CN107431144B - 用于oled的分层结构和制造这样的结构的方法 - Google Patents

用于oled的分层结构和制造这样的结构的方法 Download PDF

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Publication number
CN107431144B
CN107431144B CN201680021834.8A CN201680021834A CN107431144B CN 107431144 B CN107431144 B CN 107431144B CN 201680021834 A CN201680021834 A CN 201680021834A CN 107431144 B CN107431144 B CN 107431144B
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China
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layer
layered structure
iel
ald
oxide
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Expired - Fee Related
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CN201680021834.8A
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Chinese (zh)
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CN107431144A (zh
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李荣盛
S.勒莫亚尔
韩镇宇
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Saint Gobain Glass France SAS
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Saint Gobain Glass France SAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
CN201680021834.8A 2015-04-16 2016-03-23 用于oled的分层结构和制造这样的结构的方法 Expired - Fee Related CN107431144B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP15163911.9A EP3082172A1 (en) 2015-04-16 2015-04-16 Layered structure for an oled and a method for producing such a structure
EP15163911.9 2015-04-16
PCT/EP2016/056448 WO2016165921A1 (en) 2015-04-16 2016-03-23 Layered structure for an oled and a method for producing such a structure

Publications (2)

Publication Number Publication Date
CN107431144A CN107431144A (zh) 2017-12-01
CN107431144B true CN107431144B (zh) 2019-10-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680021834.8A Expired - Fee Related CN107431144B (zh) 2015-04-16 2016-03-23 用于oled的分层结构和制造这样的结构的方法

Country Status (8)

Country Link
US (1) US10367142B2 (enExample)
EP (1) EP3082172A1 (enExample)
JP (1) JP2018516431A (enExample)
KR (1) KR20170137087A (enExample)
CN (1) CN107431144B (enExample)
RU (1) RU2017134935A (enExample)
TW (1) TW201705581A (enExample)
WO (1) WO2016165921A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2637715T3 (es) * 2014-12-01 2017-10-16 Saint-Gobain Glass France Sustrato OLED difusor transparente y método para producir dicho sustrato
CN110429161B (zh) * 2018-08-07 2021-04-20 广东聚华印刷显示技术有限公司 光学增透结构及底发射型电致发光器件和制备方法
CN109148694A (zh) * 2018-08-27 2019-01-04 领旺（上海）光伏科技有限公司 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法
CN111384271B (zh) * 2018-12-29 2021-05-28 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
CN110747449B (zh) * 2019-11-19 2021-01-05 哈尔滨工业大学 一种用于电子屏幕的自洁疏水膜层的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1783479A (zh) * 2004-11-04 2006-06-07 国际商业机器公司 互连结构及其形成方法
WO2012093467A1 (ja) * 2011-01-06 2012-07-12 シャープ株式会社 有機ｅｌ表示装置およびその製造方法
WO2013187735A1 (en) * 2012-06-14 2013-12-19 Saint-Gobain Glass France Layered structure for oled device, method for manufacturing the same, and oled device having the same
WO2014013183A1 (fr) * 2012-07-17 2014-01-23 Saint-Gobain Glass France Electrode supportee transparente pour oled

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE655526A (fr) 1964-11-10 1965-05-10 Acec Poêle à accumulation
JP4363365B2 (ja) * 2004-07-20 2009-11-11 株式会社デンソー カラー有機ｅｌディスプレイおよびその製造方法
CN101766052B (zh) 2007-07-27 2012-07-18 旭硝子株式会社 透光性基板、其制造方法、有机led元件及其制造方法
FR2955575B1 (fr) * 2010-01-22 2012-02-24 Saint Gobain Substrat verrier revetu d'une couche haut indice sous un revetement electrode et dispositif electroluminescent organique comportant un tel substrat.
FR2958795B1 (fr) * 2010-04-12 2012-06-15 Commissariat Energie Atomique Dispositif optoelectronique organique et son procede d'encapsulation.
KR101825053B1 (ko) * 2011-01-11 2018-02-05 삼성디스플레이 주식회사 유기발광표시장치의 제조방법
WO2012133716A1 (ja) * 2011-03-29 2012-10-04 Ｎｅｃライティング株式会社 有機ｅｌ発光装置、有機ｅｌ発光装置の製造方法及び有機ｅｌ照明装置
ES2548048T3 (es) 2012-09-28 2015-10-13 Saint-Gobain Glass France Método de para producir un sustrato OLED difusor transparente
WO2014092041A1 (ja) * 2012-12-13 2014-06-19 コニカミノルタ株式会社 有機エレクトロルミネッセンスデバイスの製造方法
FR3020179B1 (fr) 2014-04-22 2017-10-06 Saint Gobain Electrode supportee transparente pour oled

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1783479A (zh) * 2004-11-04 2006-06-07 国际商业机器公司 互连结构及其形成方法
WO2012093467A1 (ja) * 2011-01-06 2012-07-12 シャープ株式会社 有機ｅｌ表示装置およびその製造方法
WO2013187735A1 (en) * 2012-06-14 2013-12-19 Saint-Gobain Glass France Layered structure for oled device, method for manufacturing the same, and oled device having the same
WO2014013183A1 (fr) * 2012-07-17 2014-01-23 Saint-Gobain Glass France Electrode supportee transparente pour oled

Also Published As

Publication number Publication date
RU2017134935A (ru) 2019-04-05
WO2016165921A1 (en) 2016-10-20
CN107431144A (zh) 2017-12-01
RU2017134935A3 (enExample) 2019-07-26
KR20170137087A (ko) 2017-12-12
TW201705581A (zh) 2017-02-01
US10367142B2 (en) 2019-07-30
US20180114910A1 (en) 2018-04-26
JP2018516431A (ja) 2018-06-21
EP3082172A1 (en) 2016-10-19

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