SE500463C2 - Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan - Google Patents

Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan

Info

Publication number
SE500463C2
SE500463C2 SE8306070A SE8306070A SE500463C2 SE 500463 C2 SE500463 C2 SE 500463C2 SE 8306070 A SE8306070 A SE 8306070A SE 8306070 A SE8306070 A SE 8306070A SE 500463 C2 SE500463 C2 SE 500463C2
Authority
SE
Sweden
Prior art keywords
layers
layer
silicon
films
polycrystalline
Prior art date
Application number
SE8306070A
Other languages
English (en)
Swedish (sv)
Other versions
SE8306070D0 (sv
SE8306070L (sv
Inventor
Alois Erhard Widmer
Gunther Harbeke
Liselotte Krausbauer
Edgar Felix Steigmeier
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8306070D0 publication Critical patent/SE8306070D0/xx
Publication of SE8306070L publication Critical patent/SE8306070L/
Publication of SE500463C2 publication Critical patent/SE500463C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
SE8306070A 1982-11-12 1983-11-04 Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan SE500463C2 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44137182A 1982-11-12 1982-11-12

Publications (3)

Publication Number Publication Date
SE8306070D0 SE8306070D0 (sv) 1983-11-04
SE8306070L SE8306070L (sv) 1984-05-13
SE500463C2 true SE500463C2 (sv) 1994-06-27

Family

ID=23752618

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8306070A SE500463C2 (sv) 1982-11-12 1983-11-04 Halvledarorgan innehållande ett eller flera skikt av polykristallin kisel med ett skrovlighetseffektivvärde som uppgår till högst ca 20 Å och förfarande för framställning av ett sådant halvledarorgan

Country Status (6)

Country Link
JP (1) JPH0652715B2 (enrdf_load_stackoverflow)
DE (1) DE3340584A1 (enrdf_load_stackoverflow)
FR (1) FR2536210B1 (enrdf_load_stackoverflow)
GB (1) GB2130009B (enrdf_load_stackoverflow)
IT (1) IT1171797B (enrdf_load_stackoverflow)
SE (1) SE500463C2 (enrdf_load_stackoverflow)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
US4789883A (en) * 1985-12-17 1988-12-06 Advanced Micro Devices, Inc. Integrated circuit structure having gate electrode and underlying oxide and method of making same
DE3670403D1 (de) * 1986-07-18 1990-05-17 Nippon Denso Co Verfahren zur herstellung einer nichtfluechtigen halbleiterspeicheranordnung mit moeglichkeit zum einschreiben und loeschen.
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
JP2690917B2 (ja) * 1987-12-07 1997-12-17 株式会社日立製作所 薄膜形成方法及び半導体装置の製造方法
FR2627012B1 (fr) * 1988-02-10 1990-06-01 France Etat Procede de depot d'une couche polycristalline a gros grains, couche obtenue et transistor pourvu d'une telle couche
DE69030864T2 (de) * 1989-12-01 1997-11-13 Texas Instruments Inc Verfahren der in-situ-Dotierung von abgeschiedenem Silizium
US5366917A (en) * 1990-03-20 1994-11-22 Nec Corporation Method for fabricating polycrystalline silicon having micro roughness on the surface
JP2508948B2 (ja) * 1991-06-21 1996-06-19 日本電気株式会社 半導体装置の製造方法
GB2293691B (en) * 1991-09-07 1996-06-19 Samsung Electronics Co Ltd Semiconductor memory devices
KR960026821A (ko) * 1994-12-20 1996-07-22 김주용 캐패시터 제조방법
JP4003888B2 (ja) * 1995-06-06 2007-11-07 旭化成エレクトロニクス株式会社 半導体装置およびその製造方法
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6970644B2 (en) 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558815B2 (enrdf_load_stackoverflow) * 1973-06-29 1980-03-06
DE2536174C3 (de) * 1975-08-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente
JPS5249782A (en) * 1975-10-20 1977-04-21 Fujitsu Ltd Process for production of semiconductor device
US4179528A (en) * 1977-05-18 1979-12-18 Eastman Kodak Company Method of making silicon device with uniformly thick polysilicon
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
JPS5423386A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Manufacture of semiconductor device
JPS5617083A (en) * 1979-07-20 1981-02-18 Hitachi Ltd Semiconductor device and its manufacture
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor

Also Published As

Publication number Publication date
DE3340584C2 (enrdf_load_stackoverflow) 1993-02-11
JPS59100561A (ja) 1984-06-09
IT8323690A0 (it) 1983-11-11
SE8306070D0 (sv) 1983-11-04
SE8306070L (sv) 1984-05-13
JPH0652715B2 (ja) 1994-07-06
DE3340584A1 (de) 1984-05-17
GB2130009A (en) 1984-05-23
FR2536210A1 (fr) 1984-05-18
IT1171797B (it) 1987-06-10
GB8329381D0 (en) 1983-12-07
FR2536210B1 (fr) 1986-03-28
GB2130009B (en) 1986-04-03

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