SE7803096L - Metod for les- och/eller skrivaccess till minnen och krets for genomforande av metoden - Google Patents
Metod for les- och/eller skrivaccess till minnen och krets for genomforande av metodenInfo
- Publication number
- SE7803096L SE7803096L SE7803096A SE7803096A SE7803096L SE 7803096 L SE7803096 L SE 7803096L SE 7803096 A SE7803096 A SE 7803096A SE 7803096 A SE7803096 A SE 7803096A SE 7803096 L SE7803096 L SE 7803096L
- Authority
- SE
- Sweden
- Prior art keywords
- memories
- implementing
- circuits
- reading
- writing access
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2712735A DE2712735B1 (de) | 1977-03-23 | 1977-03-23 | Lese-/Schreibzugriffschaltung zu Speicherzellen eines Speichers und Verfahren zu ihrem Betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7803096L true SE7803096L (sv) | 1978-09-24 |
SE422853B SE422853B (sv) | 1982-03-29 |
Family
ID=6004436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7803096A SE422853B (sv) | 1977-03-23 | 1978-03-17 | Metod for les- och/eller skivaccess till minnen och krets for genomforande av metoden |
Country Status (8)
Country | Link |
---|---|
US (1) | US4112512A (sv) |
JP (1) | JPS6044751B2 (sv) |
DE (1) | DE2712735B1 (sv) |
FR (1) | FR2385179A1 (sv) |
GB (1) | GB1560367A (sv) |
IT (1) | IT1110464B (sv) |
NL (1) | NL7803023A (sv) |
SE (1) | SE422853B (sv) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2855118C2 (de) * | 1978-12-20 | 1981-03-26 | IBM Deutschland GmbH, 70569 Stuttgart | Dynamischer FET-Speicher |
US4274013A (en) * | 1979-02-09 | 1981-06-16 | Bell Telephone Laboratories, Incorporated | Sense amplifier |
JPS595989B2 (ja) * | 1980-02-16 | 1984-02-08 | 富士通株式会社 | スタティック型ランダムアクセスメモリ |
US4344156A (en) * | 1980-10-10 | 1982-08-10 | Inmos Corporation | High speed data transfer for a semiconductor memory |
JPS589285A (ja) * | 1981-07-08 | 1983-01-19 | Toshiba Corp | 半導体装置 |
EP0078338B1 (de) * | 1981-10-30 | 1986-02-05 | Ibm Deutschland Gmbh | FET-Speicher |
JPS6151692A (ja) * | 1984-08-22 | 1986-03-14 | Hitachi Ltd | 記憶装置 |
JPS61239493A (ja) * | 1985-04-05 | 1986-10-24 | Fujitsu Ltd | 半導体記憶装置 |
JPH0766664B2 (ja) * | 1988-11-28 | 1995-07-19 | 日本電気株式会社 | 半導体メモリ回路 |
JPH0762955B2 (ja) * | 1989-05-15 | 1995-07-05 | 株式会社東芝 | ダイナミック型ランダムアクセスメモリ |
JPH02301097A (ja) * | 1989-05-15 | 1990-12-13 | Toshiba Corp | ダイナミック型ランダムアクセスメモリ |
JPH03154288A (ja) * | 1989-11-10 | 1991-07-02 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2781080B2 (ja) * | 1991-04-09 | 1998-07-30 | 三菱電機株式会社 | ランダムアクセスメモリ |
US5907251A (en) * | 1996-11-22 | 1999-05-25 | International Business Machines Corp. | Low voltage swing capacitive bus driver device |
US6195027B1 (en) | 1999-04-30 | 2001-02-27 | International Business Machines Corporation | Capacitive precharging and discharging network for converting N bit input into M bit output |
US6549476B2 (en) | 2001-04-09 | 2003-04-15 | Micron Technology, Inc. | Device and method for using complementary bits in a memory array |
US6791859B2 (en) | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6791885B2 (en) * | 2002-02-19 | 2004-09-14 | Micron Technology, Inc. | Programmable conductor random access memory and method for sensing same |
US6731528B2 (en) * | 2002-05-03 | 2004-05-04 | Micron Technology, Inc. | Dual write cycle programmable conductor memory system and method of operation |
JP2012114215A (ja) * | 2010-11-24 | 2012-06-14 | Elpida Memory Inc | 半導体装置及びそのレイアウト方法 |
WO2013158088A1 (en) * | 2012-04-18 | 2013-10-24 | Hewlett-Packard Development Company, L.P. | Circuit providing dc voltages to differential signal lines via restore pulse |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3676704A (en) * | 1970-12-29 | 1972-07-11 | Ibm | Monolithic memory sense amplifier/bit driver |
US3760381A (en) * | 1972-06-30 | 1973-09-18 | Ibm | Stored charge memory detection circuit |
US3771147A (en) * | 1972-12-04 | 1973-11-06 | Bell Telephone Labor Inc | Igfet memory system |
US3806898A (en) * | 1973-06-29 | 1974-04-23 | Ibm | Regeneration of dynamic monolithic memories |
US3949381A (en) * | 1974-07-23 | 1976-04-06 | International Business Machines Corporation | Differential charge transfer sense amplifier |
US3967252A (en) * | 1974-10-03 | 1976-06-29 | Mostek Corporation | Sense AMP for random access memory |
-
1977
- 1977-03-23 DE DE2712735A patent/DE2712735B1/de active Granted
- 1977-12-22 US US05/863,566 patent/US4112512A/en not_active Expired - Lifetime
-
1978
- 1978-02-15 FR FR7804979A patent/FR2385179A1/fr active Granted
- 1978-02-22 GB GB7134/78A patent/GB1560367A/en not_active Expired
- 1978-03-03 JP JP53023694A patent/JPS6044751B2/ja not_active Expired
- 1978-03-15 IT IT21202/78A patent/IT1110464B/it active
- 1978-03-17 SE SE7803096A patent/SE422853B/sv unknown
- 1978-03-21 NL NL7803023A patent/NL7803023A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2385179B1 (sv) | 1980-01-04 |
JPS6044751B2 (ja) | 1985-10-05 |
SE422853B (sv) | 1982-03-29 |
DE2712735C2 (sv) | 1979-05-17 |
US4112512A (en) | 1978-09-05 |
IT7821202A0 (it) | 1978-03-15 |
FR2385179A1 (fr) | 1978-10-20 |
NL7803023A (nl) | 1978-09-26 |
GB1560367A (en) | 1980-02-06 |
IT1110464B (it) | 1985-12-23 |
JPS53117344A (en) | 1978-10-13 |
DE2712735B1 (de) | 1978-09-14 |
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