SE436667B - Minnescell med flytande styre vars kapacitans er storre till emitter en till kollektor - Google Patents
Minnescell med flytande styre vars kapacitans er storre till emitter en till kollektorInfo
- Publication number
- SE436667B SE436667B SE7907382A SE7907382A SE436667B SE 436667 B SE436667 B SE 436667B SE 7907382 A SE7907382 A SE 7907382A SE 7907382 A SE7907382 A SE 7907382A SE 436667 B SE436667 B SE 436667B
- Authority
- SE
- Sweden
- Prior art keywords
- region
- emitter
- collector
- regions
- volts
- Prior art date
Links
- 239000007788 liquid Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims 3
- 230000005669 field effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000951490 Hylocharis chrysura Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 210000004706 scrotum Anatomy 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/03—Injection moulding apparatus
- B29C45/07—Injection moulding apparatus using movable injection units
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/948,507 US4185319A (en) | 1978-10-04 | 1978-10-04 | Non-volatile memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7907382L SE7907382L (sv) | 1980-04-05 |
| SE436667B true SE436667B (sv) | 1985-01-14 |
Family
ID=25487925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7907382A SE436667B (sv) | 1978-10-04 | 1979-09-05 | Minnescell med flytande styre vars kapacitans er storre till emitter en till kollektor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4185319A (ru) |
| JP (2) | JPS5552274A (ru) |
| DE (1) | DE2939300B2 (ru) |
| FR (1) | FR2438318B1 (ru) |
| GB (1) | GB2033656B (ru) |
| IT (1) | IT1123266B (ru) |
| SE (1) | SE436667B (ru) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4302765A (en) * | 1978-09-05 | 1981-11-24 | Rockwell International Corporation | Geometry for fabricating enhancement and depletion-type, pull-up field effect transistor devices |
| JPS5742161A (en) * | 1980-08-28 | 1982-03-09 | Fujitsu Ltd | Semiconductor and production thereof |
| US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
| US4486859A (en) * | 1982-02-19 | 1984-12-04 | International Business Machines Corporation | Electrically alterable read-only storage cell and method of operating same |
| US4590503A (en) * | 1983-07-21 | 1986-05-20 | Honeywell Inc. | Electrically erasable programmable read only memory |
| US4571704A (en) * | 1984-02-17 | 1986-02-18 | Hughes Aircraft Company | Nonvolatile latch |
| US4736342A (en) * | 1985-11-15 | 1988-04-05 | Texas Instruments Incorporated | Method of forming a field plate in a high voltage array |
| US4933904A (en) * | 1985-11-29 | 1990-06-12 | General Electric Company | Dense EPROM having serially coupled floating gate transistors |
| US5017505A (en) * | 1986-07-18 | 1991-05-21 | Nippondenso Co., Ltd. | Method of making a nonvolatile semiconductor memory apparatus with a floating gate |
| US4791464A (en) * | 1987-05-12 | 1988-12-13 | General Electric Company | Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same |
| US4918498A (en) * | 1987-05-12 | 1990-04-17 | General Electric Company | Edgeless semiconductor device |
| US4864380A (en) * | 1987-05-12 | 1989-09-05 | General Electric Company | Edgeless CMOS device |
| JPH07109873B2 (ja) * | 1988-07-05 | 1995-11-22 | 株式会社東芝 | 半導体記憶装置 |
| US5256370B1 (en) * | 1992-05-04 | 1996-09-03 | Indium Corp America | Lead-free alloy containing tin silver and indium |
| EP0621603B1 (en) * | 1993-04-22 | 1999-02-10 | STMicroelectronics S.r.l. | Method and circuit for tunnel-effect programming of floating-gate MOSFETS |
| US5510630A (en) * | 1993-10-18 | 1996-04-23 | Westinghouse Electric Corporation | Non-volatile random access memory cell constructed of silicon carbide |
| KR0137693B1 (ko) * | 1994-12-31 | 1998-06-15 | 김주용 | 셀프 부스트랩 장치 |
| US5777361A (en) * | 1996-06-03 | 1998-07-07 | Motorola, Inc. | Single gate nonvolatile memory cell and method for accessing the same |
| US7154141B2 (en) * | 2001-02-02 | 2006-12-26 | Hyundai Electronics America | Source side programming |
| FR2823363B1 (fr) | 2001-04-05 | 2003-12-12 | St Microelectronics Sa | Procede d'effacement d'une cellule-memoire de type famos, et cellule-memoire correspondante |
| WO2007081642A2 (en) * | 2005-12-21 | 2007-07-19 | Sandisk Corporation | Flash devicewith shared word lines and manufacturing methods thereof |
| US7655536B2 (en) * | 2005-12-21 | 2010-02-02 | Sandisk Corporation | Methods of forming flash devices with shared word lines |
| US7495294B2 (en) * | 2005-12-21 | 2009-02-24 | Sandisk Corporation | Flash devices with shared word lines |
| JP4789754B2 (ja) * | 2006-08-31 | 2011-10-12 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| JP2012174762A (ja) * | 2011-02-18 | 2012-09-10 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
| US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
| NL7208026A (ru) * | 1972-06-13 | 1973-12-17 | ||
| DE2445079C3 (de) * | 1974-09-20 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Speicher-Feldeffekttransistor |
| US3984822A (en) * | 1974-12-30 | 1976-10-05 | Intel Corporation | Double polycrystalline silicon gate memory device |
| DE2643931A1 (de) * | 1976-09-29 | 1978-03-30 | Siemens Ag | In integrierter technik hergestellter baustein |
| DE2643948C2 (de) * | 1976-09-29 | 1981-10-15 | Siemens AG, 1000 Berlin und 8000 München | In einer Matrix angeordnete Speicher-FETs und Verfahren zu ihrer Herstellung |
| US4063274A (en) * | 1976-12-10 | 1977-12-13 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
-
1978
- 1978-10-04 US US05/948,507 patent/US4185319A/en not_active Expired - Lifetime
-
1979
- 1979-09-05 SE SE7907382A patent/SE436667B/sv not_active IP Right Cessation
- 1979-09-20 IT IT25898/79A patent/IT1123266B/it active
- 1979-09-26 GB GB7933311A patent/GB2033656B/en not_active Expired
- 1979-09-28 DE DE2939300A patent/DE2939300B2/de active Granted
- 1979-10-03 FR FR7924661A patent/FR2438318B1/fr not_active Expired
- 1979-10-03 JP JP12845279A patent/JPS5552274A/ja active Granted
-
1982
- 1982-07-05 JP JP57117600A patent/JPS5829199A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2939300C3 (ru) | 1988-05-26 |
| DE2939300B2 (de) | 1981-07-09 |
| GB2033656A (en) | 1980-05-21 |
| DE2939300A1 (de) | 1980-08-21 |
| IT7925898A0 (it) | 1979-09-20 |
| FR2438318A1 (fr) | 1980-04-30 |
| FR2438318B1 (fr) | 1985-08-16 |
| JPS627714B2 (ru) | 1987-02-18 |
| SE7907382L (sv) | 1980-04-05 |
| IT1123266B (it) | 1986-04-30 |
| JPS5829199A (ja) | 1983-02-21 |
| US4185319A (en) | 1980-01-22 |
| JPS5552274A (en) | 1980-04-16 |
| GB2033656B (en) | 1983-08-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 7907382-1 Effective date: 19891003 Format of ref document f/p: F |