IT1121922B - Laser a semiconduttore,ad emissione di un singolo raggio di luce - Google Patents

Laser a semiconduttore,ad emissione di un singolo raggio di luce

Info

Publication number
IT1121922B
IT1121922B IT23845/79A IT2384579A IT1121922B IT 1121922 B IT1121922 B IT 1121922B IT 23845/79 A IT23845/79 A IT 23845/79A IT 2384579 A IT2384579 A IT 2384579A IT 1121922 B IT1121922 B IT 1121922B
Authority
IT
Italy
Prior art keywords
emissing
light
semiconductor laser
single beam
laser
Prior art date
Application number
IT23845/79A
Other languages
English (en)
Italian (it)
Other versions
IT7923845A0 (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/004,143 external-priority patent/US4215319A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7923845A0 publication Critical patent/IT7923845A0/it
Application granted granted Critical
Publication of IT1121922B publication Critical patent/IT1121922B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
IT23845/79A 1978-07-31 1979-06-25 Laser a semiconduttore,ad emissione di un singolo raggio di luce IT1121922B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US92977678A 1978-07-31 1978-07-31
US06/004,143 US4215319A (en) 1979-01-17 1979-01-17 Single filament semiconductor laser

Publications (2)

Publication Number Publication Date
IT7923845A0 IT7923845A0 (it) 1979-06-25
IT1121922B true IT1121922B (it) 1986-04-23

Family

ID=26672669

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23845/79A IT1121922B (it) 1978-07-31 1979-06-25 Laser a semiconduttore,ad emissione di un singolo raggio di luce

Country Status (4)

Country Link
DE (1) DE2929719C2 (de)
GB (1) GB2027261B (de)
IT (1) IT1121922B (de)
SE (1) SE436670B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2062949B (en) * 1979-10-12 1983-08-10 Rca Corp Single filament semiconductor laser with large emitting area
US4426701A (en) * 1981-12-23 1984-01-17 Rca Corporation Constricted double heterostructure semiconductor laser
GB2129211B (en) * 1982-10-21 1987-01-14 Rca Corp Semiconductor laser and a method of making same
FR2535121B1 (fr) * 1982-10-25 1989-01-06 Rca Corp Laser a semi-conducteur et son procede de fabrication
DE3240700C2 (de) * 1982-11-04 1994-07-07 Rca Corp Verfahren zum Herstellen eines Halbleiterlasers und danach hergestellter Halbleiterlaser
EP0143460B1 (de) * 1983-11-30 1991-03-13 Sharp Kabushiki Kaisha Halbleiterlaser-Vorrichtung und Verfahren zu deren Herstellung
DE4240539C2 (de) * 1992-01-21 1997-07-03 Mitsubishi Electric Corp Verfahren zur Herstellung eines Halbleiterlasers

Also Published As

Publication number Publication date
SE436670B (sv) 1985-01-14
GB2027261B (en) 1982-10-06
DE2929719A1 (de) 1980-02-14
DE2929719C2 (de) 1982-08-05
SE7905635L (sv) 1980-02-01
IT7923845A0 (it) 1979-06-25
GB2027261A (en) 1980-02-13

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