SE408500B - Laddningsoverforingsavkenningskrets - Google Patents
LaddningsoverforingsavkenningskretsInfo
- Publication number
- SE408500B SE408500B SE7508311A SE7508311A SE408500B SE 408500 B SE408500 B SE 408500B SE 7508311 A SE7508311 A SE 7508311A SE 7508311 A SE7508311 A SE 7508311A SE 408500 B SE408500 B SE 408500B
- Authority
- SE
- Sweden
- Prior art keywords
- charge transfer
- sensor circuit
- transfer sensor
- circuit
- charge
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Amplifiers (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/491,023 US3949381A (en) | 1974-07-23 | 1974-07-23 | Differential charge transfer sense amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7508311L SE7508311L (sv) | 1976-01-26 |
| SE408500B true SE408500B (sv) | 1979-06-11 |
Family
ID=23950483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7508311A SE408500B (sv) | 1974-07-23 | 1975-07-22 | Laddningsoverforingsavkenningskrets |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3949381A (it) |
| JP (2) | JPS5539075B2 (it) |
| BE (1) | BE830434A (it) |
| CA (1) | CA1058321A (it) |
| CH (1) | CH594956A5 (it) |
| DE (1) | DE2525225C2 (it) |
| ES (1) | ES439584A1 (it) |
| FR (1) | FR2280247A1 (it) |
| GB (1) | GB1495063A (it) |
| IT (1) | IT1039030B (it) |
| NL (1) | NL7508612A (it) |
| SE (1) | SE408500B (it) |
| SU (1) | SU673202A3 (it) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1523752A (en) * | 1974-08-28 | 1978-09-06 | Siemens Ag | Dynamic semiconductor data stores |
| US4168537A (en) * | 1975-05-02 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile memory system enabling nonvolatile data transfer during power on |
| JPS51139220A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Sense amplifier |
| US4158891A (en) * | 1975-08-18 | 1979-06-19 | Honeywell Information Systems Inc. | Transparent tri state latch |
| US3983544A (en) * | 1975-08-25 | 1976-09-28 | International Business Machines Corporation | Split memory array sharing same sensing and bit decode circuitry |
| DE2541686A1 (de) * | 1975-09-18 | 1977-03-24 | Siemens Ag | Regenerierschaltung fuer ladungsgekoppelte elemente |
| US4031415A (en) * | 1975-10-22 | 1977-06-21 | Texas Instruments Incorporated | Address buffer circuit for semiconductor memory |
| US4039861A (en) * | 1976-02-09 | 1977-08-02 | International Business Machines Corporation | Cross-coupled charge transfer sense amplifier circuits |
| JPS5922316B2 (ja) * | 1976-02-24 | 1984-05-25 | 株式会社東芝 | ダイナミツクメモリ装置 |
| US4038567A (en) * | 1976-03-22 | 1977-07-26 | International Business Machines Corporation | Memory input signal buffer circuit |
| US4045783A (en) * | 1976-04-12 | 1977-08-30 | Standard Microsystems Corporation | Mos one transistor cell ram having divided and balanced bit lines, coupled by regenerative flip-flop sense amplifiers, and balanced access circuitry |
| US4028557A (en) * | 1976-05-21 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | Dynamic sense-refresh detector amplifier |
| US4081701A (en) * | 1976-06-01 | 1978-03-28 | Texas Instruments Incorporated | High speed sense amplifier for MOS random access memory |
| JPS52152128A (en) * | 1976-06-14 | 1977-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Minute signal detection circuit |
| DE2630797C2 (de) * | 1976-07-08 | 1978-08-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind |
| US4113880A (en) * | 1976-11-17 | 1978-09-12 | The Upjohn Company | 2'-Hydroxy-3'-carboxy-5'-nitrooxanilate compounds, compositions, and methods of use |
| DE2712735B1 (de) * | 1977-03-23 | 1978-09-14 | Ibm Deutschland | Lese-/Schreibzugriffschaltung zu Speicherzellen eines Speichers und Verfahren zu ihrem Betrieb |
| JPS53123039A (en) * | 1977-04-01 | 1978-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Detection circuit for signal voltage |
| US4134151A (en) * | 1977-05-02 | 1979-01-09 | Electronic Memories & Magnetics Corporation | Single sense line memory cell |
| DE2801255C2 (de) * | 1978-01-12 | 1984-06-28 | Siemens AG, 1000 Berlin und 8000 München | Bewerterschaltung für symmetrisch strukturierte Halbleiterspeicher mit Ein-Transistor-Speicherelementen |
| US4162416A (en) * | 1978-01-16 | 1979-07-24 | Bell Telephone Laboratories, Incorporated | Dynamic sense-refresh detector amplifier |
| JPS5817997B2 (ja) * | 1978-03-31 | 1983-04-11 | 株式会社日立製作所 | メモリシステム |
| US4160275A (en) * | 1978-04-03 | 1979-07-03 | International Business Machines Corporation | Accessing arrangement for memories with small cells |
| DE2919166C2 (de) * | 1978-05-12 | 1986-01-02 | Nippon Electric Co., Ltd., Tokio/Tokyo | Speichervorrichtung |
| US4239993A (en) * | 1978-09-22 | 1980-12-16 | Texas Instruments Incorporated | High performance dynamic sense amplifier with active loads |
| US4370575A (en) * | 1978-09-22 | 1983-01-25 | Texas Instruments Incorporated | High performance dynamic sense amplifier with active loads |
| JPS5545188A (en) * | 1978-09-27 | 1980-03-29 | Nec Corp | Dynamic random access memory unit |
| JPS5931155B2 (ja) * | 1979-10-11 | 1984-07-31 | インターナシヨナルビジネス マシーンズ コーポレーシヨン | 感知増幅回路 |
| US4279023A (en) * | 1979-12-19 | 1981-07-14 | International Business Machines Corporation | Sense latch |
| DE3364452D1 (de) * | 1982-01-20 | 1986-08-21 | Matsushita Electric Ind Co Ltd | Fet circuits |
| JPS61145794A (ja) * | 1984-12-19 | 1986-07-03 | Nec Corp | 半導体メモリの駆動方法 |
| US4816706A (en) * | 1987-09-10 | 1989-03-28 | International Business Machines Corporation | Sense amplifier with improved bitline precharging for dynamic random access memory |
| US5270591A (en) * | 1992-02-28 | 1993-12-14 | Xerox Corporation | Content addressable memory architecture and circuits |
| US5532623A (en) * | 1994-10-21 | 1996-07-02 | Waferscale Integration, Inc. | Sense amplifier with read current tracking and zero standby power consumption |
| US5525918A (en) * | 1994-12-27 | 1996-06-11 | Alliance Semiconductor Corporation | Pre-sense amplifier for monolithic memories |
| KR100264075B1 (ko) * | 1997-06-20 | 2000-08-16 | 김영환 | 전하 증폭 비트 라인 센스 앰프 |
| US7023243B2 (en) * | 2002-05-08 | 2006-04-04 | University Of Southern California | Current source evaluation sense-amplifier |
| US6606049B1 (en) * | 2002-08-02 | 2003-08-12 | Ami Semiconductor, Inc. | Analog to digital converters based on transconveyance amplifiers |
| US7263016B1 (en) | 2004-06-07 | 2007-08-28 | Virage Logic Corporation | Method and system for pre-charging and biasing a latch-type sense amplifier |
| WO2007099623A1 (ja) * | 2006-03-01 | 2007-09-07 | Renesas Technology Corp. | 半導体記憶装置 |
| CN103559903B (zh) * | 2013-10-25 | 2016-09-28 | 中国科学院微电子研究所 | 一种灵敏放大器 |
| US11037621B2 (en) * | 2018-12-26 | 2021-06-15 | Micron Technology, Inc. | Sensing techniques using a charge transfer device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3514765A (en) * | 1969-05-23 | 1970-05-26 | Shell Oil Co | Sense amplifier comprising cross coupled mosfet's operating in a race mode for single device per bit mosfet memories |
| US3678473A (en) * | 1970-06-04 | 1972-07-18 | Shell Oil Co | Read-write circuit for capacitive memory arrays |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| US3760381A (en) * | 1972-06-30 | 1973-09-18 | Ibm | Stored charge memory detection circuit |
| US3771147A (en) * | 1972-12-04 | 1973-11-06 | Bell Telephone Labor Inc | Igfet memory system |
-
1974
- 1974-07-23 US US05/491,023 patent/US3949381A/en not_active Expired - Lifetime
-
1975
- 1975-05-26 CH CH670475A patent/CH594956A5/xx not_active IP Right Cessation
- 1975-06-03 FR FR7518149A patent/FR2280247A1/fr active Granted
- 1975-06-06 DE DE2525225A patent/DE2525225C2/de not_active Expired
- 1975-06-17 IT IT24423/75A patent/IT1039030B/it active
- 1975-06-19 BE BE157502A patent/BE830434A/xx not_active IP Right Cessation
- 1975-06-23 GB GB26502/75A patent/GB1495063A/en not_active Expired
- 1975-06-24 JP JP7711975A patent/JPS5539075B2/ja not_active Expired
- 1975-07-07 CA CA230,887A patent/CA1058321A/en not_active Expired
- 1975-07-18 NL NL7508612A patent/NL7508612A/xx not_active Application Discontinuation
- 1975-07-21 ES ES439584A patent/ES439584A1/es not_active Expired
- 1975-07-21 SU SU752156922A patent/SU673202A3/ru active
- 1975-07-22 SE SE7508311A patent/SE408500B/xx not_active IP Right Cessation
-
1979
- 1979-07-13 JP JP54088394A patent/JPS58116B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58116B2 (ja) | 1983-01-05 |
| US3949381A (en) | 1976-04-06 |
| CA1058321A (en) | 1979-07-10 |
| DE2525225A1 (de) | 1976-02-05 |
| ES439584A1 (es) | 1977-02-16 |
| CH594956A5 (it) | 1978-01-31 |
| JPS5539075B2 (it) | 1980-10-08 |
| JPS5119943A (it) | 1976-02-17 |
| AU8328875A (en) | 1977-01-27 |
| DE2525225C2 (de) | 1984-02-23 |
| FR2280247B1 (it) | 1977-07-22 |
| SU673202A3 (ru) | 1979-07-05 |
| FR2280247A1 (fr) | 1976-02-20 |
| SE7508311L (sv) | 1976-01-26 |
| BE830434A (fr) | 1975-10-16 |
| NL7508612A (nl) | 1976-01-27 |
| IT1039030B (it) | 1979-12-10 |
| JPS5512600A (en) | 1980-01-29 |
| GB1495063A (en) | 1977-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
Ref document number: 7508311-3 Effective date: 19940210 Format of ref document f/p: F |