PL2949623T3 - Sposób wytwarzania nanostruktur węglowych i urządzenie - Google Patents

Sposób wytwarzania nanostruktur węglowych i urządzenie

Info

Publication number
PL2949623T3
PL2949623T3 PL12891335.7T PL12891335T PL2949623T3 PL 2949623 T3 PL2949623 T3 PL 2949623T3 PL 12891335 T PL12891335 T PL 12891335T PL 2949623 T3 PL2949623 T3 PL 2949623T3
Authority
PL
Poland
Prior art keywords
producing carbon
carbon nanostructures
nanostructures
producing
carbon
Prior art date
Application number
PL12891335.7T
Other languages
English (en)
Inventor
Mikhail Rudolfovich Predtechenskiy
Original Assignee
Mcd Technologies S.A.R.L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mcd Technologies S.A.R.L filed Critical Mcd Technologies S.A.R.L
Publication of PL2949623T3 publication Critical patent/PL2949623T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/602—Nanotubes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
PL12891335.7T 2013-01-22 2013-01-22 Sposób wytwarzania nanostruktur węglowych i urządzenie PL2949623T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU2012/001053 WO2014116134A1 (ru) 2013-01-22 2013-01-22 Способ получения углеродных наноструктур и аппарат

Publications (1)

Publication Number Publication Date
PL2949623T3 true PL2949623T3 (pl) 2026-03-23

Family

ID=51227834

Family Applications (1)

Application Number Title Priority Date Filing Date
PL12891335.7T PL2949623T3 (pl) 2013-01-22 2013-01-22 Sposób wytwarzania nanostruktur węglowych i urządzenie

Country Status (10)

Country Link
US (1) US20160207770A1 (pl)
EP (1) EP2949623B1 (pl)
JP (1) JP2016510300A (pl)
KR (1) KR101864850B1 (pl)
CN (1) CN104995134B (pl)
CA (1) CA2896462C (pl)
HR (1) HRP20251617T1 (pl)
IL (1) IL239647B (pl)
PL (1) PL2949623T3 (pl)
WO (1) WO2014116134A1 (pl)

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CN106744893A (zh) * 2016-12-19 2017-05-31 厦门大学 可提高批量制备石墨烯质量的氧化剂可控添加装置
CN107029643B (zh) * 2017-05-05 2020-07-07 乐山师范学院 一种真空高温电离放电反应装置
CN110182787B (zh) * 2019-06-19 2022-11-01 江西铜业技术研究院有限公司 一种连续生长碳纳米管的装置及其方法
CN110217777B (zh) * 2019-06-19 2023-05-09 江西铜业技术研究院有限公司 一种碳纳米管制备装置及方法
CN110217778B (zh) * 2019-06-19 2022-11-22 江西铜业技术研究院有限公司 一种连续制备高质量碳纳米管的装置及其制备方法
US20240174517A1 (en) * 2021-03-26 2024-05-30 Yuji MATSUKAWA Method and device for manufacturing carbon nanotube
US20240382924A1 (en) * 2021-10-19 2024-11-21 Lg Chem, Ltd. Apparatus for Synthesizing Carbon Nanotubes
KR102782629B1 (ko) * 2021-11-12 2025-03-19 닥터아이앤비(주) 생산 시간을 단축하고 안정성이 개선된 의약품 제조방법
WO2023197070A1 (en) * 2022-04-14 2023-10-19 Acceleware Ltd. Systems and methods for generating hydrogen by pyrolysis in a dielectrophoresis (dep) supported fluidized bed reactor
KR102797802B1 (ko) * 2022-07-21 2025-04-22 한국기계연구원 탄소나노튜브 합성 장치 및 이를 이용한 탄소나노튜브 합성 방법
KR102809020B1 (ko) * 2022-08-12 2025-05-23 대주전자재료 주식회사 탄소나노튜브의 합성방법 및 합성장치
KR102812801B1 (ko) * 2022-08-12 2025-05-23 대주전자재료 주식회사 열플라즈마를 이용한 탄소나노튜브의 합성방법 및 합성장치

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Also Published As

Publication number Publication date
EP2949623B1 (en) 2025-11-26
CA2896462C (en) 2017-10-31
CN104995134A (zh) 2015-10-21
CA2896462A1 (en) 2014-07-31
RU2573035C2 (ru) 2016-01-20
KR101864850B1 (ko) 2018-06-07
US20160207770A1 (en) 2016-07-21
EP2949623C0 (en) 2025-11-26
JP2016510300A (ja) 2016-04-07
HRP20251617T1 (hr) 2026-02-13
CN104995134B (zh) 2018-06-05
WO2014116134A1 (ru) 2014-07-31
IL239647B (en) 2020-02-27
KR20150108398A (ko) 2015-09-25
RU2013148556A (ru) 2015-05-10
EP2949623A4 (en) 2016-09-14
EP2949623A1 (en) 2015-12-02
IL239647A0 (en) 2015-08-31

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