SE411815B - Halvledaranordning innefattande bl a en bipoler lateralskyddstransistor - Google Patents

Halvledaranordning innefattande bl a en bipoler lateralskyddstransistor

Info

Publication number
SE411815B
SE411815B SE7701884A SE7701884A SE411815B SE 411815 B SE411815 B SE 411815B SE 7701884 A SE7701884 A SE 7701884A SE 7701884 A SE7701884 A SE 7701884A SE 411815 B SE411815 B SE 411815B
Authority
SE
Sweden
Prior art keywords
bipoler
semiconductor device
device including
protection transistor
lateral protection
Prior art date
Application number
SE7701884A
Other languages
English (en)
Swedish (sv)
Other versions
SE7701884L (sv
Inventor
D Daub
O E H Klaver
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7701884L publication Critical patent/SE7701884L/xx
Publication of SE411815B publication Critical patent/SE411815B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
SE7701884A 1976-02-24 1977-02-21 Halvledaranordning innefattande bl a en bipoler lateralskyddstransistor SE411815B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7601843,A NL176322C (nl) 1976-02-24 1976-02-24 Halfgeleiderinrichting met beveiligingsschakeling.

Publications (2)

Publication Number Publication Date
SE7701884L SE7701884L (sv) 1977-08-25
SE411815B true SE411815B (sv) 1980-02-04

Family

ID=19825672

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7701884A SE411815B (sv) 1976-02-24 1977-02-21 Halvledaranordning innefattande bl a en bipoler lateralskyddstransistor

Country Status (11)

Country Link
US (1) US4131908A (xx)
JP (2) JPS52102689A (xx)
AU (1) AU506552B2 (xx)
CA (1) CA1078072A (xx)
CH (1) CH612794A5 (xx)
DE (1) DE2707744A1 (xx)
FR (1) FR2342557A1 (xx)
GB (1) GB1571343A (xx)
IT (1) IT1074324B (xx)
NL (1) NL176322C (xx)
SE (1) SE411815B (xx)

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JPS55102268A (en) * 1979-01-31 1980-08-05 Toshiba Corp Protecting circuit for semiconductor device
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4235011A (en) * 1979-03-28 1980-11-25 Honeywell Inc. Semiconductor apparatus
JPS5679463A (en) * 1979-12-03 1981-06-30 Matsushita Electronics Corp Semiconductor integrated circuit
JPS5696851A (en) * 1979-12-27 1981-08-05 Fujitsu Ltd Static breakdown preventive element
JPS577151A (en) * 1980-06-17 1982-01-14 Nec Corp Monolithic ic circuit
US4302792A (en) * 1980-06-26 1981-11-24 Rca Corporation Transistor protection circuit
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS5756960A (en) * 1980-09-22 1982-04-05 Hitachi Ltd Semiconductor integrated circuit device
JPS5778178A (en) * 1980-11-04 1982-05-15 Toshiba Corp Input protective circuit
JPS5780774A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
IT1150062B (it) * 1980-11-19 1986-12-10 Ates Componenti Elettron Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione
NL8100347A (nl) * 1981-01-26 1982-08-16 Philips Nv Halfgeleiderinrichting met een beveiligingsinrichting.
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
JPS58182441U (ja) * 1982-05-28 1983-12-05 三洋電機株式会社 半導体集積回路
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
JPS60767A (ja) * 1983-06-17 1985-01-05 Hitachi Ltd 半導体装置
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
JPS60117653A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体集積回路装置
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
SE455552B (sv) * 1985-02-26 1988-07-18 Asea Ab Halvledaranordning innefattande en overspenningsskyddskrets
JPS6252966A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 半導体装置の製造方法
JPH0666402B2 (ja) * 1985-12-12 1994-08-24 三菱電機株式会社 半導体集積回路装置の入力保護回路
JPH0693495B2 (ja) * 1985-12-13 1994-11-16 ロ−ム株式会社 半導体装置の保護回路
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
US4987465A (en) * 1987-01-29 1991-01-22 Advanced Micro Devices, Inc. Electro-static discharge protection device for CMOS integrated circuit inputs
US5005066A (en) * 1987-06-02 1991-04-02 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US4784966A (en) * 1987-06-02 1988-11-15 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
JPH0719879B2 (ja) * 1988-06-24 1995-03-06 日本電気株式会社 半導体集積回路装置
US4875130A (en) * 1988-07-06 1989-10-17 National Semiconductor Corporation ESD low resistance input structure
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JPH061802B2 (ja) * 1989-03-14 1994-01-05 株式会社東芝 半導体装置
US5345103A (en) * 1989-07-18 1994-09-06 Seiko Instruments Inc. Gate controlled avalanche bipolar transistor
JPH0821840B2 (ja) * 1989-12-07 1996-03-04 富士電機株式会社 パワー半導体装置のスナバ回路
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
EP0517391A1 (en) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD protection circuit
JP3019760B2 (ja) * 1995-11-15 2000-03-13 日本電気株式会社 半導体集積回路装置
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
FR3119493A1 (fr) * 2021-01-29 2022-08-05 Stmicroelectronics (Rousset) Sas Dispositif de protection contre les décharges électrostatiques

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US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
US3918080A (en) * 1968-06-21 1975-11-04 Philips Corp Multiemitter transistor with continuous ballast resistor
US3651565A (en) * 1968-09-09 1972-03-28 Nat Semiconductor Corp Lateral transistor structure and method of making the same
DE2015815B2 (de) * 1969-04-21 1976-06-24 Rca Corp., New York, N.Y. (V.St.A.) Schutzschaltung fuer einen integrierten schaltkreis
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3636385A (en) * 1970-02-13 1972-01-18 Ncr Co Protection circuit
US3628070A (en) * 1970-04-22 1971-12-14 Rca Corp Voltage reference and voltage level sensing circuit
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
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US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element

Also Published As

Publication number Publication date
FR2342557B1 (xx) 1983-07-08
DE2707744C2 (xx) 1990-03-01
JPS5649159U (xx) 1981-05-01
AU2250577A (en) 1978-08-31
CA1078072A (en) 1980-05-20
IT1074324B (it) 1985-04-20
GB1571343A (en) 1980-07-16
FR2342557A1 (fr) 1977-09-23
DE2707744A1 (de) 1977-09-01
NL176322B (nl) 1984-10-16
SE7701884L (sv) 1977-08-25
CH612794A5 (xx) 1979-08-15
NL7601843A (nl) 1977-08-26
NL176322C (nl) 1985-03-18
JPS52102689A (en) 1977-08-29
US4131908A (en) 1978-12-26
AU506552B2 (en) 1980-01-10

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