RU2014107762A - СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА НА ОСНОВЕ Si1-xGex В ПРИСУТСТВИИ ХМП КОМПОЗИЦИИ, ОБЛАДАЮЩЕЙ ЗНАЧЕНИЕМ pH ОТ 3,0 ДО 5,5 - Google Patents

СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА НА ОСНОВЕ Si1-xGex В ПРИСУТСТВИИ ХМП КОМПОЗИЦИИ, ОБЛАДАЮЩЕЙ ЗНАЧЕНИЕМ pH ОТ 3,0 ДО 5,5 Download PDF

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Publication number
RU2014107762A
RU2014107762A RU2014107762/28A RU2014107762A RU2014107762A RU 2014107762 A RU2014107762 A RU 2014107762A RU 2014107762/28 A RU2014107762/28 A RU 2014107762/28A RU 2014107762 A RU2014107762 A RU 2014107762A RU 2014107762 A RU2014107762 A RU 2014107762A
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RU
Russia
Prior art keywords
cmp composition
composition
cmp
total weight
particles
Prior art date
Application number
RU2014107762/28A
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English (en)
Russian (ru)
Inventor
Бастиан Мартен НОЛЛЕР
Беттина ДРЕШЕР
Кристоф ЖИЛЛО
Нинг ГАО
Original Assignee
Басф Се
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Басф Се filed Critical Басф Се
Publication of RU2014107762A publication Critical patent/RU2014107762A/ru

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
RU2014107762/28A 2011-08-01 2012-07-30 СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА НА ОСНОВЕ Si1-xGex В ПРИСУТСТВИИ ХМП КОМПОЗИЦИИ, ОБЛАДАЮЩЕЙ ЗНАЧЕНИЕМ pH ОТ 3,0 ДО 5,5 RU2014107762A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161513691P 2011-08-01 2011-08-01
US61/513691 2011-08-01
PCT/IB2012/053878 WO2013018016A2 (en) 2011-08-01 2012-07-30 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5

Publications (1)

Publication Number Publication Date
RU2014107762A true RU2014107762A (ru) 2015-09-10

Family

ID=47629745

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2014107762/28A RU2014107762A (ru) 2011-08-01 2012-07-30 СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА НА ОСНОВЕ Si1-xGex В ПРИСУТСТВИИ ХМП КОМПОЗИЦИИ, ОБЛАДАЮЩЕЙ ЗНАЧЕНИЕМ pH ОТ 3,0 ДО 5,5

Country Status (9)

Country Link
US (1) US20140199841A1 (https=)
EP (1) EP2741892A4 (https=)
JP (1) JP2014527298A (https=)
KR (1) KR20140071353A (https=)
CN (1) CN103717351A (https=)
IN (1) IN2014CN01603A (https=)
RU (1) RU2014107762A (https=)
TW (1) TW201311842A (https=)
WO (1) WO2013018016A2 (https=)

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US9238755B2 (en) * 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
JP2018506176A (ja) 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
JP6918600B2 (ja) * 2016-07-29 2021-08-11 芝浦メカトロニクス株式会社 処理液生成装置及びそれを用いた基板処理装置
CN107665839B (zh) 2016-07-29 2021-08-10 芝浦机械电子装置股份有限公司 处理液生成装置和使用该处理液生成装置的基板处理装置
TWI821407B (zh) 2018-09-28 2023-11-11 日商福吉米股份有限公司 研磨用組合物、研磨方法及基板之製造方法
JP7638667B2 (ja) 2019-11-20 2025-03-04 株式会社フジミインコーポレーテッド 研磨組成物、研磨方法および基板の製造方法
JP2022171565A (ja) * 2021-04-30 2022-11-11 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および研磨済基板の製造方法
US12590225B2 (en) 2021-04-30 2026-03-31 Fujimi Incorporated Polishing composition, polishing method, and method for producing polished substrate

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JP3027551B2 (ja) * 1997-07-03 2000-04-04 キヤノン株式会社 基板保持装置ならびに該基板保持装置を用いた研磨方法および研磨装置
FR2773177B1 (fr) * 1997-12-29 2000-03-17 France Telecom Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus
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Also Published As

Publication number Publication date
WO2013018016A3 (en) 2013-03-28
KR20140071353A (ko) 2014-06-11
TW201311842A (zh) 2013-03-16
EP2741892A4 (en) 2015-03-18
JP2014527298A (ja) 2014-10-09
US20140199841A1 (en) 2014-07-17
CN103717351A (zh) 2014-04-09
EP2741892A2 (en) 2014-06-18
IN2014CN01603A (https=) 2015-05-08
WO2013018016A2 (en) 2013-02-07

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Effective date: 20160906