NL189327C - Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan. - Google Patents
Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan.Info
- Publication number
- NL189327C NL189327C NLAANVRAGE7702141,A NL7702141A NL189327C NL 189327 C NL189327 C NL 189327C NL 7702141 A NL7702141 A NL 7702141A NL 189327 C NL189327 C NL 189327C
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- semiconductor device
- field effect
- control area
- memory operation
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2199876A JPS52105784A (en) | 1976-03-01 | 1976-03-01 | Mios type memory unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL7702141A NL7702141A (nl) | 1977-09-05 |
| NL189327C true NL189327C (nl) | 1993-03-01 |
Family
ID=12070678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NLAANVRAGE7702141,A NL189327C (nl) | 1976-03-01 | 1977-02-28 | Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4101921A (nl) |
| JP (1) | JPS52105784A (nl) |
| CA (1) | CA1094221A (nl) |
| DE (1) | DE2708599C2 (nl) |
| GB (1) | GB1553742A (nl) |
| NL (1) | NL189327C (nl) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4151538A (en) * | 1978-01-30 | 1979-04-24 | Rca Corp. | Nonvolatile semiconductive memory device and method of its manufacture |
| US4307411A (en) * | 1978-01-30 | 1981-12-22 | Rca Corporation | Nonvolatile semiconductor memory device and method of its manufacture |
| US4198252A (en) * | 1978-04-06 | 1980-04-15 | Rca Corporation | MNOS memory device |
| US4197630A (en) * | 1978-08-25 | 1980-04-15 | Rca Corporation | Method of fabricating MNOS transistors having implanted channels |
| US4212684A (en) * | 1978-11-20 | 1980-07-15 | Ncr Corporation | CISFET Processing including simultaneous doping of silicon components and FET channels |
| US4353083A (en) * | 1978-11-27 | 1982-10-05 | Ncr Corporation | Low voltage nonvolatile memory device |
| WO1980001122A1 (en) * | 1978-11-27 | 1980-05-29 | Ncr Co | Semiconductor memory device |
| DE2923995C2 (de) * | 1979-06-13 | 1985-11-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie |
| US4262298A (en) * | 1979-09-04 | 1981-04-14 | Burroughs Corporation | Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates |
| US4395725A (en) * | 1980-10-14 | 1983-07-26 | Parekh Rajesh H | Segmented channel field effect transistors |
| US4521796A (en) * | 1980-12-11 | 1985-06-04 | General Instrument Corporation | Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device |
| US4467452A (en) * | 1981-02-12 | 1984-08-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Nonvolatile semiconductor memory device and method of fabricating the same |
| JPS57133679A (en) * | 1981-02-12 | 1982-08-18 | Toshiba Corp | Manufacture of nonvolatile semiconductor memory storage |
| JPS5816573A (ja) * | 1981-07-22 | 1983-01-31 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
| US4455742A (en) * | 1982-06-07 | 1984-06-26 | Westinghouse Electric Corp. | Method of making self-aligned memory MNOS-transistor |
| DE3316096A1 (de) * | 1983-05-03 | 1984-11-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von speicherzellen mit einem ein schwebendes gate aufweisenden mos-feldeffekttransistor |
| US4951103A (en) * | 1988-06-03 | 1990-08-21 | Texas Instruments, Incorporated | Fast, trench isolated, planar flash EEPROMS with silicided bitlines |
| JPH02359A (ja) * | 1988-09-09 | 1990-01-05 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP3321899B2 (ja) * | 1992-12-04 | 2002-09-09 | 株式会社デンソー | 半導体装置 |
| US6479846B2 (en) | 2000-03-22 | 2002-11-12 | Ophir Rf, Inc. | Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity |
| KR100663344B1 (ko) * | 2004-06-17 | 2007-01-02 | 삼성전자주식회사 | 적어도 두 개의 다른 채널농도를 갖는 비휘발성 플래시메모리 소자 및 그 제조방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS511588B2 (nl) * | 1971-11-01 | 1976-01-19 | ||
| JPS5330310B2 (nl) * | 1972-09-13 | 1978-08-25 | ||
| US3877055A (en) * | 1972-11-13 | 1975-04-08 | Motorola Inc | Semiconductor memory device |
| JPS571149B2 (nl) * | 1974-08-28 | 1982-01-09 |
-
1976
- 1976-03-01 JP JP2199876A patent/JPS52105784A/ja active Pending
-
1977
- 1977-02-25 GB GB8064/77A patent/GB1553742A/en not_active Expired
- 1977-02-25 US US05/772,099 patent/US4101921A/en not_active Expired - Lifetime
- 1977-02-28 CA CA272,825A patent/CA1094221A/en not_active Expired
- 1977-02-28 NL NLAANVRAGE7702141,A patent/NL189327C/nl not_active IP Right Cessation
- 1977-02-28 DE DE2708599A patent/DE2708599C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4101921A (en) | 1978-07-18 |
| NL7702141A (nl) | 1977-09-05 |
| CA1094221A (en) | 1981-01-20 |
| DE2708599C2 (de) | 1986-10-16 |
| GB1553742A (en) | 1979-09-26 |
| JPS52105784A (en) | 1977-09-05 |
| DE2708599A1 (de) | 1977-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| NL189327C (nl) | Halfgeleiderinrichting met veldeffekt, geisoleerd stuurgebied en geheugenwerking en werkwijze voor de vervaardiging hiervan. | |
| NL7707297A (nl) | Halfgeleider-geheugeninrichting. | |
| NL7707919A (nl) | Halfgeleider alsmede werkwijze ter vervaardiging daarvan. | |
| NL187508C (nl) | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. | |
| NL7604569A (nl) | Veldemitterinrichting en werkwijze tot het vormen daarvan. | |
| NL7701367A (nl) | Werkwijze en inrichting voor het etsen. | |
| NL185348C (nl) | Zachte contactlens, alsmede werkwijze voor de vervaardiging daarvan. | |
| NL7701119A (nl) | Halfgeleiderinrichting en werkwijze voor de ver- vaardiging daarvan. | |
| NL7612883A (nl) | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. | |
| NL178729C (nl) | Halfgeleidergeheugen. | |
| NL7704864A (nl) | Halfgeleidergeheugen. | |
| NL7709931A (nl) | Halfgeleider-geheugeninrichting. | |
| NL173572C (nl) | Halfgeleiderinrichting. | |
| NL190211C (nl) | Dynamische halfgeleidergeheugeninrichting. | |
| NL7806006A (nl) | Halfgeleiderinrichting en werkwijze voor het vervaardi- gen ervan. | |
| NL7713773A (nl) | Steun, en werkwijze voor het vervaardigen daar- van. | |
| NL179244C (nl) | Halfgeleidergeheugen. | |
| NL7710712A (nl) | Elektrochemische inrichting en werkwijze voor het vervaardigen daarvan. | |
| NL161301C (nl) | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. | |
| NL7709870A (nl) | Complementair geisoleerde veldeffecthalfgeleider- inrichting met poortwerking en werkwijze voor de vervaardiging daarvan. | |
| NL190254C (nl) | Halfgeleiderinrichting met geisoleerd gebied en werkwijze voor het vervaardigen daarvan. | |
| NL7710360A (nl) | Halfgeleidergeheugen. | |
| NL7701172A (nl) | Halfgeleidergeheugeninrichting. | |
| NL7501990A (nl) | Halfgeleiderinrichting, alsmede werkwijze voor de vervaardiging daarvan. | |
| NL7711080A (nl) | Draaibare vorminrichting en werkwijze voor het draaiend vormen. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V1 | Lapsed because of non-payment of the annual fee |