SE522417C2 - Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator - Google Patents
Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulatorInfo
- Publication number
- SE522417C2 SE522417C2 SE9803522A SE9803522A SE522417C2 SE 522417 C2 SE522417 C2 SE 522417C2 SE 9803522 A SE9803522 A SE 9803522A SE 9803522 A SE9803522 A SE 9803522A SE 522417 C2 SE522417 C2 SE 522417C2
- Authority
- SE
- Sweden
- Prior art keywords
- modulator
- waveguide
- absorption
- waveguide core
- electro
- Prior art date
Links
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000004044 response Effects 0.000 claims abstract description 7
- 238000000206 photolithography Methods 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 7
- 230000001419 dependent effect Effects 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005253 cladding Methods 0.000 abstract 1
- 239000011162 core material Substances 0.000 description 40
- 239000010410 layer Substances 0.000 description 29
- 230000008569 process Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9803522A SE522417C2 (sv) | 1998-10-15 | 1998-10-15 | Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator |
| TW087117609A TW418541B (en) | 1998-10-15 | 1998-10-23 | Modulator and method for manufacturing of such a modulator |
| CA002346654A CA2346654A1 (en) | 1998-10-15 | 1999-10-08 | Electro-absorption modulator and method for manufacturing of such a modulator |
| CNB99814164XA CN1149425C (zh) | 1998-10-15 | 1999-10-08 | 电吸附调制器及制造该调制器的方法 |
| PCT/SE1999/001807 WO2000022477A1 (en) | 1998-10-15 | 1999-10-08 | Electro-absorption modulator and method for manufacturing of such a modulator |
| EP99970475A EP1121621A1 (en) | 1998-10-15 | 1999-10-08 | Electro-absorption modulator and method for manufacturing of such a modulator |
| JP2000576316A JP2002527793A (ja) | 1998-10-15 | 1999-10-08 | 電界効果光吸収変調器とその製造法 |
| KR1020017004688A KR100630514B1 (ko) | 1998-10-15 | 1999-10-08 | 전기 흡수 변조기 및 그러한 변조기를 제조하는 방법 |
| AU14225/00A AU1422500A (en) | 1998-10-15 | 1999-10-08 | Electro-absorption modulator and method for manufacturing of such a modulator |
| US09/418,369 US6332048B1 (en) | 1998-10-15 | 1999-10-14 | Modulator and method for manufacturing of such a modulator |
| HK02104784.0A HK1043203B (zh) | 1998-10-15 | 2002-06-27 | 電吸附調制器及製造該調制器的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9803522A SE522417C2 (sv) | 1998-10-15 | 1998-10-15 | Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9803522D0 SE9803522D0 (sv) | 1998-10-15 |
| SE9803522L SE9803522L (sv) | 2000-04-16 |
| SE522417C2 true SE522417C2 (sv) | 2004-02-10 |
Family
ID=20412962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9803522A SE522417C2 (sv) | 1998-10-15 | 1998-10-15 | Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6332048B1 (zh) |
| EP (1) | EP1121621A1 (zh) |
| JP (1) | JP2002527793A (zh) |
| KR (1) | KR100630514B1 (zh) |
| CN (1) | CN1149425C (zh) |
| AU (1) | AU1422500A (zh) |
| CA (1) | CA2346654A1 (zh) |
| HK (1) | HK1043203B (zh) |
| SE (1) | SE522417C2 (zh) |
| TW (1) | TW418541B (zh) |
| WO (1) | WO2000022477A1 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2420882A1 (en) * | 2010-08-16 | 2012-02-22 | Alcatel Lucent | Active photonic device with flattened photo-generated carrier distribution |
| JP2012083473A (ja) * | 2010-10-08 | 2012-04-26 | Anritsu Corp | 光ゲート素子 |
| CN102169243A (zh) * | 2011-04-28 | 2011-08-31 | 中国科学院半导体研究所 | 亚微米波导型Ge量子阱电光调制器 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2374657A1 (fr) * | 1976-12-15 | 1978-07-13 | Rivoallan Loic | Dispositif electro-optique de modulation de lumiere guidee dans une couche mince |
| JPH06100737B2 (ja) * | 1988-02-26 | 1994-12-12 | 国際電信電話株式会社 | 光変調素子 |
| US4913506A (en) * | 1988-02-26 | 1990-04-03 | Kokusai Denshin Denwa Kabushiki Kaisha | Optical modulation device |
| JPH0355514A (ja) * | 1989-07-25 | 1991-03-11 | Fujitsu Ltd | 光変調器 |
| JPH04188677A (ja) * | 1990-11-19 | 1992-07-07 | Fujitsu Ltd | 吸収型光変調器 |
| GB9318666D0 (en) * | 1993-09-09 | 1993-10-27 | Northern Telecom Ltd | Electro-absorption optical modulators |
| JPH0837341A (ja) * | 1994-07-22 | 1996-02-06 | Hitachi Ltd | 半導体光集積素子およびその製造方法 |
| JP2809124B2 (ja) * | 1995-02-09 | 1998-10-08 | 日本電気株式会社 | 光半導体集積素子およびその製造方法 |
| FR2730821B1 (fr) * | 1995-02-22 | 1997-04-30 | Alcatel Optronics | Guide optique segmente pouvant notamment etre inclus dans un dispositif semiconducteur |
| JP2955986B2 (ja) * | 1996-05-22 | 1999-10-04 | 日本電気株式会社 | 半導体光変調器及びその製造方法 |
| JP3196958B2 (ja) * | 1996-08-22 | 2001-08-06 | 日本電信電話株式会社 | 変調器集積半導体レーザ |
| JPH10163568A (ja) * | 1996-12-03 | 1998-06-19 | Mitsubishi Electric Corp | 変調器集積半導体レーザ |
| JP2967737B2 (ja) * | 1996-12-05 | 1999-10-25 | 日本電気株式会社 | 光半導体装置とその製造方法 |
| JP3655079B2 (ja) * | 1997-01-31 | 2005-06-02 | 株式会社東芝 | 光半導体素子 |
| JPH10256669A (ja) * | 1997-03-14 | 1998-09-25 | Mitsubishi Electric Corp | 光変調器集積半導体レーザダイオード |
-
1998
- 1998-10-15 SE SE9803522A patent/SE522417C2/sv not_active IP Right Cessation
- 1998-10-23 TW TW087117609A patent/TW418541B/zh not_active IP Right Cessation
-
1999
- 1999-10-08 JP JP2000576316A patent/JP2002527793A/ja active Pending
- 1999-10-08 KR KR1020017004688A patent/KR100630514B1/ko not_active IP Right Cessation
- 1999-10-08 CA CA002346654A patent/CA2346654A1/en not_active Abandoned
- 1999-10-08 WO PCT/SE1999/001807 patent/WO2000022477A1/en not_active Application Discontinuation
- 1999-10-08 CN CNB99814164XA patent/CN1149425C/zh not_active Expired - Fee Related
- 1999-10-08 EP EP99970475A patent/EP1121621A1/en not_active Withdrawn
- 1999-10-08 AU AU14225/00A patent/AU1422500A/en not_active Abandoned
- 1999-10-14 US US09/418,369 patent/US6332048B1/en not_active Expired - Fee Related
-
2002
- 2002-06-27 HK HK02104784.0A patent/HK1043203B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| HK1043203B (zh) | 2005-02-25 |
| KR100630514B1 (ko) | 2006-09-29 |
| SE9803522L (sv) | 2000-04-16 |
| SE9803522D0 (sv) | 1998-10-15 |
| CA2346654A1 (en) | 2000-04-20 |
| JP2002527793A (ja) | 2002-08-27 |
| HK1043203A1 (en) | 2002-09-06 |
| AU1422500A (en) | 2000-05-01 |
| KR20010080155A (ko) | 2001-08-22 |
| WO2000022477A1 (en) | 2000-04-20 |
| US6332048B1 (en) | 2001-12-18 |
| TW418541B (en) | 2001-01-11 |
| CN1329724A (zh) | 2002-01-02 |
| EP1121621A1 (en) | 2001-08-08 |
| CN1149425C (zh) | 2004-05-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |