RU2005112055A - Магнитный логический элемент, содержащий наномагниты - Google Patents

Магнитный логический элемент, содержащий наномагниты Download PDF

Info

Publication number
RU2005112055A
RU2005112055A RU2005112055/02A RU2005112055A RU2005112055A RU 2005112055 A RU2005112055 A RU 2005112055A RU 2005112055/02 A RU2005112055/02 A RU 2005112055/02A RU 2005112055 A RU2005112055 A RU 2005112055A RU 2005112055 A RU2005112055 A RU 2005112055A
Authority
RU
Russia
Prior art keywords
logic element
nanomagnets
magnetic logic
element containing
magnetic
Prior art date
Application number
RU2005112055/02A
Other languages
English (en)
Inventor
Расселл КАУБЕРН (GB)
Расселл КАУБЕРН
Марк ВЕЛЛЭНД (GB)
Марк ВЕЛЛЭНД
Original Assignee
Кембридж Юниверсити Текникал Сервисиз Лимитед (Gb)
Кембридж Юниверсити Текникал Сервисиз Лимитед
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Кембридж Юниверсити Текникал Сервисиз Лимитед (Gb), Кембридж Юниверсити Текникал Сервисиз Лимитед filed Critical Кембридж Юниверсити Текникал Сервисиз Лимитед (Gb)
Publication of RU2005112055A publication Critical patent/RU2005112055A/ru

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0018—Diamagnetic or paramagnetic materials, i.e. materials with low susceptibility and no hysteresis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H03K19/168—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using thin-film devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12951—Fe-base component

Claims (3)

1. Магнитный логический элемент, содержащий наномагниты с размером сторон 40-500 нм и толщиной 3-10 нм, имеющие геометрическую осевую симметрию вращения 3 или 5 порядка и являющиеся суперпарамагнитными с нулевым гистерезисом.
2. Магнитный логический элемент по п.1, выполненный из искусственного магнитного материала, сформированного на поверхности подложки, причем ось вращения по существу перпендикулярна упомянутой поверхности.
3. Магнитный логический элемент по п.1 или 2, выполненный из супермаллоя (Ni80Fe14Mo5).
RU2005112055/02A 1999-04-09 2005-04-21 Магнитный логический элемент, содержащий наномагниты RU2005112055A (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9908179.6 1999-04-09
GBGB9908179.6A GB9908179D0 (en) 1999-04-09 1999-04-09 Magnetic materials

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
RU2004101439/02A Division RU2274917C2 (ru) 1999-04-09 2004-01-16 Элемент датчика, содержащий наномагниты

Publications (1)

Publication Number Publication Date
RU2005112055A true RU2005112055A (ru) 2006-10-27

Family

ID=10851267

Family Applications (3)

Application Number Title Priority Date Filing Date
RU2001130141/02A RU2244971C2 (ru) 1999-04-09 2000-04-07 Магнитные материалы
RU2004101439/02A RU2274917C2 (ru) 1999-04-09 2004-01-16 Элемент датчика, содержащий наномагниты
RU2005112055/02A RU2005112055A (ru) 1999-04-09 2005-04-21 Магнитный логический элемент, содержащий наномагниты

Family Applications Before (2)

Application Number Title Priority Date Filing Date
RU2001130141/02A RU2244971C2 (ru) 1999-04-09 2000-04-07 Магнитные материалы
RU2004101439/02A RU2274917C2 (ru) 1999-04-09 2004-01-16 Элемент датчика, содержащий наномагниты

Country Status (15)

Country Link
US (1) US6614084B1 (ru)
EP (3) EP1598834B1 (ru)
JP (3) JP4287062B2 (ru)
KR (1) KR100699611B1 (ru)
CN (1) CN1251251C (ru)
AT (3) ATE408885T1 (ru)
AU (1) AU763157B2 (ru)
CA (1) CA2366588A1 (ru)
DE (3) DE60031181T2 (ru)
DK (1) DK1169720T3 (ru)
ES (1) ES2225119T3 (ru)
GB (1) GB9908179D0 (ru)
PT (1) PT1169720E (ru)
RU (3) RU2244971C2 (ru)
WO (1) WO2000062311A1 (ru)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9925213D0 (en) 1999-10-25 1999-12-22 Univ Cambridge Tech Magnetic logic elements
US8134441B1 (en) * 2008-06-02 2012-03-13 The Regents Of The University Of California Nanomagnetic signal propagation and logic gates
US8138874B1 (en) 2009-07-20 2012-03-20 The Regents Of The University Of California Nanomagnetic register
WO2011044100A2 (en) * 2009-10-05 2011-04-14 University Of Delaware Ferromagnetic resonance and memory effect in magnetic composite materials
US9196280B2 (en) * 2009-11-12 2015-11-24 Marquette University Low-field magnetic domain wall injection pad and high-density storage wire
KR200452028Y1 (ko) * 2010-02-23 2011-02-01 정진시그널(주) 투명 반사부를 갖는 도로 표지병
US8766754B2 (en) 2012-07-18 2014-07-01 The Regents Of The University Of California Concave nanomagnets with widely tunable anisotropy
US9460737B2 (en) 2013-04-18 2016-10-04 Headway Technologies, Inc. Supermalloy and mu metal side and top shields for magnetic read heads
FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
ES2833377T3 (es) * 2015-06-04 2021-06-15 Endomagnetics Ltd Materiales marcadores y formas de localizar un marcador magnético

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810653B2 (ja) * 1990-11-22 1996-01-31 科学技術庁金属材料技術研究所長 磁性体微粒子の配列格子構造
US5710436A (en) 1994-09-27 1998-01-20 Kabushiki Kaisha Toshiba Quantum effect device
US5741435A (en) * 1995-08-08 1998-04-21 Nano Systems, Inc. Magnetic memory having shape anisotropic magnetic elements
US5714536A (en) * 1996-01-11 1998-02-03 Xerox Corporation Magnetic nanocompass compositions and processes for making and using
JPH09298320A (ja) * 1996-05-09 1997-11-18 Kobe Steel Ltd 酸化物超電導コイル用永久電流スイッチおよびそれを用いたスイッチ装置並びにスイッチング方法
US6451220B1 (en) * 1997-01-21 2002-09-17 Xerox Corporation High density magnetic recording compositions and processes thereof
JPH10326920A (ja) * 1997-03-26 1998-12-08 Delta Tsuuring:Kk 磁気抵抗効果センサー及びその製造方法
JPH1179894A (ja) * 1997-09-04 1999-03-23 Mitsubishi Gas Chem Co Inc ビスマス置換希土類鉄ガーネット単結晶膜
US5898549A (en) * 1997-10-27 1999-04-27 International Business Machines Corporation Anti-parallel-pinned spin valve sensor with minimal pinned layer shunting
JP3216605B2 (ja) * 1998-07-06 2001-10-09 日本電気株式会社 ドットアレー状磁性膜並びにこれを用いた磁気記録媒体及び磁気抵抗効果素子
US6269018B1 (en) * 2000-04-13 2001-07-31 International Business Machines Corporation Magnetic random access memory using current through MTJ write mechanism

Also Published As

Publication number Publication date
EP1437746A3 (en) 2004-09-08
JP2008288580A (ja) 2008-11-27
JP4287062B2 (ja) 2009-07-01
US6614084B1 (en) 2003-09-02
CN1346498A (zh) 2002-04-24
DE60031181T2 (de) 2007-08-23
EP1169720A1 (en) 2002-01-09
DE60031181D1 (de) 2006-11-16
DE60040307D1 (de) 2008-10-30
RU2274917C2 (ru) 2006-04-20
ES2225119T3 (es) 2005-03-16
KR100699611B1 (ko) 2007-03-23
EP1169720B1 (en) 2004-08-04
KR20020008148A (ko) 2002-01-29
JP2002541614A (ja) 2002-12-03
ATE408885T1 (de) 2008-10-15
EP1437746A2 (en) 2004-07-14
DE60012720D1 (de) 2004-09-09
AU763157B2 (en) 2003-07-17
GB9908179D0 (en) 1999-06-02
RU2244971C2 (ru) 2005-01-20
PT1169720E (pt) 2004-11-30
WO2000062311A1 (en) 2000-10-19
RU2004101439A (ru) 2005-06-27
EP1598834A3 (en) 2006-05-10
ATE341821T1 (de) 2006-10-15
CA2366588A1 (en) 2000-10-19
EP1598834A2 (en) 2005-11-23
DE60012720T2 (de) 2005-08-04
EP1598834B1 (en) 2008-09-17
AU3978500A (en) 2000-11-14
DK1169720T3 (da) 2004-12-06
ATE272889T1 (de) 2004-08-15
CN1251251C (zh) 2006-04-12
JP2009002937A (ja) 2009-01-08
EP1437746B1 (en) 2006-10-04

Similar Documents

Publication Publication Date Title
RU2005112055A (ru) Магнитный логический элемент, содержащий наномагниты
EP1061592A3 (en) Magneto-resistance effect element, and its use as memory element
MY120928A (en) Magnetoresistance effect element
CA2060561A1 (en) Magnetoresistive sensor based on oscillations in the magnetoresistance
RU2001130141A (ru) Магнитные материалы
KR890015207A (ko) 자기기록체의 제조방법
EP0965987A3 (en) Magneto-optical recording medium
JP2003516597A5 (ru)
JPH05335650A (ja) 強磁性磁気抵抗素子
JPH0888118A (ja) 交換結合膜および磁気抵抗効果素子
JPH07297465A (ja) 絶縁ピン留め層を備えた巨大磁気抵抗センサ
KR970067110A (ko) 박막 자기 헤드
KR980005080A (ko) 코발트 피복된 침상의 자성 산화철 입자
US20020018916A1 (en) Magnetic thin film and process for producing the same
Lodder Magnetization reversal mechanism in CoCr media for perpendicular recording
JPH10173252A (ja) 磁気抵抗効果素子及び磁気抵抗センサ
KR890015284A (ko) 수직의 자성 기억 매체
JP2000196164A (ja) 磁気抵抗素子及び磁性メモリー及びそれらの製造方法
Grunberg et al. Layered Magnetic Structures: Exchange Coupling of Ferromagnetic Layers Across Interlayers
KR940007791A (ko) 자기기록매체 및 그 제조방법
RU2023320C1 (ru) Магнитный носитель для запоминающих элементов с квазизамкнутым магнитным потоком
JPS6467713A (en) Magnetic recording medium
JPS6387166A (ja) ヒステリシスカツプリング
Szafranska-Miller et al. Magnetic Anisotropy and Rotational Hysteresis Energy in Nd sub 15 Fe sub 77 B sub 8 Permanent Magnet
WO1999062068A3 (de) Magnetischer speicher

Legal Events

Date Code Title Description
FA93 Acknowledgement of application withdrawn (no request for examination)

Effective date: 20080422