SE504916C2 - Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt - Google Patents
Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontaktInfo
- Publication number
- SE504916C2 SE504916C2 SE9500152A SE9500152A SE504916C2 SE 504916 C2 SE504916 C2 SE 504916C2 SE 9500152 A SE9500152 A SE 9500152A SE 9500152 A SE9500152 A SE 9500152A SE 504916 C2 SE504916 C2 SE 504916C2
- Authority
- SE
- Sweden
- Prior art keywords
- ohmic contact
- layers
- layer
- deposited
- aluminum
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010936 titanium Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 8
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 10
- 238000005245 sintering Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002000 scavenging effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9500152A SE504916C2 (sv) | 1995-01-18 | 1995-01-18 | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
| EP96901172A EP0804802B1 (en) | 1995-01-18 | 1996-01-17 | A method of producing an ohmic contact for a semiconductor device |
| PCT/SE1996/000035 WO1996022611A1 (en) | 1995-01-18 | 1996-01-17 | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
| KR1019970704752A KR100406247B1 (ko) | 1995-01-18 | 1996-01-17 | 옴접촉체를제조하는방법및이러한옴접촉체를구비한반도체소자 |
| AU44995/96A AU4499596A (en) | 1995-01-18 | 1996-01-17 | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
| DE69613674T DE69613674T2 (de) | 1995-01-18 | 1996-01-17 | Verfahren zur herstellung eines ohmschen kontakts für eine halbleitervorrichtung |
| ES96901172T ES2160799T3 (es) | 1995-01-18 | 1996-01-17 | Procedimiento de fabricacion de un contacto ohmico para un dispositivo semiconductor. |
| JP52220196A JP3930561B2 (ja) | 1995-01-18 | 1996-01-17 | オーム接触体およびこのようなオーム接触体を備えた半導体デバイスを製造する方法 |
| CA002210222A CA2210222A1 (en) | 1995-01-18 | 1996-01-17 | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
| CN96191499A CN1088256C (zh) | 1995-01-18 | 1996-01-17 | 产生欧姆接触及制造设有该种欧姆接触的半导体器件的方法 |
| US08/875,038 US5877077A (en) | 1995-01-18 | 1996-01-17 | Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
| FI973555A FI973555A0 (fi) | 1995-01-18 | 1997-08-29 | Menetelmä ohmisen kontaktin tuottamiseksi sekä tällaisella ohmisella kontaktilla varustettu puolijohdeväline |
| HK98109120A HK1008264A1 (en) | 1995-01-18 | 1998-07-14 | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
| US09/151,277 US6043513A (en) | 1995-01-18 | 1998-09-11 | Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9500152A SE504916C2 (sv) | 1995-01-18 | 1995-01-18 | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9500152D0 SE9500152D0 (sv) | 1995-01-18 |
| SE9500152L SE9500152L (sv) | 1996-07-19 |
| SE504916C2 true SE504916C2 (sv) | 1997-05-26 |
Family
ID=20396858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9500152A SE504916C2 (sv) | 1995-01-18 | 1995-01-18 | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
Country Status (13)
| Country | Link |
|---|---|
| US (2) | US5877077A (zh) |
| EP (1) | EP0804802B1 (zh) |
| JP (1) | JP3930561B2 (zh) |
| KR (1) | KR100406247B1 (zh) |
| CN (1) | CN1088256C (zh) |
| AU (1) | AU4499596A (zh) |
| CA (1) | CA2210222A1 (zh) |
| DE (1) | DE69613674T2 (zh) |
| ES (1) | ES2160799T3 (zh) |
| FI (1) | FI973555A0 (zh) |
| HK (1) | HK1008264A1 (zh) |
| SE (1) | SE504916C2 (zh) |
| WO (1) | WO1996022611A1 (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
| US6599644B1 (en) | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
| JP4545975B2 (ja) * | 2001-03-27 | 2010-09-15 | 日本特殊陶業株式会社 | 炭化珪素半導体用電極の製造方法、及び炭化珪素半導体用電極を備える炭化珪素半導体素子の製造方法 |
| US7297626B1 (en) | 2001-08-27 | 2007-11-20 | United States Of America As Represented By The Secretary Of The Army | Process for nickel silicide Ohmic contacts to n-SiC |
| JP4036075B2 (ja) * | 2002-10-29 | 2008-01-23 | 豊田合成株式会社 | ｐ型ＳｉＣ用電極の製造方法 |
| US6747291B1 (en) | 2003-01-10 | 2004-06-08 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on p-type silicon carbide using carbon films |
| US6815323B1 (en) | 2003-01-10 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on n-type silicon carbide using carbon films |
| US20060006393A1 (en) * | 2004-07-06 | 2006-01-12 | Ward Allan Iii | Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices |
| JP5477286B2 (ja) * | 2008-04-15 | 2014-04-23 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
| JP5449786B2 (ja) * | 2009-01-15 | 2014-03-19 | 昭和電工株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
| JP4858791B2 (ja) * | 2009-05-22 | 2012-01-18 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
| CN102227812A (zh) * | 2009-10-05 | 2011-10-26 | 住友电气工业株式会社 | 半导体器件 |
| JP5581642B2 (ja) * | 2009-10-05 | 2014-09-03 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| CN102859661B (zh) * | 2010-04-14 | 2015-12-16 | 住友电气工业株式会社 | 碳化硅半导体器件及其制造方法 |
| FR2974944B1 (fr) | 2011-05-02 | 2013-06-14 | Commissariat Energie Atomique | Procédé de formation d'une fracture dans un matériau |
| US9099578B2 (en) * | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
| JP2014038899A (ja) * | 2012-08-13 | 2014-02-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
| JP5949305B2 (ja) | 2012-08-13 | 2016-07-06 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| CN102931054B (zh) * | 2012-08-21 | 2014-12-17 | 中国科学院微电子研究所 | 一种实现P型SiC材料低温欧姆合金退火的方法 |
| CN102931224A (zh) * | 2012-08-21 | 2013-02-13 | 中国科学院微电子研究所 | 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法 |
| US9397181B2 (en) | 2014-03-19 | 2016-07-19 | International Business Machines Corporation | Diffusion-controlled oxygen depletion of semiconductor contact interface |
| US9443772B2 (en) | 2014-03-19 | 2016-09-13 | Globalfoundries Inc. | Diffusion-controlled semiconductor contact creation |
| US10269714B2 (en) | 2016-09-06 | 2019-04-23 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3492719A (en) * | 1967-03-10 | 1970-02-03 | Westinghouse Electric Corp | Evaporated metal contacts for the fabrication of silicon carbide devices |
| JPS6271271A (ja) * | 1985-09-24 | 1987-04-01 | Sharp Corp | 炭化珪素半導体の電極構造 |
| US5319220A (en) * | 1988-01-20 | 1994-06-07 | Sharp Kabushiki Kaisha | Silicon carbide semiconductor device |
| CA2008176A1 (en) * | 1989-01-25 | 1990-07-25 | John W. Palmour | Silicon carbide schottky diode and method of making same |
| JP2509713B2 (ja) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | 炭化珪素半導体装置およびその製造方法 |
| US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
| US5561829A (en) * | 1993-07-22 | 1996-10-01 | Aluminum Company Of America | Method of producing structural metal matrix composite products from a blend of powders |
| US5539217A (en) * | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
| JP3085078B2 (ja) * | 1994-03-04 | 2000-09-04 | 富士電機株式会社 | 炭化けい素電子デバイスの製造方法 |
| US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
-
1995
- 1995-01-18 SE SE9500152A patent/SE504916C2/sv not_active IP Right Cessation
-
1996
- 1996-01-17 ES ES96901172T patent/ES2160799T3/es not_active Expired - Lifetime
- 1996-01-17 CN CN96191499A patent/CN1088256C/zh not_active Expired - Lifetime
- 1996-01-17 KR KR1019970704752A patent/KR100406247B1/ko not_active IP Right Cessation
- 1996-01-17 CA CA002210222A patent/CA2210222A1/en not_active Abandoned
- 1996-01-17 WO PCT/SE1996/000035 patent/WO1996022611A1/en active IP Right Grant
- 1996-01-17 AU AU44995/96A patent/AU4499596A/en not_active Abandoned
- 1996-01-17 US US08/875,038 patent/US5877077A/en not_active Expired - Lifetime
- 1996-01-17 EP EP96901172A patent/EP0804802B1/en not_active Expired - Lifetime
- 1996-01-17 JP JP52220196A patent/JP3930561B2/ja not_active Expired - Lifetime
- 1996-01-17 DE DE69613674T patent/DE69613674T2/de not_active Expired - Lifetime
-
1997
- 1997-08-29 FI FI973555A patent/FI973555A0/fi active IP Right Revival
-
1998
- 1998-07-14 HK HK98109120A patent/HK1008264A1/xx not_active IP Right Cessation
- 1998-09-11 US US09/151,277 patent/US6043513A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69613674D1 (de) | 2001-08-09 |
| US5877077A (en) | 1999-03-02 |
| SE9500152D0 (sv) | 1995-01-18 |
| EP0804802A1 (en) | 1997-11-05 |
| KR100406247B1 (ko) | 2004-03-18 |
| ES2160799T3 (es) | 2001-11-16 |
| CN1172551A (zh) | 1998-02-04 |
| DE69613674T2 (de) | 2002-04-25 |
| CA2210222A1 (en) | 1996-07-25 |
| AU4499596A (en) | 1996-08-07 |
| SE9500152L (sv) | 1996-07-19 |
| WO1996022611A1 (en) | 1996-07-25 |
| JPH10512716A (ja) | 1998-12-02 |
| EP0804802B1 (en) | 2001-07-04 |
| HK1008264A1 (en) | 1999-05-07 |
| JP3930561B2 (ja) | 2007-06-13 |
| FI973555A (fi) | 1997-08-29 |
| US6043513A (en) | 2000-03-28 |
| FI973555A0 (fi) | 1997-08-29 |
| CN1088256C (zh) | 2002-07-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |