SE8000017L - Styrelektrodreglerad halvledaranordning - Google Patents

Styrelektrodreglerad halvledaranordning

Info

Publication number
SE8000017L
SE8000017L SE8000017A SE8000017A SE8000017L SE 8000017 L SE8000017 L SE 8000017L SE 8000017 A SE8000017 A SE 8000017A SE 8000017 A SE8000017 A SE 8000017A SE 8000017 L SE8000017 L SE 8000017L
Authority
SE
Sweden
Prior art keywords
wafer
control electrode
semiconductor device
electrode member
main
Prior art date
Application number
SE8000017A
Other languages
Unknown language ( )
English (en)
Other versions
SE445084B (sv
Inventor
T Sueoka
S Ishibashi
Original Assignee
Meidensha Electric Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Mfg Co Ltd filed Critical Meidensha Electric Mfg Co Ltd
Publication of SE8000017L publication Critical patent/SE8000017L/sv
Publication of SE445084B publication Critical patent/SE445084B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
SE8000017A 1979-01-29 1980-01-02 Styrelektrodreglerad halvledaranordning SE445084B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP956679A JPS55102267A (en) 1979-01-29 1979-01-29 Semiconductor control element

Publications (2)

Publication Number Publication Date
SE8000017L true SE8000017L (sv) 1980-07-30
SE445084B SE445084B (sv) 1986-05-26

Family

ID=11723836

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8000017A SE445084B (sv) 1979-01-29 1980-01-02 Styrelektrodreglerad halvledaranordning

Country Status (5)

Country Link
US (1) US4291325A (sv)
JP (1) JPS55102267A (sv)
DE (1) DE3002897C2 (sv)
GB (1) GB2040567B (sv)
SE (1) SE445084B (sv)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607394B2 (ja) * 1978-08-18 1985-02-23 株式会社明電舎 半導体制御素子
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ
JPS6099552U (ja) * 1983-12-12 1985-07-06 日本インター株式会社 ゲ−トタ−ンオフサイリスタ
US4611235A (en) * 1984-06-04 1986-09-09 General Motors Corporation Thyristor with turn-off FET
JPH0691245B2 (ja) * 1985-06-26 1994-11-14 株式会社日立製作所 ゲ−トタ−ンオフサイリスタ
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
US7459367B2 (en) * 2005-07-27 2008-12-02 International Business Machines Corporation Method of forming a vertical P-N junction device
US20070114565A1 (en) * 2005-11-23 2007-05-24 Makaram Udaysimha A Integrated field-effect transistor-thyristor device
CN104600101A (zh) * 2015-02-03 2015-05-06 清华大学 一种集成门极换流晶闸管芯片的双门极接触环阴极面结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1803935A1 (de) * 1967-10-20 1969-10-02 Ckd Praha Mehrschichtiges Halbleiterbauelement mit zumindest vier pn-UEbergaengen
US3609476A (en) * 1970-06-26 1971-09-28 Gen Electric Interdigitated structures for gate turnoff thyristors and for transistors
DE2241217C3 (de) * 1972-08-22 1978-07-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit
GB1410726A (en) * 1972-01-24 1975-10-22 Licentia Gmbh Thyristor with increased switching on an switching through speed
FR2299727A1 (fr) * 1975-01-28 1976-08-27 Alsthom Cgee Thyristor a caracteristiques de commutation ameliorees
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
JPS54757A (en) * 1977-06-03 1979-01-06 Kousuke Harada Low power driving system for magnetic core

Also Published As

Publication number Publication date
SE445084B (sv) 1986-05-26
JPS6130754B2 (sv) 1986-07-15
DE3002897C2 (de) 1984-11-08
GB2040567B (en) 1983-11-02
JPS55102267A (en) 1980-08-05
GB2040567A (en) 1980-08-28
DE3002897A1 (de) 1980-08-07
US4291325A (en) 1981-09-22

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