SE522417C2 - Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator - Google Patents

Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator

Info

Publication number
SE522417C2
SE522417C2 SE9803522A SE9803522A SE522417C2 SE 522417 C2 SE522417 C2 SE 522417C2 SE 9803522 A SE9803522 A SE 9803522A SE 9803522 A SE9803522 A SE 9803522A SE 522417 C2 SE522417 C2 SE 522417C2
Authority
SE
Sweden
Prior art keywords
modulator
waveguide
absorption
waveguide core
electro
Prior art date
Application number
SE9803522A
Other languages
English (en)
Swedish (sv)
Other versions
SE9803522D0 (sv
SE9803522L (sv
Inventor
Lennart Lundqvist
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9803522A priority Critical patent/SE522417C2/sv
Publication of SE9803522D0 publication Critical patent/SE9803522D0/xx
Priority to TW087117609A priority patent/TW418541B/zh
Priority to CA002346654A priority patent/CA2346654A1/fr
Priority to CNB99814164XA priority patent/CN1149425C/zh
Priority to KR1020017004688A priority patent/KR100630514B1/ko
Priority to PCT/SE1999/001807 priority patent/WO2000022477A1/fr
Priority to AU14225/00A priority patent/AU1422500A/en
Priority to JP2000576316A priority patent/JP2002527793A/ja
Priority to EP99970475A priority patent/EP1121621A1/fr
Priority to US09/418,369 priority patent/US6332048B1/en
Publication of SE9803522L publication Critical patent/SE9803522L/xx
Priority to HK02104784.0A priority patent/HK1043203B/zh
Publication of SE522417C2 publication Critical patent/SE522417C2/sv

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
SE9803522A 1998-10-15 1998-10-15 Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator SE522417C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9803522A SE522417C2 (sv) 1998-10-15 1998-10-15 Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator
TW087117609A TW418541B (en) 1998-10-15 1998-10-23 Modulator and method for manufacturing of such a modulator
EP99970475A EP1121621A1 (fr) 1998-10-15 1999-10-08 Modulateur d'electro-absorption et son procede de fabrication
KR1020017004688A KR100630514B1 (ko) 1998-10-15 1999-10-08 전기 흡수 변조기 및 그러한 변조기를 제조하는 방법
CNB99814164XA CN1149425C (zh) 1998-10-15 1999-10-08 电吸附调制器及制造该调制器的方法
CA002346654A CA2346654A1 (fr) 1998-10-15 1999-10-08 Modulateur d'electro-absorption et son procede de fabrication
PCT/SE1999/001807 WO2000022477A1 (fr) 1998-10-15 1999-10-08 Modulateur d'electro-absorption et son procede de fabrication
AU14225/00A AU1422500A (en) 1998-10-15 1999-10-08 Electro-absorption modulator and method for manufacturing of such a modulator
JP2000576316A JP2002527793A (ja) 1998-10-15 1999-10-08 電界効果光吸収変調器とその製造法
US09/418,369 US6332048B1 (en) 1998-10-15 1999-10-14 Modulator and method for manufacturing of such a modulator
HK02104784.0A HK1043203B (zh) 1998-10-15 2002-06-27 電吸附調制器及製造該調制器的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9803522A SE522417C2 (sv) 1998-10-15 1998-10-15 Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator

Publications (3)

Publication Number Publication Date
SE9803522D0 SE9803522D0 (sv) 1998-10-15
SE9803522L SE9803522L (sv) 2000-04-16
SE522417C2 true SE522417C2 (sv) 2004-02-10

Family

ID=20412962

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9803522A SE522417C2 (sv) 1998-10-15 1998-10-15 Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator

Country Status (11)

Country Link
US (1) US6332048B1 (fr)
EP (1) EP1121621A1 (fr)
JP (1) JP2002527793A (fr)
KR (1) KR100630514B1 (fr)
CN (1) CN1149425C (fr)
AU (1) AU1422500A (fr)
CA (1) CA2346654A1 (fr)
HK (1) HK1043203B (fr)
SE (1) SE522417C2 (fr)
TW (1) TW418541B (fr)
WO (1) WO2000022477A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2420882A1 (fr) * 2010-08-16 2012-02-22 Alcatel Lucent Dispositif photonique actif doté d'une distribution de support aplati photo-généré
JP2012083473A (ja) * 2010-10-08 2012-04-26 Anritsu Corp 光ゲート素子
CN102169243A (zh) * 2011-04-28 2011-08-31 中国科学院半导体研究所 亚微米波导型Ge量子阱电光调制器
JP7501819B1 (ja) 2023-04-26 2024-06-18 三菱電機株式会社 半導体光集積素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374657A1 (fr) * 1976-12-15 1978-07-13 Rivoallan Loic Dispositif electro-optique de modulation de lumiere guidee dans une couche mince
JPH06100737B2 (ja) * 1988-02-26 1994-12-12 国際電信電話株式会社 光変調素子
US4913506A (en) * 1988-02-26 1990-04-03 Kokusai Denshin Denwa Kabushiki Kaisha Optical modulation device
JPH0355514A (ja) * 1989-07-25 1991-03-11 Fujitsu Ltd 光変調器
JPH04188677A (ja) * 1990-11-19 1992-07-07 Fujitsu Ltd 吸収型光変調器
GB9318666D0 (en) * 1993-09-09 1993-10-27 Northern Telecom Ltd Electro-absorption optical modulators
JPH0837341A (ja) * 1994-07-22 1996-02-06 Hitachi Ltd 半導体光集積素子およびその製造方法
JP2809124B2 (ja) * 1995-02-09 1998-10-08 日本電気株式会社 光半導体集積素子およびその製造方法
FR2730821B1 (fr) * 1995-02-22 1997-04-30 Alcatel Optronics Guide optique segmente pouvant notamment etre inclus dans un dispositif semiconducteur
JP2955986B2 (ja) * 1996-05-22 1999-10-04 日本電気株式会社 半導体光変調器及びその製造方法
JP3196958B2 (ja) * 1996-08-22 2001-08-06 日本電信電話株式会社 変調器集積半導体レーザ
JPH10163568A (ja) * 1996-12-03 1998-06-19 Mitsubishi Electric Corp 変調器集積半導体レーザ
JP2967737B2 (ja) * 1996-12-05 1999-10-25 日本電気株式会社 光半導体装置とその製造方法
JP3655079B2 (ja) * 1997-01-31 2005-06-02 株式会社東芝 光半導体素子
JPH10256669A (ja) * 1997-03-14 1998-09-25 Mitsubishi Electric Corp 光変調器集積半導体レーザダイオード

Also Published As

Publication number Publication date
KR100630514B1 (ko) 2006-09-29
AU1422500A (en) 2000-05-01
EP1121621A1 (fr) 2001-08-08
CN1329724A (zh) 2002-01-02
CN1149425C (zh) 2004-05-12
HK1043203B (zh) 2005-02-25
SE9803522D0 (sv) 1998-10-15
KR20010080155A (ko) 2001-08-22
TW418541B (en) 2001-01-11
SE9803522L (sv) 2000-04-16
CA2346654A1 (fr) 2000-04-20
US6332048B1 (en) 2001-12-18
JP2002527793A (ja) 2002-08-27
HK1043203A1 (en) 2002-09-06
WO2000022477A1 (fr) 2000-04-20

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