PL3221898T3 - Dwu- i trójwarstwowe międzyfazowe warstwy w urządzeniach z materiału perowskitowego - Google Patents
Dwu- i trójwarstwowe międzyfazowe warstwy w urządzeniach z materiału perowskitowegoInfo
- Publication number
- PL3221898T3 PL3221898T3 PL15860737T PL15860737T PL3221898T3 PL 3221898 T3 PL3221898 T3 PL 3221898T3 PL 15860737 T PL15860737 T PL 15860737T PL 15860737 T PL15860737 T PL 15860737T PL 3221898 T3 PL3221898 T3 PL 3221898T3
- Authority
- PL
- Poland
- Prior art keywords
- tri
- perovskite material
- interfacial layers
- material devices
- layer interfacial
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/204—Light-sensitive devices comprising an oxide semiconductor electrode comprising zinc oxides, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462083063P | 2014-11-21 | 2014-11-21 | |
US14/711,391 US9416279B2 (en) | 2013-11-26 | 2015-05-13 | Bi- and tri-layer interfacial layers in perovskite material devices |
PCT/US2015/061467 WO2016081682A1 (en) | 2014-11-21 | 2015-11-19 | Bi-and tri-layer interfacial layers in perovskite material devices |
EP15860737.4A EP3221898B1 (en) | 2014-11-21 | 2015-11-19 | Bi-and tri-layer interfacial layers in perovskite material devices |
Publications (1)
Publication Number | Publication Date |
---|---|
PL3221898T3 true PL3221898T3 (pl) | 2021-02-08 |
Family
ID=56014543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL15860737T PL3221898T3 (pl) | 2014-11-21 | 2015-11-19 | Dwu- i trójwarstwowe międzyfazowe warstwy w urządzeniach z materiału perowskitowego |
Country Status (12)
Country | Link |
---|---|
EP (3) | EP4422379A2 (pl) |
JP (4) | JP2018503971A (pl) |
KR (10) | KR102291847B1 (pl) |
CN (2) | CN107210134A (pl) |
AU (6) | AU2015349902B2 (pl) |
BR (2) | BR122020016555B1 (pl) |
CA (2) | CA3187474A1 (pl) |
ES (1) | ES2812758T3 (pl) |
MX (2) | MX2017006646A (pl) |
MY (1) | MY181178A (pl) |
PL (1) | PL3221898T3 (pl) |
WO (1) | WO2016081682A1 (pl) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11180660B2 (en) | 2013-11-26 | 2021-11-23 | Cubic Perovskite Llc | Mixed cation perovskite material devices |
WO2018011597A1 (en) * | 2016-07-15 | 2018-01-18 | Cristal Pigment Uk Limited | Solar cell materials for increased efficiency |
JP6495392B2 (ja) * | 2016-08-16 | 2019-04-03 | 旭化成株式会社 | 組成物 |
CN106206956B (zh) * | 2016-09-07 | 2018-12-04 | 中国工程物理研究院材料研究所 | 一种含铜离子钙钛矿薄膜的制备方法 |
CN106413146A (zh) * | 2016-09-08 | 2017-02-15 | 芜湖桑乐金电子科技有限公司 | 一种高温防潮碳晶板材及其制备方法 |
TWI718353B (zh) | 2017-12-13 | 2021-02-11 | 財團法人工業技術研究院 | 鈣鈦礦太陽能電池與堆疊型太陽能電池 |
CN108198939B (zh) * | 2017-12-15 | 2021-06-18 | 浙江海洋大学 | 一种基于多层掺杂镁铝的氧化锌复合薄膜作为电子传输层的有机太阳能电池 |
JP7042337B2 (ja) * | 2018-06-07 | 2022-03-25 | 京セラ株式会社 | 太陽電池素子 |
CN111223989B (zh) * | 2018-11-23 | 2023-04-18 | 国家纳米科学中心 | 一种两性分子修饰的钙钛矿光伏器件及其制备方法和用途 |
KR102617709B1 (ko) * | 2018-11-30 | 2023-12-22 | 엘지디스플레이 주식회사 | 페로브스카이트 발광 소자 |
KR102228799B1 (ko) * | 2019-10-18 | 2021-03-18 | 울산과학기술원 | 고효율 대면적 페로브스카이트 태양전지 및 이의 제조방법 |
KR102233022B1 (ko) * | 2019-10-23 | 2021-03-30 | 울산과학기술원 | 공액고분자 전해질 전하수송층을 갖는 고효율 대면적 페로브스카이트 태양전지 및 이의 제조방법 |
CN113130768A (zh) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | 复合材料及其制备方法、光伏器件和发光二极管 |
JP2021180277A (ja) * | 2020-05-15 | 2021-11-18 | 公立大学法人 滋賀県立大学 | ペロブスカイト太陽電池およびその太陽電池の製造方法 |
KR102496956B1 (ko) * | 2020-10-28 | 2023-02-06 | 포항공과대학교 산학협력단 | 박막 트랜지스터 및 이의 제조 방법 |
CN113346017B (zh) * | 2021-05-21 | 2023-03-24 | 河北大学 | 基于全忆阻器的人工视觉神经系统及其制备方法和应用 |
KR102644645B1 (ko) * | 2022-01-28 | 2024-03-06 | 국민대학교산학협력단 | 자기조립 단분자막을 이용한 태양 전지 모듈 제조 방법 및 이의 이용하여 제조한 태양 전지 모듈 |
WO2023167839A2 (en) * | 2022-03-03 | 2023-09-07 | Massachusetts Institute Of Technology | Adhesive bonding for bifacial and tandem solar cells |
WO2024185793A1 (ja) * | 2023-03-06 | 2024-09-12 | 株式会社エネコートテクノロジーズ | 光電変換素子 |
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US5871579A (en) * | 1997-09-25 | 1999-02-16 | International Business Machines Corporation | Two-step dipping technique for the preparation of organic-inorganic perovskite thin films |
JP2006024495A (ja) * | 2004-07-09 | 2006-01-26 | Sony Corp | 光電変換素子 |
US20060133988A1 (en) * | 2004-12-21 | 2006-06-22 | Showa Denko K.K. | Titanium-containing perovskite composite oxide particle, production process thereof and capacitor |
TWI320974B (en) | 2006-09-27 | 2010-02-21 | Sino American Silicon Prod Inc | Solar cell and method of fabircating the same |
KR100844871B1 (ko) * | 2007-04-06 | 2008-07-09 | 경북대학교 산학협력단 | 염료감응형 태양전지용 염료 및 이를 이용한 태양전지 |
CN101779290B (zh) * | 2007-09-25 | 2013-02-27 | 第一太阳能有限公司 | 包括界面层的光伏器件 |
US8664513B2 (en) * | 2007-10-12 | 2014-03-04 | OmniPV, Inc. | Solar modules with enhanced efficiencies via use of spectral concentrators |
US8774573B2 (en) * | 2009-02-20 | 2014-07-08 | OmniPV, Inc. | Optical devices including resonant cavity structures |
JP2012084374A (ja) * | 2010-10-12 | 2012-04-26 | Sony Corp | 光電変換素子、光電変換素子の製造方法、光電変換素子用電解質層および電子機器 |
CN102831962B (zh) | 2011-06-17 | 2016-09-07 | 比亚迪股份有限公司 | 一种介质导电膜、制备方法及电致变色后视镜 |
US9181475B2 (en) * | 2012-02-21 | 2015-11-10 | Northwestern University | Photoluminescent compounds |
GB201208793D0 (en) | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
WO2013171520A1 (en) * | 2012-05-18 | 2013-11-21 | Isis Innovation Limited | Optoelectronic device comprising perovskites |
CN104737254B (zh) * | 2012-09-12 | 2018-02-27 | 韩国化学研究院 | 具备光吸收结构体的太阳能电池 |
JP6074962B2 (ja) * | 2012-09-13 | 2017-02-08 | 日本ゼオン株式会社 | ペロブスカイト化合物を用いた光電変換素子およびその製造方法 |
CN106684246B (zh) * | 2012-09-18 | 2020-01-21 | 牛津大学科技创新有限公司 | 光电器件 |
JP6037215B2 (ja) * | 2012-09-28 | 2016-12-07 | 学校法人桐蔭学園 | 有機無機ハイブリッド構造からなる光電変換素子 |
JP6128900B2 (ja) * | 2013-03-08 | 2017-05-17 | 大阪瓦斯株式会社 | 無機ホール輸送材を使用したペロブスカイト系光電変換装置 |
WO2014151522A1 (en) | 2013-03-15 | 2014-09-25 | Hunt Energy Enterprises, L.L.C. | Perovskite and other solar cell materials |
WO2014180780A1 (en) * | 2013-05-06 | 2014-11-13 | Greatcell Solar S.A. | Organic-inorganic perovskite based solar cell |
TWI485154B (zh) * | 2013-05-09 | 2015-05-21 | Univ Nat Cheng Kung | 具鈣鈦礦結構吸光材料之有機混成太陽能電池及其製造方法 |
CN103904147A (zh) * | 2014-03-28 | 2014-07-02 | 中国科学院上海技术物理研究所 | 基于纳米氧化物电子传输层的钙钛矿电池 |
CN103956431B (zh) * | 2014-04-30 | 2017-10-20 | 华南理工大学 | 一种溶液加工的有机‑无机平面异质结太阳电池及其制备 |
CN104037244B (zh) | 2014-06-17 | 2016-01-13 | 辽宁工业大学 | 一种晶硅太阳能电池钝化材料Al2O3浓度梯度掺杂ZnO薄膜及制备方法 |
CN104051629B (zh) | 2014-06-28 | 2017-10-20 | 福州大学 | 一种基于喷涂工艺制备钙钛矿型太阳能电池的方法 |
CN104091888B (zh) * | 2014-07-17 | 2016-08-17 | 湖北大学 | 一种钙钛矿型太阳能电池及其制备方法 |
CN104157789A (zh) | 2014-08-28 | 2014-11-19 | 云南师范大学 | 一种新型双面薄膜太阳电池及其工业制造方法 |
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2015
- 2015-11-19 KR KR1020207032564A patent/KR102291847B1/ko active IP Right Grant
- 2015-11-19 KR KR1020187019493A patent/KR101972919B1/ko active IP Right Grant
- 2015-11-19 BR BR122020016555-3A patent/BR122020016555B1/pt active IP Right Grant
- 2015-11-19 CA CA3187474A patent/CA3187474A1/en active Pending
- 2015-11-19 KR KR1020237045113A patent/KR20240006091A/ko active Application Filing
- 2015-11-19 MY MYPI2017701800A patent/MY181178A/en unknown
- 2015-11-19 WO PCT/US2015/061467 patent/WO2016081682A1/en active Application Filing
- 2015-11-19 BR BR112017010550-0A patent/BR112017010550B1/pt active IP Right Grant
- 2015-11-19 KR KR1020217025797A patent/KR102419061B1/ko active IP Right Grant
- 2015-11-19 MX MX2017006646A patent/MX2017006646A/es unknown
- 2015-11-19 CA CA2968367A patent/CA2968367C/en active Active
- 2015-11-19 KR KR1020227040134A patent/KR102514010B1/ko active IP Right Grant
- 2015-11-19 ES ES15860737T patent/ES2812758T3/es active Active
- 2015-11-19 EP EP24187494.0A patent/EP4422379A2/en active Pending
- 2015-11-19 KR KR1020197011510A patent/KR102051980B1/ko active IP Right Grant
- 2015-11-19 CN CN201580073486.4A patent/CN107210134A/zh active Pending
- 2015-11-19 PL PL15860737T patent/PL3221898T3/pl unknown
- 2015-11-19 KR KR1020227023061A patent/KR102469237B1/ko active IP Right Grant
- 2015-11-19 EP EP15860737.4A patent/EP3221898B1/en active Active
- 2015-11-19 JP JP2017527327A patent/JP2018503971A/ja active Pending
- 2015-11-19 KR KR1020177017076A patent/KR101877975B1/ko active IP Right Grant
- 2015-11-19 AU AU2015349902A patent/AU2015349902B2/en active Active
- 2015-11-19 KR KR1020197035242A patent/KR102179880B1/ko active IP Right Grant
- 2015-11-19 KR KR1020237009743A patent/KR102620102B1/ko active IP Right Grant
- 2015-11-19 EP EP20170937.5A patent/EP3706181A1/en active Pending
- 2015-11-19 CN CN202110742042.2A patent/CN113436897A/zh active Pending
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2017
- 2017-05-19 MX MX2020013576A patent/MX2020013576A/es unknown
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2018
- 2018-02-19 AU AU2018201184A patent/AU2018201184B2/en active Active
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2019
- 2019-05-10 AU AU2019203293A patent/AU2019203293B2/en active Active
- 2019-07-02 JP JP2019123320A patent/JP7034124B2/ja active Active
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2020
- 2020-11-13 AU AU2020267316A patent/AU2020267316B2/en active Active
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2022
- 2022-03-01 JP JP2022030573A patent/JP7414871B2/ja active Active
- 2022-07-27 AU AU2022209281A patent/AU2022209281B2/en active Active
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2023
- 2023-12-28 JP JP2023222137A patent/JP2024038190A/ja active Pending
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2024
- 2024-08-26 AU AU2024216353A patent/AU2024216353A1/en active Pending
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