PL3666934T3 - Urządzenie do produkcji wlewków i sposób produkcji wlewków z węglika krzemu przy użyciu tego urządzenia - Google Patents

Urządzenie do produkcji wlewków i sposób produkcji wlewków z węglika krzemu przy użyciu tego urządzenia

Info

Publication number
PL3666934T3
PL3666934T3 PL19190145.3T PL19190145T PL3666934T3 PL 3666934 T3 PL3666934 T3 PL 3666934T3 PL 19190145 T PL19190145 T PL 19190145T PL 3666934 T3 PL3666934 T3 PL 3666934T3
Authority
PL
Poland
Prior art keywords
ingot
producing
silicon carbide
producing silicon
carbide ingot
Prior art date
Application number
PL19190145.3T
Other languages
English (en)
Inventor
Byung Kyu Jang
Jung-Gyu Kim
Jung Woo Choi
Kap-Ryeol KU
Sang Ki Ko
Original Assignee
Senic Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senic Inc. filed Critical Senic Inc.
Publication of PL3666934T3 publication Critical patent/PL3666934T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL19190145.3T 2018-12-12 2019-08-06 Urządzenie do produkcji wlewków i sposób produkcji wlewków z węglika krzemu przy użyciu tego urządzenia PL3666934T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180159996A KR102122668B1 (ko) 2018-12-12 2018-12-12 잉곳의 제조장치 및 이를 이용한 탄화규소 잉곳의 제조방법

Publications (1)

Publication Number Publication Date
PL3666934T3 true PL3666934T3 (pl) 2024-02-26

Family

ID=67551108

Family Applications (1)

Application Number Title Priority Date Filing Date
PL19190145.3T PL3666934T3 (pl) 2018-12-12 2019-08-06 Urządzenie do produkcji wlewków i sposób produkcji wlewków z węglika krzemu przy użyciu tego urządzenia

Country Status (8)

Country Link
US (1) US11078599B2 (pl)
EP (1) EP3666934B1 (pl)
JP (1) JP6856705B2 (pl)
KR (1) KR102122668B1 (pl)
CN (1) CN111304745B (pl)
HU (1) HUE064789T2 (pl)
PL (1) PL3666934T3 (pl)
TW (1) TWI714152B (pl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT524251B1 (de) * 2020-09-28 2023-04-15 Ebner Ind Ofenbau Vorrichtung zum Züchten von Einkristallen

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637354B2 (ja) * 1990-04-16 1994-05-18 新日本製鐵株式会社 炭化珪素単結晶成長方法および装置
JP4288792B2 (ja) 1999-10-15 2009-07-01 株式会社デンソー 単結晶製造方法及び単結晶製造装置
JP4903946B2 (ja) * 2000-12-28 2012-03-28 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法及び製造装置
JP4275308B2 (ja) * 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置
KR100675912B1 (ko) 2006-01-02 2007-02-01 학교법인 동의학원 종자정 부착 장치 및 종자정 부착 방법
WO2007080881A1 (ja) * 2006-01-12 2007-07-19 Sumitomo Electric Industries, Ltd. 窒化アルミニウム結晶の製造方法、窒化アルミニウム結晶、窒化アルミニウム結晶基板および半導体デバイス
JP4962186B2 (ja) 2007-07-20 2012-06-27 株式会社デンソー 炭化珪素単結晶の製造方法および製造装置
JP4992647B2 (ja) * 2007-10-05 2012-08-08 住友電気工業株式会社 窒化アルミニウム結晶の成長方法および結晶成長装置
JP4547031B2 (ja) 2009-03-06 2010-09-22 新日本製鐵株式会社 炭化珪素単結晶製造用坩堝、並びに炭化珪素単結晶の製造装置及び製造方法
JP2011184208A (ja) * 2010-03-04 2011-09-22 Bridgestone Corp 炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法
JP2011190129A (ja) * 2010-03-12 2011-09-29 Bridgestone Corp 炭化ケイ素単結晶の製造装置
JP2011251884A (ja) * 2010-06-03 2011-12-15 Bridgestone Corp 炭化ケイ素単結晶の製造装置
CN102534805B (zh) * 2010-12-14 2014-08-06 北京天科合达蓝光半导体有限公司 一种碳化硅晶体退火工艺
KR20120119365A (ko) * 2011-04-21 2012-10-31 엘지이노텍 주식회사 잉곳 제조 장치
JP5613619B2 (ja) * 2011-05-24 2014-10-29 昭和電工株式会社 炭化珪素単結晶製造装置、及び炭化珪素単結晶の製造方法
CN103173863B (zh) * 2011-12-23 2016-02-10 上海硅酸盐研究所中试基地 大尺寸碳化硅单晶生长装置
US8758510B2 (en) * 2011-12-28 2014-06-24 Sicrystal Aktiengesellschaft Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
US8747982B2 (en) * 2011-12-28 2014-06-10 Sicrystal Aktiengesellschaft Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
CN102605421A (zh) * 2012-04-01 2012-07-25 北京华进创威电子有限公司 一种单晶随炉等温退火方法及工装
JP5397503B2 (ja) 2012-05-30 2014-01-22 三菱電機株式会社 単結晶成長装置
DE112013006489B4 (de) * 2013-01-23 2018-07-05 Lg Siltron Incorporated Einkristallblock, Vorrichtungen und Verfahren zur Herstellung desselben
US9738991B2 (en) * 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
CN103603037A (zh) * 2013-11-26 2014-02-26 河北同光晶体有限公司 碳化硅籽晶粘接装置
WO2015182246A1 (ja) * 2014-05-29 2015-12-03 住友電気工業株式会社 炭化珪素インゴットの製造方法、炭化珪素種基板および炭化珪素基板
JP2015229608A (ja) * 2014-06-04 2015-12-21 株式会社フジクラ 単結晶製造装置
US9279192B2 (en) * 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
KR101640313B1 (ko) * 2014-11-14 2016-07-18 오씨아이 주식회사 잉곳 제조 장치
JP6584007B2 (ja) * 2015-12-10 2019-10-02 昭和電工株式会社 単結晶の製造方法および単結晶製造装置

Also Published As

Publication number Publication date
US20200190698A1 (en) 2020-06-18
JP2020093970A (ja) 2020-06-18
CN111304745A (zh) 2020-06-19
JP6856705B2 (ja) 2021-04-07
EP3666934A1 (en) 2020-06-17
US11078599B2 (en) 2021-08-03
EP3666934B1 (en) 2023-10-11
CN111304745B (zh) 2021-12-03
HUE064789T2 (hu) 2024-04-28
KR102122668B1 (ko) 2020-06-12
TWI714152B (zh) 2020-12-21
TW202022175A (zh) 2020-06-16

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