 2014-03-05 | 日本電気硝子株式会社 | ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法 |
JP5691148B2 (ja) | 2008-10-01 | 2015-04-01 | 日本電気硝子株式会社 | ガラスロール、ガラスロールの製造装置、及びガラスロールの製造方法 |
JP5532506B2 (ja) * | 2008-10-01 | 2014-06-25 | 日本電気硝子株式会社 | ガラスロール |
JP5532507B2 (ja) * | 2008-10-01 | 2014-06-25 | 日本電気硝子株式会社 | ガラスロール及びガラスロールの処理方法 |
US20110081487A1 (en) * | 2009-03-04 | 2011-04-07 | Brent Bollman | Methods and devices for processing a precursor layer in a group via environment |
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US8481355B2 (en) * | 2009-12-15 | 2013-07-09 | Primestar Solar, Inc. | Modular system and process for continuous deposition of a thin film layer on a substrate |
WO2011097012A1 (en) * | 2010-02-03 | 2011-08-11 | Xunlight Corporation | An isolation chamber and method of using the isolation chamber to make solar cell material |
CN102983216B (zh) * | 2012-11-22 | 2015-11-25 | 深圳首创光伏有限公司 | 制造cigs薄膜太阳能电池的吸收层的反应装置及方法 |
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DE102014105747B4 (de) * | 2014-04-23 | 2024-02-22 | Uwe Beier | Modulare Vorrichtung zum Bearbeiten von flexiblen Substraten |
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KR102622868B1 (ko) | 2016-11-28 | 2024-01-08 | 엘지디스플레이 주식회사 | 열충격이 방지된 롤투롤 제조장치 |
CN112334596B (zh) * | 2018-06-14 | 2023-10-20 | 应用材料公司 | 用于导引柔性基板的滚轴装置、用于传送柔性基板的滚轴装置的用途、真空处理设备及处理柔性基板的方法 |
US20230407469A1 (en) * | 2022-06-17 | 2023-12-21 | Raytheon Technologies Corporation | Continuous atmospheric pressure cvd tow coater process with in-situ air leak monitoring |
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GB724799A (en) * | 1953-02-20 | 1955-02-23 | Ohio Commw Eng Co | Method and apparatus for continuously plating irregularly shaped objects |
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JPS55125680A (en) * | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
US4369730A (en) * | 1981-03-16 | 1983-01-25 | Energy Conversion Devices, Inc. | Cathode for generating a plasma |
US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
US4379943A (en) * | 1981-12-14 | 1983-04-12 | Energy Conversion Devices, Inc. | Current enhanced photovoltaic device |
-
1983
- 1983-01-24 US US06/460,629 patent/US4485125A/en not_active Expired - Lifetime
- 1983-03-10 PH PH28628A patent/PH19696A/en unknown
- 1983-03-11 IN IN301/CAL/83A patent/IN157932B/en unknown
- 1983-03-11 IT IT20045/83A patent/IT1160801B/it active
- 1983-03-11 AU AU12414/83A patent/AU1241483A/en not_active Abandoned
- 1983-03-14 SE SE8301364A patent/SE8301364L/xx not_active Application Discontinuation
- 1983-03-14 BR BR8301264A patent/BR8301264A/pt unknown
- 1983-03-14 FR FR8304135A patent/FR2542137A1/fr not_active Withdrawn
- 1983-03-14 DE DE19833309079 patent/DE3309079A1/de not_active Withdrawn
- 1983-03-14 IE IE541/83A patent/IE54229B1/en not_active IP Right Cessation
- 1983-03-14 GB GB08306966A patent/GB2117800B/en not_active Expired
- 1983-03-14 ES ES520583A patent/ES8403247A1/es not_active Expired
- 1983-03-14 MX MX196561A patent/MX153415A/es unknown
- 1983-03-14 EG EG83171A patent/EG15199A/xx active
- 1983-03-15 GR GR70787A patent/GR82635B/el unknown
- 1983-03-15 NL NL8300941A patent/NL8300941A/nl not_active Application Discontinuation
- 1983-03-18 CA CA000423993A patent/CA1188398A/en not_active Expired
- 1983-03-19 KR KR1019830001119A patent/KR840004311A/ko not_active Application Discontinuation
- 1983-03-25 IL IL68248A patent/IL68248A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
EG15199A (en) | 1986-03-31 |
AU1241483A (en) | 1983-10-20 |
GB8306966D0 (en) | 1983-04-20 |
CA1188398A (en) | 1985-06-04 |
GB2117800B (en) | 1986-06-18 |
PH19696A (en) | 1986-06-13 |
ES520583A0 (es) | 1984-03-01 |
SE8301364D0 (sv) | 1983-03-14 |
GB2117800A (en) | 1983-10-19 |
GR82635B (es) | 1985-02-07 |
IN157932B (es) | 1986-07-26 |
SE8301364L (sv) | 1983-09-20 |
NL8300941A (nl) | 1983-10-17 |
BR8301264A (pt) | 1983-11-22 |
IE54229B1 (en) | 1989-07-19 |
DE3309079A1 (de) | 1983-09-29 |
IT8320045A0 (it) | 1983-03-11 |
IT1160801B (it) | 1987-03-11 |
IT8320045A1 (it) | 1984-09-11 |
MX153415A (es) | 1986-10-07 |
KR840004311A (ko) | 1984-10-10 |
US4485125A (en) | 1984-11-27 |
FR2542137A1 (fr) | 1984-09-07 |
IE830541L (en) | 1983-09-19 |
ES8403247A1 (es) | 1984-03-01 |
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