SE0303259L - Kiselkarbidhalvledaranordning med ökad bärarrörlighet - Google Patents
Kiselkarbidhalvledaranordning med ökad bärarrörlighetInfo
- Publication number
- SE0303259L SE0303259L SE0303259A SE0303259A SE0303259L SE 0303259 L SE0303259 L SE 0303259L SE 0303259 A SE0303259 A SE 0303259A SE 0303259 A SE0303259 A SE 0303259A SE 0303259 L SE0303259 L SE 0303259L
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor device
- silicon carbide
- carrier mobility
- carbide semiconductor
- increased carrier
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002375266A JP4360085B2 (ja) | 2002-12-25 | 2002-12-25 | 炭化珪素半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
SE0303259D0 SE0303259D0 (sv) | 2003-12-04 |
SE0303259L true SE0303259L (sv) | 2004-06-26 |
SE525949C2 SE525949C2 (sv) | 2005-05-31 |
Family
ID=29728576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0303259A SE525949C2 (sv) | 2002-12-25 | 2003-12-04 | Kiselkarbidtransistor med ökad bärarrörlighet |
Country Status (4)
Country | Link |
---|---|
US (1) | US7045879B2 (sv) |
JP (1) | JP4360085B2 (sv) |
DE (1) | DE10361256B4 (sv) |
SE (1) | SE525949C2 (sv) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005053034A1 (ja) * | 2003-11-25 | 2005-06-09 | Matsushita Electric Industrial Co., Ltd. | 半導体素子 |
DE102005017814B4 (de) * | 2004-04-19 | 2016-08-11 | Denso Corporation | Siliziumkarbid-Halbleiterbauelement und Verfahren zu dessen Herstellung |
JP4775102B2 (ja) * | 2005-05-09 | 2011-09-21 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2011181949A (ja) * | 2005-05-09 | 2011-09-15 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
CA2669581A1 (en) * | 2006-11-21 | 2009-05-29 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing the same |
JPWO2008126541A1 (ja) * | 2007-04-05 | 2010-07-22 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5307381B2 (ja) * | 2007-11-12 | 2013-10-02 | Hoya株式会社 | 半導体素子ならびに半導体素子製造法 |
JP5332216B2 (ja) * | 2008-02-04 | 2013-11-06 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5432488B2 (ja) * | 2008-09-02 | 2014-03-05 | 関西電力株式会社 | バイポーラ型半導体装置 |
JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
EP2610912A4 (en) * | 2010-08-27 | 2014-10-22 | Nat Univ Corp Nara Inst | SIC SEMICONDUCTOR ELEMENT |
JP2014154667A (ja) * | 2013-02-07 | 2014-08-25 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP5884804B2 (ja) * | 2013-09-26 | 2016-03-15 | 株式会社デンソー | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
WO2016051935A1 (ja) * | 2014-10-03 | 2016-04-07 | 日本碍子株式会社 | 半導体素子用のエピタキシャル基板およびその製造方法 |
JP2016052994A (ja) * | 2015-11-13 | 2016-04-14 | 株式会社デンソー | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
CN114530506B (zh) * | 2021-11-02 | 2023-03-17 | 浙江芯科半导体有限公司 | 用于SiC基场效应晶体管的栅介质薄膜晶体管及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19712561C1 (de) * | 1997-03-25 | 1998-04-30 | Siemens Ag | SiC-Halbleiteranordnung mit hoher Kanalbeweglichkeit |
EP1065726B1 (en) * | 1998-03-19 | 2010-01-13 | Hitachi, Ltd. | Silicon carbide junction-gate field effect transistor |
JP2000294777A (ja) * | 1999-04-08 | 2000-10-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6504176B2 (en) * | 2000-04-06 | 2003-01-07 | Matshushita Electric Industrial Co., Ltd. | Field effect transistor and method of manufacturing the same |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
-
2002
- 2002-12-25 JP JP2002375266A patent/JP4360085B2/ja not_active Expired - Fee Related
-
2003
- 2003-12-04 SE SE0303259A patent/SE525949C2/sv not_active IP Right Cessation
- 2003-12-24 US US10/744,071 patent/US7045879B2/en not_active Expired - Lifetime
- 2003-12-24 DE DE10361256.4A patent/DE10361256B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE10361256A1 (de) | 2004-07-08 |
SE0303259D0 (sv) | 2003-12-04 |
JP4360085B2 (ja) | 2009-11-11 |
US20040159841A1 (en) | 2004-08-19 |
SE525949C2 (sv) | 2005-05-31 |
DE10361256B4 (de) | 2017-03-23 |
JP2004207511A (ja) | 2004-07-22 |
US7045879B2 (en) | 2006-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |