RU2017134935A - Слоистая структура для oled и способ получения такой структуры - Google Patents
Слоистая структура для oled и способ получения такой структуры Download PDFInfo
- Publication number
- RU2017134935A RU2017134935A RU2017134935A RU2017134935A RU2017134935A RU 2017134935 A RU2017134935 A RU 2017134935A RU 2017134935 A RU2017134935 A RU 2017134935A RU 2017134935 A RU2017134935 A RU 2017134935A RU 2017134935 A RU2017134935 A RU 2017134935A
- Authority
- RU
- Russia
- Prior art keywords
- layer
- layered structure
- oxide
- ald
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000231 atomic layer deposition Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 238000005406 washing Methods 0.000 claims 5
- 239000002253 acid Substances 0.000 claims 4
- 239000011521 glass Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000009210 therapy by ultrasound Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15163911.9A EP3082172A1 (en) | 2015-04-16 | 2015-04-16 | Layered structure for an oled and a method for producing such a structure |
| EP15163911.9 | 2015-04-16 | ||
| PCT/EP2016/056448 WO2016165921A1 (en) | 2015-04-16 | 2016-03-23 | Layered structure for an oled and a method for producing such a structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2017134935A true RU2017134935A (ru) | 2019-04-05 |
| RU2017134935A3 RU2017134935A3 (enExample) | 2019-07-26 |
Family
ID=52946413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2017134935A RU2017134935A (ru) | 2015-04-16 | 2016-03-23 | Слоистая структура для oled и способ получения такой структуры |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10367142B2 (enExample) |
| EP (1) | EP3082172A1 (enExample) |
| JP (1) | JP2018516431A (enExample) |
| KR (1) | KR20170137087A (enExample) |
| CN (1) | CN107431144B (enExample) |
| RU (1) | RU2017134935A (enExample) |
| TW (1) | TW201705581A (enExample) |
| WO (1) | WO2016165921A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2637715T3 (es) * | 2014-12-01 | 2017-10-16 | Saint-Gobain Glass France | Sustrato OLED difusor transparente y método para producir dicho sustrato |
| CN110429161B (zh) * | 2018-08-07 | 2021-04-20 | 广东聚华印刷显示技术有限公司 | 光学增透结构及底发射型电致发光器件和制备方法 |
| CN109148694A (zh) * | 2018-08-27 | 2019-01-04 | 领旺（上海）光伏科技有限公司 | 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法 |
| CN111384271B (zh) * | 2018-12-29 | 2021-05-28 | Tcl科技集团股份有限公司 | 量子点发光二极管及其制备方法 |
| CN110747449B (zh) * | 2019-11-19 | 2021-01-05 | 哈尔滨工业大学 | 一种用于电子屏幕的自洁疏水膜层的制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE655526A (fr) | 1964-11-10 | 1965-05-10 | Acec | Poêle à accumulation |
| JP4363365B2 (ja) * | 2004-07-20 | 2009-11-11 | 株式会社デンソー | カラー有機ｅｌディスプレイおよびその製造方法 |
| US7335980B2 (en) * | 2004-11-04 | 2008-02-26 | International Business Machines Corporation | Hardmask for reliability of silicon based dielectrics |
| CN101766052B (zh) | 2007-07-27 | 2012-07-18 | 旭硝子株式会社 | 透光性基板、其制造方法、有机led元件及其制造方法 |
| FR2955575B1 (fr) * | 2010-01-22 | 2012-02-24 | Saint Gobain | Substrat verrier revetu d'une couche haut indice sous un revetement electrode et dispositif electroluminescent organique comportant un tel substrat. |
| FR2958795B1 (fr) * | 2010-04-12 | 2012-06-15 | Commissariat Energie Atomique | Dispositif optoelectronique organique et son procede d'encapsulation. |
| WO2012093467A1 (ja) * | 2011-01-06 | 2012-07-12 | シャープ株式会社 | 有機ｅｌ表示装置およびその製造方法 |
| KR101825053B1 (ko) * | 2011-01-11 | 2018-02-05 | 삼성디스플레이 주식회사 | 유기발광표시장치의 제조방법 |
| WO2012133716A1 (ja) * | 2011-03-29 | 2012-10-04 | Ｎｅｃライティング株式会社 | 有機ｅｌ発光装置、有機ｅｌ発光装置の製造方法及び有機ｅｌ照明装置 |
| KR101715112B1 (ko) | 2012-06-14 | 2017-03-10 | 쌩-고벵 글래스 프랑스 | Ｏｌｅｄ 소자용 적층체, 그 제조방법 및 이를 구비한 ｏｌｅｄ 소자 |
| FR2993707B1 (fr) | 2012-07-17 | 2015-03-13 | Saint Gobain | Electrode supportee transparente pour oled |
| ES2548048T3 (es) | 2012-09-28 | 2015-10-13 | Saint-Gobain Glass France | Método de para producir un sustrato OLED difusor transparente |
| WO2014092041A1 (ja) * | 2012-12-13 | 2014-06-19 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンスデバイスの製造方法 |
| FR3020179B1 (fr) | 2014-04-22 | 2017-10-06 | Saint Gobain | Electrode supportee transparente pour oled |
-
2015
- 2015-04-16 EP EP15163911.9A patent/EP3082172A1/en not_active Withdrawn
-
2016
- 2016-03-23 RU RU2017134935A patent/RU2017134935A/ru not_active Application Discontinuation
- 2016-03-23 JP JP2017553325A patent/JP2018516431A/ja active Pending
- 2016-03-23 US US15/566,447 patent/US10367142B2/en not_active Expired - Fee Related
- 2016-03-23 CN CN201680021834.8A patent/CN107431144B/zh not_active Expired - Fee Related
- 2016-03-23 WO PCT/EP2016/056448 patent/WO2016165921A1/en not_active Ceased
- 2016-03-23 KR KR1020177028680A patent/KR20170137087A/ko not_active Withdrawn
- 2016-03-28 TW TW105109756A patent/TW201705581A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016165921A1 (en) | 2016-10-20 |
| CN107431144A (zh) | 2017-12-01 |
| RU2017134935A3 (enExample) | 2019-07-26 |
| KR20170137087A (ko) | 2017-12-12 |
| TW201705581A (zh) | 2017-02-01 |
| CN107431144B (zh) | 2019-10-01 |
| US10367142B2 (en) | 2019-07-30 |
| US20180114910A1 (en) | 2018-04-26 |
| JP2018516431A (ja) | 2018-06-21 |
| EP3082172A1 (en) | 2016-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA94 | Acknowledgement of application withdrawn (non-payment of fees) |
Effective date: 20210111 |