CN103717351A - 一种制造半导体装置的方法，其包括在具有3.0至5.5的pH值的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex 材料 - Google Patents

一种制造半导体装置的方法，其包括在具有3.0至5.5的pH值的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex 材料 Download PDF

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Publication number
CN103717351A
CN103717351A CN201280037681.8A CN201280037681A CN103717351A CN 103717351 A CN103717351 A CN 103717351A CN 201280037681 A CN201280037681 A CN 201280037681A CN 103717351 A CN103717351 A CN 103717351A
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CN
China
Prior art keywords
cmp composition
composition
germanium
described cmp
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280037681.8A
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English (en)
Chinese (zh)
Inventor
B·M·诺勒
B·德雷舍尔
C·吉洛特
Y·李
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BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of CN103717351A publication Critical patent/CN103717351A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201280037681.8A 2011-08-01 2012-07-30 一种制造半导体装置的方法，其包括在具有3.0至5.5的pH值的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex 材料 Pending CN103717351A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161513691P 2011-08-01 2011-08-01
US61/513,691 2011-08-01
PCT/IB2012/053878 WO2013018016A2 (en) 2011-08-01 2012-07-30 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5

Publications (1)

Publication Number Publication Date
CN103717351A true CN103717351A (zh) 2014-04-09

Family

ID=47629745

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280037681.8A Pending CN103717351A (zh) 2011-08-01 2012-07-30 一种制造半导体装置的方法，其包括在具有3.0至5.5的pH值的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex 材料

Country Status (9)

Country Link
US (1) US20140199841A1 (https=)
EP (1) EP2741892A4 (https=)
JP (1) JP2014527298A (https=)
KR (1) KR20140071353A (https=)
CN (1) CN103717351A (https=)
IN (1) IN2014CN01603A (https=)
RU (1) RU2014107762A (https=)
TW (1) TW201311842A (https=)
WO (1) WO2013018016A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9238755B2 (en) * 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
JP2018506176A (ja) 2014-12-16 2018-03-01 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ゲルマニウムを含む基板の高効率研磨のための化学機械研磨（ｃｍｐ）組成物
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
JP6918600B2 (ja) * 2016-07-29 2021-08-11 芝浦メカトロニクス株式会社 処理液生成装置及びそれを用いた基板処理装置
CN107665839B (zh) 2016-07-29 2021-08-10 芝浦机械电子装置股份有限公司 处理液生成装置和使用该处理液生成装置的基板处理装置
TWI821407B (zh) 2018-09-28 2023-11-11 日商福吉米股份有限公司 研磨用組合物、研磨方法及基板之製造方法
JP7638667B2 (ja) 2019-11-20 2025-03-04 株式会社フジミインコーポレーテッド 研磨組成物、研磨方法および基板の製造方法
JP2022171565A (ja) * 2021-04-30 2022-11-11 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法および研磨済基板の製造方法
US12590225B2 (en) 2021-04-30 2026-03-31 Fujimi Incorporated Polishing composition, polishing method, and method for producing polished substrate

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190443B1 (en) * 1998-09-01 2001-02-20 Fujimi Incorporated Polishing composition
CN1334849A (zh) * 1998-09-24 2002-02-06 联合讯号公司 用于低介电常数材料的氧化抛光淤浆
CN1616572A (zh) * 2004-09-24 2005-05-18 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用
CN1632023A (zh) * 2004-11-24 2005-06-29 中国科学院上海微系统与信息技术研究所 硫系相变材料化学机械抛光的无磨料抛光液及其应用
CN1648191A (zh) * 2004-01-23 2005-08-03 捷时雅株式会社 化学机械研磨用水性分散剂及其化学机械研磨方法
CN101372606A (zh) * 2008-10-14 2009-02-25 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料氧化铈化学机械抛光液
US20110045654A1 (en) * 2008-06-10 2011-02-24 S.O.I.T.E.C. Silicon On Insulator Technologies Germanium layer polishing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
JP3027551B2 (ja) * 1997-07-03 2000-04-04 キヤノン株式会社 基板保持装置ならびに該基板保持装置を用いた研磨方法および研磨装置
FR2773177B1 (fr) * 1997-12-29 2000-03-17 France Telecom Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus
US6890835B1 (en) * 2000-10-19 2005-05-10 International Business Machines Corporation Layer transfer of low defect SiGe using an etch-back process
US6893936B1 (en) * 2004-06-29 2005-05-17 International Business Machines Corporation Method of Forming strained SI/SIGE on insulator with silicon germanium buffer
TWI402335B (zh) * 2006-09-08 2013-07-21 Kao Corp 研磨液組合物
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
US8110483B2 (en) * 2009-10-22 2012-02-07 International Business Machines Corporation Forming an extremely thin semiconductor-on-insulator (ETSOI) layer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190443B1 (en) * 1998-09-01 2001-02-20 Fujimi Incorporated Polishing composition
CN1334849A (zh) * 1998-09-24 2002-02-06 联合讯号公司 用于低介电常数材料的氧化抛光淤浆
CN1648191A (zh) * 2004-01-23 2005-08-03 捷时雅株式会社 化学机械研磨用水性分散剂及其化学机械研磨方法
CN1616572A (zh) * 2004-09-24 2005-05-18 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用
CN1632023A (zh) * 2004-11-24 2005-06-29 中国科学院上海微系统与信息技术研究所 硫系相变材料化学机械抛光的无磨料抛光液及其应用
US20110045654A1 (en) * 2008-06-10 2011-02-24 S.O.I.T.E.C. Silicon On Insulator Technologies Germanium layer polishing
CN101372606A (zh) * 2008-10-14 2009-02-25 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料氧化铈化学机械抛光液

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHIVAJI PEDDETI 等: "Chemical Mechanical Polishing of Ge Using Colloidal Silica", 《ELECTROCHEMICAL AND SOLID-STATE LETTERS》 *

Also Published As

Publication number Publication date
WO2013018016A3 (en) 2013-03-28
RU2014107762A (ru) 2015-09-10
KR20140071353A (ko) 2014-06-11
TW201311842A (zh) 2013-03-16
EP2741892A4 (en) 2015-03-18
JP2014527298A (ja) 2014-10-09
US20140199841A1 (en) 2014-07-17
EP2741892A2 (en) 2014-06-18
IN2014CN01603A (https=) 2015-05-08
WO2013018016A2 (en) 2013-02-07

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Application publication date: 20140409