SE436670B - Halvledarlaser - Google Patents

Halvledarlaser

Info

Publication number
SE436670B
SE436670B SE7905635A SE7905635A SE436670B SE 436670 B SE436670 B SE 436670B SE 7905635 A SE7905635 A SE 7905635A SE 7905635 A SE7905635 A SE 7905635A SE 436670 B SE436670 B SE 436670B
Authority
SE
Sweden
Prior art keywords
epitaxial layer
layer
substrate
thickness
semiconductor laser
Prior art date
Application number
SE7905635A
Other languages
English (en)
Swedish (sv)
Other versions
SE7905635L (sv
Inventor
D Botez
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/004,143 external-priority patent/US4215319A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7905635L publication Critical patent/SE7905635L/xx
Publication of SE436670B publication Critical patent/SE436670B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
SE7905635A 1978-07-31 1979-06-27 Halvledarlaser SE436670B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92977678A 1978-07-31 1978-07-31
US06/004,143 US4215319A (en) 1979-01-17 1979-01-17 Single filament semiconductor laser

Publications (2)

Publication Number Publication Date
SE7905635L SE7905635L (sv) 1980-02-01
SE436670B true SE436670B (sv) 1985-01-14

Family

ID=26672669

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7905635A SE436670B (sv) 1978-07-31 1979-06-27 Halvledarlaser

Country Status (4)

Country Link
DE (1) DE2929719C2 (de)
GB (1) GB2027261B (de)
IT (1) IT1121922B (de)
SE (1) SE436670B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2062949B (en) * 1979-10-12 1983-08-10 Rca Corp Single filament semiconductor laser with large emitting area
US4426701A (en) * 1981-12-23 1984-01-17 Rca Corporation Constricted double heterostructure semiconductor laser
GB2129211B (en) * 1982-10-21 1987-01-14 Rca Corp Semiconductor laser and a method of making same
FR2535121B1 (fr) * 1982-10-25 1989-01-06 Rca Corp Laser a semi-conducteur et son procede de fabrication
DE3240700C2 (de) * 1982-11-04 1994-07-07 Rca Corp Verfahren zum Herstellen eines Halbleiterlasers und danach hergestellter Halbleiterlaser
US4937836A (en) * 1983-11-30 1990-06-26 Sharp Kabushiki Kaisha Semiconductor laser device and production method therefor
DE4240539C2 (de) * 1992-01-21 1997-07-03 Mitsubishi Electric Corp Verfahren zur Herstellung eines Halbleiterlasers

Also Published As

Publication number Publication date
IT1121922B (it) 1986-04-23
IT7923845A0 (it) 1979-06-25
DE2929719C2 (de) 1982-08-05
GB2027261A (en) 1980-02-13
GB2027261B (en) 1982-10-06
SE7905635L (sv) 1980-02-01
DE2929719A1 (de) 1980-02-14

Similar Documents

Publication Publication Date Title
US4215319A (en) Single filament semiconductor laser
US4347486A (en) Single filament semiconductor laser with large emitting area
GB1499967A (en) Injection lasers
SE436670B (sv) Halvledarlaser
JP2752423B2 (ja) 化合物半導体へのＺｎ拡散方法
CA1192977A (en) Constricted double heterostructure semiconductor laser
EP0212977A2 (de) Halbleiterlaservorrichtung vom vergrabenen Typ
CA1253608A (en) Phase-locked semiconductor laser array and a method of making same
GB2062949A (en) Single filament semiconductor laser with large emitting area
US4642143A (en) Method of making a double heterostructure laser
CA1226659A (en) Double heterostructure laser and a method of making same
JP2002261390A (ja) 半導体レーザ及びその製造方法
US4632709A (en) Process for preventing melt-back in the production of aluminum-containing laser devices
JPS6430287A (en) Semiconductor laser device and manufacture thereof
JPH10510102A (ja) チャネル内のリッジ状レーザ
KR900006588B1 (ko) 레이저 다이오드의 제조방법
JPS61204993A (ja) 半導体発光装置
JPS5834988A (ja) 半導体レ−ザの製造方法
JPS6351558B2 (de)
JPS6122478B2 (de)
KR940008578B1 (ko) 반도체 레이저 다이오드의 단면 보호막 형성방법
Botez Single filament semiconductor laser
JPS60198812A (ja) 半導体発光素子の製造方法
JPS5853876A (ja) 半導体レ−ザの製造方法
JPH02253683A (ja) ＡｌＧａＡｓレーザ

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7905635-4

Effective date: 19880318

Format of ref document f/p: F