PT3886140T - Sistema de processamento de gás - Google Patents

Sistema de processamento de gás

Info

Publication number
PT3886140T
PT3886140T PT211737754T PT21173775T PT3886140T PT 3886140 T PT3886140 T PT 3886140T PT 211737754 T PT211737754 T PT 211737754T PT 21173775 T PT21173775 T PT 21173775T PT 3886140 T PT3886140 T PT 3886140T
Authority
PT
Portugal
Prior art keywords
processing system
gas processing
gas
processing
Prior art date
Application number
PT211737754T
Other languages
English (en)
Original Assignee
Lyten Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lyten Inc filed Critical Lyten Inc
Publication of PT3886140T publication Critical patent/PT3886140T/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/007—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by irradiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • B01D53/323—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00 by electrostatic effects or by high-voltage electric fields
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/806—Microwaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818—Employing electrical discharges or the generation of a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
    • B01J2219/0809—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes employing two or more electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0881—Two or more materials
    • B01J2219/0883—Gas-gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/12—Processes employing electromagnetic waves
    • B01J2219/1203—Incoherent waves
    • B01J2219/1206—Microwaves
    • B01J2219/1248—Features relating to the microwave cavity
    • B01J2219/1269—Microwave guides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/164—Preparation involving continuous processes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/18—Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/20—Graphite
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/40—Carbon monoxide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/50—Carbon dioxide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/80—Phosgene
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
PT211737754T 2016-11-15 2017-10-23 Sistema de processamento de gás PT3886140T (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/351,858 US9812295B1 (en) 2016-11-15 2016-11-15 Microwave chemical processing

Publications (1)

Publication Number Publication Date
PT3886140T true PT3886140T (pt) 2023-11-09

Family

ID=60189739

Family Applications (1)

Application Number Title Priority Date Filing Date
PT211737754T PT3886140T (pt) 2016-11-15 2017-10-23 Sistema de processamento de gás

Country Status (8)

Country Link
US (2) US9812295B1 (pt)
EP (3) EP3542391B1 (pt)
JP (1) JP6967591B2 (pt)
KR (1) KR102444096B1 (pt)
CN (2) CN110036457B (pt)
PT (1) PT3886140T (pt)
TW (1) TWI730195B (pt)
WO (1) WO2018093537A1 (pt)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018136502A1 (en) * 2017-01-19 2018-07-26 Board Of Trustees Of Michigan State University Magnetic field enhanced plasma for materials processing
US20210086158A1 (en) * 2017-04-07 2021-03-25 Nuionic Technologies Lp Microwave enhancement of chemical reactions
US11358869B2 (en) 2017-08-08 2022-06-14 H Quest Vanguard, Inc. Methods and systems for microwave assisted production of graphitic materials
US10472497B2 (en) * 2018-02-28 2019-11-12 Lyten, Inc. Composite materials systems containing carbon and resin
US20200263285A1 (en) 2018-08-02 2020-08-20 Lyten, Inc. Covetic materials
WO2020027973A1 (en) * 2018-08-02 2020-02-06 Lyten, Inc. Plasma spray systems and methods
AU2019325589B2 (en) 2018-08-23 2023-08-31 Transform Materials Llc Systems and methods for processing gases
US11633710B2 (en) 2018-08-23 2023-04-25 Transform Materials Llc Systems and methods for processing gases
DE102018132338B3 (de) * 2018-12-14 2019-11-21 Leibniz-Institut für Photonische Technologien e. V. Partikelfreies verfahren zur signifikanten reduzierung der oberflächenrauhigkeit von rohren, kapillaren und hohlfasern aus kieselglas oder hoch kieselhaltigen gläsern und optischen gläsern sowie zur reinigung von kavitätenoberflächen von rohren, kapillaren und hohlfasen aus kieselglas oder hoch kieselglashaltigen optischen gläsern
JP7042492B2 (ja) * 2018-12-26 2022-03-28 シーズテクノ株式会社 基板上のグラフェン膜の直接成膜法及び走査型プローブ顕微鏡用カンチレバー
CN113474473A (zh) * 2019-01-27 2021-10-01 利腾股份有限公司 Covetic材料
US20200312629A1 (en) 2019-03-25 2020-10-01 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability
JP7423233B2 (ja) * 2019-09-26 2024-01-29 株式会社ダイヘン 高周波電源装置及び高周波電力の出力方法
CN110677973A (zh) * 2019-11-07 2020-01-10 成都悦坤科技有限公司 微波等离子体废固裂解装置
US11623197B2 (en) * 2020-01-23 2023-04-11 Lyten, Inc. Complex modality reactor for materials production and synthesis
CN118772657A (zh) * 2020-02-06 2024-10-15 利腾股份有限公司 复合材料系统
US11680012B2 (en) 2020-08-04 2023-06-20 Lyten, Inc. Methods for manufacturing or strengthening carbon-containing glass materials
CN116075361A (zh) * 2020-08-31 2023-05-05 利腾股份有限公司 联接到能量发射器控制电路的反应器系统
PL436197A1 (pl) * 2020-12-02 2022-06-06 Instytut Niskich Temperatur I Badań Strukturalnych Im. Włodzimierza Trzebiatowskiego Polskiej Akademii Nauk Sposób i urządzenie do wytwarzania wodoru
CN114752915B (zh) * 2021-01-11 2024-01-19 宁波材料所杭州湾研究院 一种制备沉积材料的方法、化学气相沉积装置
WO2023003893A1 (en) 2021-07-22 2023-01-26 Lyten, Inc. Biofunctionalized three-dimensional (3d) graphene-based field-effect transistor (fet) sensor
US11826718B2 (en) 2021-08-18 2023-11-28 Lyten, Inc. Negative emission, large scale carbon capture during clean hydrogen fuel synthesis
US11613817B2 (en) * 2021-08-18 2023-03-28 Lyten, Inc. Negative emission, large scale carbon capture for clean fossil fuel power generation
GB2620597A (en) * 2022-07-12 2024-01-17 Levidian Nanosystems Ltd Apparatus and method for producing graphene and hydrogen
CH720593A1 (de) * 2023-03-08 2024-09-13 Microwave Solutions Gmbh Dissoziationsverfahren und system zur dissoziation von kohlendioxid und/oder methan

Family Cites Families (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706445A (en) 1971-09-30 1972-12-19 Granco Equipment Fume incinerator
US6914556B1 (en) 1977-05-31 2005-07-05 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for magnetron coherence
FR2572847B1 (fr) 1984-11-06 1986-12-26 Commissariat Energie Atomique Procede et dispositif d'allumage d'une source d'ions hyperfrequence
US5126635A (en) * 1988-04-08 1992-06-30 Energy Conversion Devices, Inc. Microwave plasma operation using a high power microwave transmissive window assembly
US5015349A (en) * 1988-12-23 1991-05-14 University Of Connecticut Low power density microwave discharge plasma excitation energy induced chemical reactions
US5324553A (en) 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
US5556475A (en) 1993-06-04 1996-09-17 Applied Science And Technology, Inc. Microwave plasma reactor
US5515011A (en) 1993-08-02 1996-05-07 Litton Systems Inc. Pulsed magnetron circuit with phase locked loop
US5572866A (en) 1994-04-29 1996-11-12 Environmental Thermal Oxidizers, Inc. Pollution abatement incinerator system
GB9414561D0 (en) 1994-07-19 1994-09-07 Ea Tech Ltd Method of and apparatus for microwave-plasma production
US5693173A (en) 1994-12-21 1997-12-02 Chorus Corporation Thermal gas cracking source technology
EP0880562B1 (en) 1996-02-06 2000-12-06 E.I. Du Pont De Nemours And Company Treatment of deagglomerated particles with plasma-activated species
FR2751830B1 (fr) 1996-07-23 1998-10-23 Prolabo Sa Dispositif pour realiser des reactions chimiques sous micro-ondes sur une grande quantite de produits
WO1999012184A2 (en) 1997-09-05 1999-03-11 Alcad Pro, Inc. Microwave power applicator for generating reactive chemical species from gaseous reagent species
FR2780601B1 (fr) * 1998-06-24 2000-07-21 Commissariat Energie Atomique Procede de depot par plasma a la resonance cyclotron electronique de couches de carbone emetteur d'electrons sous l'effet d'un champ electrique applique
US6340912B1 (en) 1998-07-02 2002-01-22 Raytheon Company Solid state magnetron switcher
US6383301B1 (en) 1998-08-04 2002-05-07 E. I. Du Pont De Nemours And Company Treatment of deagglomerated particles with plasma-activated species
JP4107736B2 (ja) 1998-11-16 2008-06-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US6689252B1 (en) * 1999-07-28 2004-02-10 Applied Materials, Inc. Abatement of hazardous gases in effluent
CA2379892A1 (en) * 1999-07-29 2001-02-08 David Systems & Technology S.L. Plasma converter of fossil fuels into hydrogen-rich gas
AU2295100A (en) 1999-07-29 2001-02-19 David Systems Technology S.L. Plasma transformer for the transformation of fossil fuels into hydrogen-rich gas
JP2001122690A (ja) 1999-10-26 2001-05-08 Toyo Kohan Co Ltd マイクロ波プラズマｃｖｄ装置及びダイヤモンド薄膜を形成する方法
FR2815888B1 (fr) 2000-10-27 2003-05-30 Air Liquide Dispositif de traitement de gaz par plasma
WO2002048630A1 (en) 2000-12-13 2002-06-20 Texaco Development Corporation Single chamber compact fuel processor
JP2002299323A (ja) 2001-03-30 2002-10-11 Daihen Corp プラズマ発生装置
JP4109952B2 (ja) 2001-10-04 2008-07-02 キヤノン株式会社 ナノカーボン材料の製造方法
AU2002365227A1 (en) 2001-11-14 2003-09-02 Blacklight Power, Inc. Hydrogen power, plasma, and reactor for lasing, and power conversion
AU2002352814A1 (en) 2001-11-20 2003-06-10 Andrew R. Barron Coated fullerenes, composites and dielectrics made therefrom
US20040265211A1 (en) 2001-12-14 2004-12-30 Dillon Anne C. Hot wire production of single-wall carbon nanotubes
CA2365785A1 (en) 2001-12-19 2003-06-19 Louis Obidniak Pyrolysis system
AU2003234476A1 (en) 2002-05-08 2003-11-11 Dana Corporation Plasma-assisted nitrogen surface-treatment
KR20050053595A (ko) * 2002-07-23 2005-06-08 이프라스 게엠베하 기체 반응을 실시하기 위한 플라즈마 반응기, 및 가스의플라즈마 조장된 반응을 위한 방법
US7582845B2 (en) * 2003-03-12 2009-09-01 Toyo Seikan Kaisha Ltd. Microwave plasma processing device and plasma processing gas supply member
US6805779B2 (en) 2003-03-21 2004-10-19 Zond, Inc. Plasma generation using multi-step ionization
GB2417953A (en) 2003-04-15 2006-03-15 Black Light Power Inc Plasma reactor and process for producing lower-energy hydrogen species
JP4255061B2 (ja) 2003-05-23 2009-04-15 財団法人浜松科学技術研究振興会 マイクロ波プラズマ発生方法およびマイクロ波プラズマ発生装置
US7261779B2 (en) 2003-06-05 2007-08-28 Lockheed Martin Corporation System, method, and apparatus for continuous synthesis of single-walled carbon nanotubes
US20050003247A1 (en) 2003-07-01 2005-01-06 Ai-Quoc Pham Co-production of hydrogen and electricity using pyrolysis and fuel cells
US7981396B2 (en) 2003-12-03 2011-07-19 Honda Motor Co., Ltd. Methods for production of carbon nanostructures
JP2005235464A (ja) * 2004-02-17 2005-09-02 Toshio Goto プラズマ発生装置
EP2135625B1 (en) 2004-03-19 2013-04-24 Japan Science and Technology Agency Microwave plasma sterilizing device and method
JP4204505B2 (ja) 2004-03-31 2009-01-07 日本高周波株式会社 マグネトロン発振装置
JP4693470B2 (ja) 2004-04-12 2011-06-01 三星エスディアイ株式会社 リチウム二次電池用負極活物質、及びこれを含む負極、及びリチウム二次電池
JP4718189B2 (ja) 2005-01-07 2011-07-06 東京エレクトロン株式会社 プラズマ処理方法
EP1623957B1 (de) 2005-02-10 2008-02-06 Electrovac AG Verfahren und Vorrichtung zur Herstellung von Wasserstoff
US20060185595A1 (en) 2005-02-23 2006-08-24 Coll Bernard F Apparatus and process for carbon nanotube growth
JP4134077B2 (ja) * 2005-03-23 2008-08-13 株式会社アドテック プラズマ テクノロジー マイクロ波ラインプラズマ発生装置
US7833505B2 (en) 2005-04-13 2010-11-16 Continental Carbon Company Methods and systems for synthesis on nanoscale materials
EP1712522A1 (en) 2005-04-14 2006-10-18 Robert Prof. Dr. Schlögl Nanosized carbon material-activated carbon composite
TW200714140A (en) * 2005-09-19 2007-04-01 Ind Tech Res Inst Microwave plasma excitation device
JP5328008B2 (ja) * 2006-03-31 2013-10-30 島根県 炭素材料の製造方法
US7601294B2 (en) * 2006-05-02 2009-10-13 Babcock & Wilcox Technical Services Y-12, Llc High volume production of nanostructured materials
US7588746B1 (en) 2006-05-10 2009-09-15 University Of Central Florida Research Foundation, Inc. Process and apparatus for hydrogen and carbon production via carbon aerosol-catalyzed dissociation of hydrocarbons
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
US8748785B2 (en) * 2007-01-18 2014-06-10 Amastan Llc Microwave plasma apparatus and method for materials processing
US8075869B2 (en) 2007-01-24 2011-12-13 Eden Energy Ltd. Method and system for producing a hydrogen enriched fuel using microwave assisted methane decomposition on catalyst
FI120450B (fi) 2007-03-21 2009-10-30 Beneq Oy Laite nanoputkien tuottamiseksi
TWI341335B (en) * 2007-03-27 2011-05-01 Univ Nat Taipei Technology Apparatus, method and product for synthesizing carbon films using microwave plasma jet
JP2008270013A (ja) * 2007-04-23 2008-11-06 Nippon Telegr & Teleph Corp <Ntt> プラズマ処理装置
EP2086285A1 (en) 2008-02-01 2009-08-05 Anton Paar GmbH Applicator and Apparatus for heating samples by microwave radiation
DE602008005858D1 (de) 2008-03-20 2011-05-12 Univ Ruhr Bochum Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen
US8257867B2 (en) 2008-07-28 2012-09-04 Battelle Memorial Institute Nanocomposite of graphene and metal oxide materials
US7923491B2 (en) 2008-08-08 2011-04-12 Exxonmobil Chemical Patents Inc. Graphite nanocomposites
US8216541B2 (en) 2008-09-03 2012-07-10 Nanotek Instruments, Inc. Process for producing dispersible and conductive nano graphene platelets from non-oxidized graphitic materials
DE102008053027A1 (de) 2008-10-24 2010-04-29 Kme Germany Ag & Co. Kg Verfahren zum Herstellen einer Kohlenstoff-Nanoröhren,Fullerene und/oder Graphene enthaltenden Beschichtung
GB0902784D0 (en) 2009-02-19 2009-04-08 Gasplas As Plasma reactor
EP2411328B1 (en) 2009-03-26 2019-07-24 Northeastern University Carbon nanostructures from pyrolysis of organic materials
US8872154B2 (en) * 2009-04-06 2014-10-28 Purdue Research Foundation Field effect transistor fabrication from carbon nanotubes
US9545609B2 (en) 2009-08-13 2017-01-17 Tekgar, Llv Pyrolysis oil made with a microwave-transparent reaction chamber for production of fuel from an organic-carbon-containing feedstock
US20120258374A1 (en) 2009-09-10 2012-10-11 The University Western Australia Process for Producing Hydrogen from Hydrocarbons
US9441076B2 (en) 2009-11-12 2016-09-13 The Trustees Of Princeton University Multifunctional graphene-silicone elastomer nanocomposite, method of making the same, and uses thereof
JP5523977B2 (ja) 2010-08-06 2014-06-18 三菱重工業株式会社 真空処理装置およびプラズマ処理方法
US8691441B2 (en) 2010-09-07 2014-04-08 Nanotek Instruments, Inc. Graphene-enhanced cathode materials for lithium batteries
JP5762708B2 (ja) 2010-09-16 2015-08-12 国立大学法人名古屋大学 プラズマ生成装置、プラズマ処理装置及びプラズマ処理方法
KR101939615B1 (ko) 2011-02-10 2019-01-17 고쿠리츠겐큐가이하츠호진 산교기쥬츠소고겐큐쇼 그래핀의 제조 방법 및 그래핀
JP5653822B2 (ja) * 2011-04-04 2015-01-14 トヨタ自動車株式会社 カーボンナノチューブの製造方法
CN102757038B (zh) 2011-04-28 2014-02-26 中国科学院宁波材料技术与工程研究所 一种制备石墨烯的方法
WO2012147771A1 (ja) 2011-04-28 2012-11-01 東海ゴム工業株式会社 マイクロ波プラズマ生成装置、およびそれを用いたマグネトロンスパッタ成膜装置
GB2490355B (en) 2011-04-28 2015-10-14 Gasplas As Method for processing a gas and a device for performing the method
US8808507B2 (en) 2011-08-02 2014-08-19 Scandinavian Biofuel Company As Microwave assisted flash pyrolysis system and method using the same
CN102510654A (zh) * 2011-10-18 2012-06-20 大连理工大学 大气压脉冲调制微波等离子体发生装置
SG11201503710XA (en) 2011-11-18 2015-06-29 Univ Rice William M Graphene-carbon nanotube hybrid materials and use as electrodes
US8734683B2 (en) 2011-11-29 2014-05-27 Xerox Corporation Graphene nano-sheets and methods for making the same
JP6404121B2 (ja) 2011-12-12 2018-10-10 ヴォーベック・マテリアルズ・コーポレーション グラフェン及び補強材を含むゴム組成物、並びにそれから作られる物品
US9059466B2 (en) 2012-03-22 2015-06-16 Chun-Chieh Chang Direct synthesis of lithium ion battery electrode materials using graphene treated raw materials as the reactant
US8968588B2 (en) * 2012-03-30 2015-03-03 Tokyo Electron Limited Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus
US20130296479A1 (en) 2012-05-03 2013-11-07 Ppg Industries Ohio, Inc. Rubber formulations including graphenic carbon particles
KR101413237B1 (ko) 2012-05-21 2014-06-27 한국과학기술연구원 고유전 탄성중합체 및 그 제조방법
TWI638770B (zh) 2012-09-18 2018-10-21 美商艾克頌美孚上游研究公司 用於製造碳同素異形體之反應器系統
EP2719270A1 (de) 2012-10-11 2014-04-16 BYK-Chemie GmbH Beschichtungszusammensetzung und deren Verwendung
DE102012111900A1 (de) 2012-12-06 2014-06-26 Krones Ag Vorrichtung und Verfahren zum Cracken von Gasen
GB2514312B (en) 2012-12-13 2016-08-31 Future Blends Ltd Filter and process for producing liquid products from biomass pyrolysis products
JP5725574B2 (ja) 2013-03-05 2015-05-27 東京エレクトロン株式会社 マイクロ波導波装置、プラズマ処理装置及びプラズマ処理方法
US9427821B2 (en) 2013-03-15 2016-08-30 Agilent Technologies, Inc. Integrated magnetron plasma torch, and related methods
US10010874B2 (en) * 2013-05-24 2018-07-03 Hindustan Petroleum Corporation Ltd. Catalytic decomposition of lower hydrocarbons to produce carbon oxides free hydrogen and bamboo shaped carbon nanotubes
US9564630B2 (en) 2013-08-08 2017-02-07 Nantek Instuments, Inc. Anode active material-coated graphene sheets for lithium batteries and process for producing same
KR101540067B1 (ko) 2013-09-12 2015-07-30 한국과학기술연구원 플렉시블 전자소재용 탄성중합체-전도성 필러 복합체 및 이의 제조방법
KR101800486B1 (ko) 2013-12-06 2017-11-22 주식회사 엘지화학 전도성이 개선된 복합재 및 이를 함유하는 성형품
US9711256B2 (en) 2013-12-24 2017-07-18 Cheorwon Plasma Research Institute Graphene-nano particle composite having nanoparticles crystallized therein at a high density
GB2531233A (en) * 2014-02-27 2016-04-20 C Tech Innovation Ltd Plasma enhanced catalytic conversion method and apparatus
US9653253B2 (en) * 2014-03-07 2017-05-16 Advanced Ion Beam Technology, Inc. Plasma-based material modification using a plasma source with magnetic confinement
GB201405614D0 (en) 2014-03-28 2014-05-14 Perpetuus Res & Dev Ltd Particles
EP3152346A4 (en) 2014-06-06 2018-03-28 NanoXplore Inc. Large scale production of thinned graphite, graphene, and graphite-graphene composites
GB201410639D0 (en) 2014-06-13 2014-07-30 Fgv Cambridge Nanosystems Ltd Apparatus and method for plasma synthesis of graphitic products including graphene
GB201410703D0 (en) 2014-06-16 2014-07-30 Element Six Technologies Ltd A microwave plasma reactor for manufacturing synthetic diamond material
KR102394940B1 (ko) 2014-07-03 2022-05-09 쿨브루크 오와이 공정 및 회전 기계형 반응기
US20180327611A1 (en) 2014-07-30 2018-11-15 Vorbeck Materials Corp. Conductive compositions
MX2017010952A (es) 2015-02-27 2018-06-06 Imerys Graphite & Carbon Switzerland Ltd Material carbonoso con superficie modificada por nanopartículas y métodos para producir dicho material.
CN105870419B (zh) 2016-05-25 2018-04-13 广东石油化工学院 一种石墨烯/富勒烯复合纳米材料的制备方法及其应用
CN106398802A (zh) 2016-09-07 2017-02-15 济南大学 一种石墨烯负载球形无机类富勒烯二硫化钼的激光快速制备方法
CN110072607A (zh) * 2016-10-06 2019-07-30 利腾股份有限公司 具有气固分离的微波反应器系统
US9767992B1 (en) 2017-02-09 2017-09-19 Lyten, Inc. Microwave chemical processing reactor
US9862602B1 (en) 2017-03-27 2018-01-09 Lyten, Inc. Cracking of a process gas
US9862606B1 (en) 2017-03-27 2018-01-09 Lyten, Inc. Carbon allotropes

Also Published As

Publication number Publication date
US9812295B1 (en) 2017-11-07
CN110036457A (zh) 2019-07-19
JP2019537826A (ja) 2019-12-26
KR20190089000A (ko) 2019-07-29
CN114700008B (zh) 2024-01-26
WO2018093537A1 (en) 2018-05-24
EP4249562A3 (en) 2023-11-15
EP3886140A1 (en) 2021-09-29
EP4249562A2 (en) 2023-09-27
TWI730195B (zh) 2021-06-11
TW201820938A (zh) 2018-06-01
EP3542391A4 (en) 2020-07-08
US20180138017A1 (en) 2018-05-17
KR102444096B1 (ko) 2022-09-16
CN114700008A (zh) 2022-07-05
US10332726B2 (en) 2019-06-25
EP3542391A1 (en) 2019-09-25
EP3542391B1 (en) 2021-07-28
EP3886140B1 (en) 2023-08-23
CN110036457B (zh) 2022-04-08
JP6967591B2 (ja) 2021-11-17

Similar Documents

Publication Publication Date Title
PT3886140T (pt) Sistema de processamento de gás
HK1246941A1 (zh) 訂單處理方法及系統
IL261000B (en) Cyber security system
IL257409B (en) Transport system
SG10201600648YA (en) Wafer processing system
GB2555576B (en) Evacuation system
EP4027134C0 (en) INSPECTION SYSTEM
SG10201704247PA (en) Wafer processing system
HK1255588B (zh) 處理系統
GB201807888D0 (en) Exhaust system
SG11201704241YA (en) Ammonia processing system
GB201706851D0 (en) Exhaust system
GB201706819D0 (en) Exhaust system
IL259859A (en) Transport system
GB2546273B (en) Detection system
GB201601430D0 (en) Exhaust system
GB201713486D0 (en) Collision-warning system
GB2535792B (en) Graphic processing systems
PL3464736T3 (pl) Układ elementu zużywalnego
GB201602324D0 (en) An exhaust system
EP3276489A4 (en) Parallel processing system
GB201502953D0 (en) Exhaust system
GB201500439D0 (en) Exhaust processing unit
GB2546636B (en) Evacuation system
GB201617213D0 (en) Telescopic-lateral system