RO82571B1 - Dispozitiv stabilizator de tensiune termocontrolat si procedeu de fabricare - Google Patents
Dispozitiv stabilizator de tensiune termocontrolat si procedeu de fabricareInfo
- Publication number
- RO82571B1 RO82571B1 RO105184A RO10518481A RO82571B1 RO 82571 B1 RO82571 B1 RO 82571B1 RO 105184 A RO105184 A RO 105184A RO 10518481 A RO10518481 A RO 10518481A RO 82571 B1 RO82571 B1 RO 82571B1
- Authority
- RO
- Romania
- Prior art keywords
- layer
- diode
- initial
- type
- alloying
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 230000000087 stabilizing effect Effects 0.000 title abstract 2
- 239000006187 pill Substances 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Inventia se refera la un dispozitiv semiconductor stabilizator de tensiune termocontrolata si la un procedeu de fabricare a acestuia destinat obtinerii tensiunilor de referinta mai mari de 6 V cu variatie negativa si controlata cu temperatura. Dispozitivul stabilizator, conform inventiei, este constituit din doua pastile de siliciu de tip N pe care s-au realizat straturi dopate de tip N la ++ si respectiv p la + între stratul dopat de tip p la + si pastila initiala obtinându-se o dioda semiconductoare în direct, pastile care sunt unite între ele prin aliere cu un strat intermediar predepus, ceea ce duce la formarea unei diode Zener între stratul P la + rezultat din aliere si pastila N initiala, precum si a unei diode semiconductoare în direct între stratul p la + rezultat din aliere în cea de-a doua pastila si pastila N initiala, obtinându-se în final....
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO81105184A RO82571A2 (ro) | 1981-08-22 | 1981-08-22 | Dispozitiv stabilizator de tensiune termocontrolat si procedeu de fabdispozitiv stabilizator de tensiune termocontrolat si procedeu de fabricare |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RO81105184A RO82571A2 (ro) | 1981-08-22 | 1981-08-22 | Dispozitiv stabilizator de tensiune termocontrolat si procedeu de fabdispozitiv stabilizator de tensiune termocontrolat si procedeu de fabricare |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RO82571B1 true RO82571B1 (ro) | 1983-08-30 |
| RO82571A2 RO82571A2 (ro) | 1983-09-26 |
Family
ID=20110381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RO81105184A RO82571A2 (ro) | 1981-08-22 | 1981-08-22 | Dispozitiv stabilizator de tensiune termocontrolat si procedeu de fabdispozitiv stabilizator de tensiune termocontrolat si procedeu de fabricare |
Country Status (1)
| Country | Link |
|---|---|
| RO (1) | RO82571A2 (ro) |
-
1981
- 1981-08-22 RO RO81105184A patent/RO82571A2/ro unknown
Also Published As
| Publication number | Publication date |
|---|---|
| RO82571A2 (ro) | 1983-09-26 |
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