PL3796428T3 - Elektroda ujemna dla akumulatora litowego, zawierający ją akumulator litowy i sposób jej wytwarzania - Google Patents
Elektroda ujemna dla akumulatora litowego, zawierający ją akumulator litowy i sposób jej wytwarzaniaInfo
- Publication number
- PL3796428T3 PL3796428T3 PL19878789.7T PL19878789T PL3796428T3 PL 3796428 T3 PL3796428 T3 PL 3796428T3 PL 19878789 T PL19878789 T PL 19878789T PL 3796428 T3 PL3796428 T3 PL 3796428T3
- Authority
- PL
- Poland
- Prior art keywords
- secondary battery
- lithium secondary
- manufacturing
- negative electrode
- same
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/405—Oxides of refractory metals or yttrium
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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- H01M10/058—Construction or manufacture
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- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/381—Alkaline or alkaline earth metals elements
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- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180132011A KR102459678B1 (ko) | 2018-10-31 | 2018-10-31 | 리튬 이차 전지용 음극, 이를 포함하는 리튬 이차 전지 및 이의 제조방법 |
PCT/KR2019/012542 WO2020091234A1 (ko) | 2018-10-31 | 2019-09-26 | 리튬 이차 전지용 음극, 이를 포함하는 리튬 이차 전지 및 이의 제조방법 |
Publications (1)
Publication Number | Publication Date |
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PL3796428T3 true PL3796428T3 (pl) | 2022-08-22 |
Family
ID=70464721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PL19878789.7T PL3796428T3 (pl) | 2018-10-31 | 2019-09-26 | Elektroda ujemna dla akumulatora litowego, zawierający ją akumulator litowy i sposób jej wytwarzania |
Country Status (7)
Country | Link |
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US (1) | US20210242457A1 (pl) |
EP (1) | EP3796428B1 (pl) |
JP (1) | JP7090807B2 (pl) |
KR (1) | KR102459678B1 (pl) |
CN (1) | CN112292771A (pl) |
PL (1) | PL3796428T3 (pl) |
WO (1) | WO2020091234A1 (pl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102439128B1 (ko) * | 2018-07-06 | 2022-09-02 | 주식회사 엘지에너지솔루션 | 리튬 이차전지용 음극, 이의 전리튬화 방법 및 이를 포함하는 리튬 이차전지 |
KR102460812B1 (ko) * | 2020-07-21 | 2022-11-03 | 주식회사 엘지에너지솔루션 | 리튬화 지연층이 도입된 리튬 이차전지용 음극 및 이의 제조방법 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH08208776A (ja) * | 1995-02-07 | 1996-08-13 | Nippon Kayaku Co Ltd | 樹脂組成物、レンズ用組成物及びその硬化物 |
JP3697812B2 (ja) * | 1997-01-28 | 2005-09-21 | 宇部興産株式会社 | リチウム二次電池の製造方法 |
JP2000182602A (ja) | 1998-12-14 | 2000-06-30 | Fuji Photo Film Co Ltd | 非水二次電池 |
JP4465578B2 (ja) * | 2002-11-15 | 2010-05-19 | ソニー株式会社 | リチウムイオン二次電池用負極およびリチウムイオン二次電池、並びにそれらの製造方法 |
JP5008180B2 (ja) | 2006-02-13 | 2012-08-22 | 日立マクセルエナジー株式会社 | 非水二次電池 |
JP5151188B2 (ja) * | 2006-03-09 | 2013-02-27 | パナソニック株式会社 | 転写用フィルム、およびそれを用いて形成された電気化学素子用の極板ならびにリチウム二次電池 |
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-
2018
- 2018-10-31 KR KR1020180132011A patent/KR102459678B1/ko active IP Right Grant
-
2019
- 2019-09-26 WO PCT/KR2019/012542 patent/WO2020091234A1/ko unknown
- 2019-09-26 US US17/255,670 patent/US20210242457A1/en active Pending
- 2019-09-26 JP JP2021519520A patent/JP7090807B2/ja active Active
- 2019-09-26 CN CN201980039436.2A patent/CN112292771A/zh active Pending
- 2019-09-26 EP EP19878789.7A patent/EP3796428B1/en active Active
- 2019-09-26 PL PL19878789.7T patent/PL3796428T3/pl unknown
Also Published As
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CN112292771A (zh) | 2021-01-29 |
EP3796428A4 (en) | 2021-08-11 |
EP3796428B1 (en) | 2022-06-08 |
KR20200050054A (ko) | 2020-05-11 |
KR102459678B1 (ko) | 2022-10-28 |
WO2020091234A1 (ko) | 2020-05-07 |
US20210242457A1 (en) | 2021-08-05 |
JP7090807B2 (ja) | 2022-06-24 |
JP2021527937A (ja) | 2021-10-14 |
EP3796428A1 (en) | 2021-03-24 |
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