SE500463C2 - Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan - Google Patents

Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan

Info

Publication number
SE500463C2
SE500463C2 SE8306070A SE8306070A SE500463C2 SE 500463 C2 SE500463 C2 SE 500463C2 SE 8306070 A SE8306070 A SE 8306070A SE 8306070 A SE8306070 A SE 8306070A SE 500463 C2 SE500463 C2 SE 500463C2
Authority
SE
Sweden
Prior art keywords
layers
silicon
layer
films
polycrystalline silicon
Prior art date
Application number
SE8306070A
Other languages
English (en)
Swedish (sv)
Other versions
SE8306070D0 (sv
SE8306070L (sv
Inventor
Alois Erhard Widmer
Gunther Harbeke
Liselotte Krausbauer
Edgar Felix Steigmeier
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8306070D0 publication Critical patent/SE8306070D0/xx
Publication of SE8306070L publication Critical patent/SE8306070L/
Publication of SE500463C2 publication Critical patent/SE500463C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
SE8306070A 1982-11-12 1983-11-04 Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan SE500463C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44137182A 1982-11-12 1982-11-12

Publications (3)

Publication Number Publication Date
SE8306070D0 SE8306070D0 (sv) 1983-11-04
SE8306070L SE8306070L (sv) 1984-05-13
SE500463C2 true SE500463C2 (sv) 1994-06-27

Family

ID=23752618

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8306070A SE500463C2 (sv) 1982-11-12 1983-11-04 Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan

Country Status (6)

Country Link
JP (1) JPH0652715B2 (enExample)
DE (1) DE3340584A1 (enExample)
FR (1) FR2536210B1 (enExample)
GB (1) GB2130009B (enExample)
IT (1) IT1171797B (enExample)
SE (1) SE500463C2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
US4789883A (en) * 1985-12-17 1988-12-06 Advanced Micro Devices, Inc. Integrated circuit structure having gate electrode and underlying oxide and method of making same
EP0253014B1 (en) * 1986-07-18 1990-04-11 Nippondenso Co., Ltd. Method of manufacturing a monvolatile semiconductor memory apparatus with writing and erasing capability
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
JP2690917B2 (ja) * 1987-12-07 1997-12-17 株式会社日立製作所 薄膜形成方法及び半導体装置の製造方法
FR2627012B1 (fr) * 1988-02-10 1990-06-01 France Etat Procede de depot d'une couche polycristalline a gros grains, couche obtenue et transistor pourvu d'une telle couche
DE69030864T2 (de) * 1989-12-01 1997-11-13 Texas Instruments Inc Verfahren der in-situ-Dotierung von abgeschiedenem Silizium
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
JP2508948B2 (ja) * 1991-06-21 1996-06-19 日本電気株式会社 半導体装置の製造方法
GB2293691B (en) * 1991-09-07 1996-06-19 Samsung Electronics Co Ltd Semiconductor memory devices
KR960026821A (ko) * 1994-12-20 1996-07-22 김주용 캐패시터 제조방법
WO1996039718A1 (en) * 1995-06-06 1996-12-12 Asahi Kasei Microsystems Co., Ltd. Semiconductor device and method of production thereof
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558815B2 (enExample) * 1973-06-29 1980-03-06
DE2536174C3 (de) * 1975-08-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente
JPS5249782A (en) * 1975-10-20 1977-04-21 Fujitsu Ltd Process for production of semiconductor device
US4179528A (en) * 1977-05-18 1979-12-18 Eastman Kodak Company Method of making silicon device with uniformly thick polysilicon
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor

Also Published As

Publication number Publication date
JPS59100561A (ja) 1984-06-09
GB2130009B (en) 1986-04-03
JPH0652715B2 (ja) 1994-07-06
FR2536210A1 (fr) 1984-05-18
DE3340584A1 (de) 1984-05-17
SE8306070D0 (sv) 1983-11-04
DE3340584C2 (enExample) 1993-02-11
SE8306070L (sv) 1984-05-13
GB8329381D0 (en) 1983-12-07
IT8323690A0 (it) 1983-11-11
GB2130009A (en) 1984-05-23
IT1171797B (it) 1987-06-10
FR2536210B1 (fr) 1986-03-28

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