RU2004101439A - Магнитные материалы - Google Patents
Магнитные материалы Download PDFInfo
- Publication number
- RU2004101439A RU2004101439A RU2004101439/02A RU2004101439A RU2004101439A RU 2004101439 A RU2004101439 A RU 2004101439A RU 2004101439/02 A RU2004101439/02 A RU 2004101439/02A RU 2004101439 A RU2004101439 A RU 2004101439A RU 2004101439 A RU2004101439 A RU 2004101439A
- Authority
- RU
- Russia
- Prior art keywords
- element according
- axial symmetry
- orders
- range
- sensor element
- Prior art date
Links
- 239000000696 magnetic material Substances 0.000 title claims 3
- 230000005415 magnetization Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910000601 superalloy Inorganic materials 0.000 claims 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
- G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0018—Diamagnetic or paramagnetic materials, i.e. materials with low susceptibility and no hysteresis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
- H03K19/168—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using thin-film devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12951—Fe-base component
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Hard Magnetic Materials (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Soft Magnetic Materials (AREA)
- Valve Device For Special Equipments (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Record Carriers (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Claims (18)
1. Элемент датчика, содержащий наномагнетики, имеющие геометрическую осевую симметрию вращения, выбранную так, что они являются суперпарамагнитными и имеют по существу нулевой гистерезис, так что намагниченность наномагнетиков зависит только от текущего значения приложенного поля, а не от предыстории поля.
2. Элемент датчика по п.1, выполненный из искусственного магнитного материала, сформированного на поверхности подложки, причем ось по существу перпендикулярна указанной поверхности.
3. Элемент датчика по одному из п.1 или 2, выполненный из супермаллоя (Ni80Fe14Mo5).
4. Элемент датчика по одному из п.1 или 2, размер стороны которого выбирают в диапазоне 40-500 нм, а толщину - в диапазоне 3-10 нм.
5. Элемент датчика по п.3, размер стороны которого выбирают в диапазоне 40-500 нм, а толщину - в диапазоне 3-10 нм.
6. Элемент датчика по одному из п.1 или 2, имеющий осевую симметрию 3 или 5 порядка.
7. Элемент датчика по п.3, имеющий осевую симметрию 3 или 5 порядка.
8. Элемент датчика по п.4, имеющий осевую симметрию 3 или 5 порядка.
9. Элемент датчика по п.5, имеющий осевую симметрию 3 или 5 порядка.
10. Магнитный логический элемент, содержащий наномагнетики, имеющие геометрическую осевую симметрию вращения, выбранную так, что они являются суперпарамагнитными и имеют по существу нулевой гистерезис, так что намагниченность наномагнетиков зависит только от текущего значения приложенного поля, а не от предыстории поля.
11. Логический элемент по п.10, выполненный из искусственного магнитного материала, сформированного на поверхности подложки, причем ось по существу перпендикулярна указанной поверхности.
12. Логический элемент по одному из п.10 или 11, выполненный из супермаллоя (Ni80Fe14Mo5).
13. Логический элемент по одному из п.10 или 11, размер стороны которого находится в диапазоне 40-500 нм, а толщина - в диапазоне 3-10 нм.
14. Логический элемент по п.12, размер стороны которого находится в диапазоне 40-500 нм, а толщина - в диапазоне 3-10 нм.
15. Логический элемент по одному из п.10 или 11, имеющий осевую симметрию 3 или 5 порядка.
16. Логический элемент по п.12, имеющий осевую симметрию 3 или 5 порядка.
17. Логический элемент по п.13, имеющий осевую симметрию 3 или 5 порядка.
18. Логический элемент по п.14, имеющий осевую симметрию 3 или 5 порядка.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9908179.6 | 1999-04-09 | ||
| GBGB9908179.6A GB9908179D0 (en) | 1999-04-09 | 1999-04-09 | Magnetic materials |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2001130141/02A Division RU2244971C2 (ru) | 1999-04-09 | 2000-04-07 | Магнитные материалы |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2005112055/02A Division RU2005112055A (ru) | 1999-04-09 | 2005-04-21 | Магнитный логический элемент, содержащий наномагниты |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2004101439A true RU2004101439A (ru) | 2005-06-27 |
| RU2274917C2 RU2274917C2 (ru) | 2006-04-20 |
Family
ID=10851267
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2001130141/02A RU2244971C2 (ru) | 1999-04-09 | 2000-04-07 | Магнитные материалы |
| RU2004101439/02A RU2274917C2 (ru) | 1999-04-09 | 2004-01-16 | Элемент датчика, содержащий наномагниты |
| RU2005112055/02A RU2005112055A (ru) | 1999-04-09 | 2005-04-21 | Магнитный логический элемент, содержащий наномагниты |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2001130141/02A RU2244971C2 (ru) | 1999-04-09 | 2000-04-07 | Магнитные материалы |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2005112055/02A RU2005112055A (ru) | 1999-04-09 | 2005-04-21 | Магнитный логический элемент, содержащий наномагниты |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US6614084B1 (ru) |
| EP (3) | EP1598834B1 (ru) |
| JP (3) | JP4287062B2 (ru) |
| KR (1) | KR100699611B1 (ru) |
| CN (1) | CN1251251C (ru) |
| AT (3) | ATE408885T1 (ru) |
| AU (1) | AU763157B2 (ru) |
| CA (1) | CA2366588A1 (ru) |
| DE (3) | DE60031181T2 (ru) |
| DK (1) | DK1169720T3 (ru) |
| ES (1) | ES2225119T3 (ru) |
| GB (1) | GB9908179D0 (ru) |
| PT (1) | PT1169720E (ru) |
| RU (3) | RU2244971C2 (ru) |
| WO (1) | WO2000062311A1 (ru) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9925213D0 (en) | 1999-10-25 | 1999-12-22 | Univ Cambridge Tech | Magnetic logic elements |
| US8134441B1 (en) * | 2008-06-02 | 2012-03-13 | The Regents Of The University Of California | Nanomagnetic signal propagation and logic gates |
| US8138874B1 (en) | 2009-07-20 | 2012-03-20 | The Regents Of The University Of California | Nanomagnetic register |
| WO2011044100A2 (en) * | 2009-10-05 | 2011-04-14 | University Of Delaware | Ferromagnetic resonance and memory effect in magnetic composite materials |
| US9196280B2 (en) * | 2009-11-12 | 2015-11-24 | Marquette University | Low-field magnetic domain wall injection pad and high-density storage wire |
| KR200452028Y1 (ko) * | 2010-02-23 | 2011-02-01 | 정진시그널(주) | 투명 반사부를 갖는 도로 표지병 |
| US8766754B2 (en) | 2012-07-18 | 2014-07-01 | The Regents Of The University Of California | Concave nanomagnets with widely tunable anisotropy |
| US9460737B2 (en) | 2013-04-18 | 2016-10-04 | Headway Technologies, Inc. | Supermalloy and mu metal side and top shields for magnetic read heads |
| FR3031622B1 (fr) * | 2015-01-14 | 2018-02-16 | Centre National De La Recherche Scientifique | Point memoire magnetique |
| ES2833377T3 (es) * | 2015-06-04 | 2021-06-15 | Endomagnetics Ltd | Materiales marcadores y formas de localizar un marcador magnético |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0810653B2 (ja) * | 1990-11-22 | 1996-01-31 | 科学技術庁金属材料技術研究所長 | 磁性体微粒子の配列格子構造 |
| US5710436A (en) | 1994-09-27 | 1998-01-20 | Kabushiki Kaisha Toshiba | Quantum effect device |
| US5741435A (en) * | 1995-08-08 | 1998-04-21 | Nano Systems, Inc. | Magnetic memory having shape anisotropic magnetic elements |
| US5714536A (en) * | 1996-01-11 | 1998-02-03 | Xerox Corporation | Magnetic nanocompass compositions and processes for making and using |
| JPH09298320A (ja) * | 1996-05-09 | 1997-11-18 | Kobe Steel Ltd | 酸化物超電導コイル用永久電流スイッチおよびそれを用いたスイッチ装置並びにスイッチング方法 |
| US6451220B1 (en) * | 1997-01-21 | 2002-09-17 | Xerox Corporation | High density magnetic recording compositions and processes thereof |
| JPH10326920A (ja) * | 1997-03-26 | 1998-12-08 | Delta Tsuuring:Kk | 磁気抵抗効果センサー及びその製造方法 |
| JPH1179894A (ja) * | 1997-09-04 | 1999-03-23 | Mitsubishi Gas Chem Co Inc | ビスマス置換希土類鉄ガーネット単結晶膜 |
| US5898549A (en) * | 1997-10-27 | 1999-04-27 | International Business Machines Corporation | Anti-parallel-pinned spin valve sensor with minimal pinned layer shunting |
| JP3216605B2 (ja) * | 1998-07-06 | 2001-10-09 | 日本電気株式会社 | ドットアレー状磁性膜並びにこれを用いた磁気記録媒体及び磁気抵抗効果素子 |
| US6269018B1 (en) * | 2000-04-13 | 2001-07-31 | International Business Machines Corporation | Magnetic random access memory using current through MTJ write mechanism |
-
1999
- 1999-04-09 GB GBGB9908179.6A patent/GB9908179D0/en not_active Ceased
-
2000
- 2000-04-07 EP EP05016528A patent/EP1598834B1/en not_active Expired - Lifetime
- 2000-04-07 EP EP00919026A patent/EP1169720B1/en not_active Expired - Lifetime
- 2000-04-07 AT AT05016528T patent/ATE408885T1/de not_active IP Right Cessation
- 2000-04-07 PT PT00919026T patent/PT1169720E/pt unknown
- 2000-04-07 CN CNB008060711A patent/CN1251251C/zh not_active Expired - Fee Related
- 2000-04-07 DE DE60031181T patent/DE60031181T2/de not_active Expired - Lifetime
- 2000-04-07 US US09/958,318 patent/US6614084B1/en not_active Expired - Fee Related
- 2000-04-07 WO PCT/GB2000/001306 patent/WO2000062311A1/en active IP Right Grant
- 2000-04-07 ES ES00919026T patent/ES2225119T3/es not_active Expired - Lifetime
- 2000-04-07 JP JP2000611293A patent/JP4287062B2/ja not_active Expired - Fee Related
- 2000-04-07 DK DK00919026T patent/DK1169720T3/da active
- 2000-04-07 DE DE60012720T patent/DE60012720T2/de not_active Expired - Lifetime
- 2000-04-07 EP EP04006047A patent/EP1437746B1/en not_active Expired - Lifetime
- 2000-04-07 DE DE60040307T patent/DE60040307D1/de not_active Expired - Lifetime
- 2000-04-07 AT AT00919026T patent/ATE272889T1/de not_active IP Right Cessation
- 2000-04-07 KR KR1020017012844A patent/KR100699611B1/ko not_active IP Right Cessation
- 2000-04-07 AT AT04006047T patent/ATE341821T1/de not_active IP Right Cessation
- 2000-04-07 RU RU2001130141/02A patent/RU2244971C2/ru not_active IP Right Cessation
- 2000-04-07 AU AU39785/00A patent/AU763157B2/en not_active Ceased
- 2000-04-07 CA CA002366588A patent/CA2366588A1/en not_active Abandoned
-
2004
- 2004-01-16 RU RU2004101439/02A patent/RU2274917C2/ru not_active IP Right Cessation
-
2005
- 2005-04-21 RU RU2005112055/02A patent/RU2005112055A/ru not_active Application Discontinuation
-
2008
- 2008-04-25 JP JP2008115325A patent/JP2009002937A/ja active Pending
- 2008-04-25 JP JP2008115326A patent/JP2008288580A/ja not_active Withdrawn
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20070408 |