SE500975C2 - Sätt att framställa ett isolerande dielektriskt skikt av kiseldioxid på ett kiselskikt genom utfällning av ett amorft kiselskikt på ett substrat vid en temperatur som är lägre än ca 580 grader C - Google Patents

Sätt att framställa ett isolerande dielektriskt skikt av kiseldioxid på ett kiselskikt genom utfällning av ett amorft kiselskikt på ett substrat vid en temperatur som är lägre än ca 580 grader C

Info

Publication number
SE500975C2
SE500975C2 SE8306071A SE8306071A SE500975C2 SE 500975 C2 SE500975 C2 SE 500975C2 SE 8306071 A SE8306071 A SE 8306071A SE 8306071 A SE8306071 A SE 8306071A SE 500975 C2 SE500975 C2 SE 500975C2
Authority
SE
Sweden
Prior art keywords
layer
silicon layer
silicon
amorphous silicon
silicon dioxide
Prior art date
Application number
SE8306071A
Other languages
English (en)
Swedish (sv)
Other versions
SE8306071L (sv
SE8306071D0 (sv
Inventor
Lorenzo Faraone
Robert Daniel Vibronek
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Publication of SE8306071D0 publication Critical patent/SE8306071D0/xx
Publication of SE8306071L publication Critical patent/SE8306071L/
Publication of SE500975C2 publication Critical patent/SE500975C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors

Landscapes

  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
SE8306071A 1982-11-12 1983-11-04 Sätt att framställa ett isolerande dielektriskt skikt av kiseldioxid på ett kiselskikt genom utfällning av ett amorft kiselskikt på ett substrat vid en temperatur som är lägre än ca 580 grader C SE500975C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44137282A 1982-11-12 1982-11-12

Publications (3)

Publication Number Publication Date
SE8306071D0 SE8306071D0 (sv) 1983-11-04
SE8306071L SE8306071L (sv) 1984-05-13
SE500975C2 true SE500975C2 (sv) 1994-10-10

Family

ID=23752622

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8306071A SE500975C2 (sv) 1982-11-12 1983-11-04 Sätt att framställa ett isolerande dielektriskt skikt av kiseldioxid på ett kiselskikt genom utfällning av ett amorft kiselskikt på ett substrat vid en temperatur som är lägre än ca 580 grader C

Country Status (6)

Country Link
JP (1) JPH06101466B2 (enFirst)
DE (1) DE3340583A1 (enFirst)
FR (1) FR2536208B1 (enFirst)
GB (1) GB2131407B (enFirst)
IT (1) IT1171798B (enFirst)
SE (1) SE500975C2 (enFirst)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
US4874716A (en) * 1986-04-01 1989-10-17 Texas Instrument Incorporated Process for fabricating integrated circuit structure with extremely smooth polysilicone dielectric interface
EP0281233A1 (en) * 1987-01-30 1988-09-07 AT&T Corp. Improved formation of dielectric on deposited silicon
US5851871A (en) * 1987-12-23 1998-12-22 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing integrated capacitors in MOS technology
EP0598410B1 (en) * 1989-02-14 2001-05-23 Seiko Epson Corporation A method of manufacturing a semiconductor device
EP0545585A3 (en) * 1991-12-03 1996-11-06 American Telephone & Telegraph Integrated circuit fabrication comprising a locos process
US5665620A (en) * 1994-08-01 1997-09-09 Motorola, Inc. Method for forming concurrent top oxides using reoxidized silicon in an EPROM
US5712177A (en) * 1994-08-01 1998-01-27 Motorola, Inc. Method for forming a reverse dielectric stack
US6635110B1 (en) * 1999-06-25 2003-10-21 Massachusetts Institute Of Technology Cyclic thermal anneal for dislocation reduction
CN112992672B (zh) * 2019-12-16 2022-10-14 山东有研半导体材料有限公司 一种硅基二氧化硅背封薄膜的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
JPS5910060B2 (ja) * 1976-03-01 1984-03-06 株式会社日立製作所 半導体装置の製造方法
IT1089298B (it) * 1977-01-17 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS55115341A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5676537A (en) * 1979-11-27 1981-06-24 Fujitsu Ltd Manufacture of semiconductor device
US4479831A (en) * 1980-09-15 1984-10-30 Burroughs Corporation Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor

Also Published As

Publication number Publication date
DE3340583A1 (de) 1984-05-17
SE8306071L (sv) 1984-05-13
FR2536208B1 (fr) 1987-03-20
JPH06101466B2 (ja) 1994-12-12
IT1171798B (it) 1987-06-10
SE8306071D0 (sv) 1983-11-04
IT8323691A0 (it) 1983-11-11
JPS59103347A (ja) 1984-06-14
DE3340583C2 (enFirst) 1993-04-29
GB8329380D0 (en) 1983-12-07
GB2131407A (en) 1984-06-20
GB2131407B (en) 1987-02-04
FR2536208A1 (fr) 1984-05-18

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