NO813769L - Hoeytrykks plasmahydrering av silisium-tetraklorid - Google Patents
Hoeytrykks plasmahydrering av silisium-tetrakloridInfo
- Publication number
- NO813769L NO813769L NO813769A NO813769A NO813769L NO 813769 L NO813769 L NO 813769L NO 813769 A NO813769 A NO 813769A NO 813769 A NO813769 A NO 813769A NO 813769 L NO813769 L NO 813769L
- Authority
- NO
- Norway
- Prior art keywords
- plasma
- pressure plasma
- sicl4
- gas
- silicon
- Prior art date
Links
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 title 1
- 229920001296 polysiloxane Polymers 0.000 title 1
- 239000007789 gas Substances 0.000 claims description 28
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 16
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 229910003822 SiHCl3 Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000005494 condensation Effects 0.000 claims 1
- 238000009833 condensation Methods 0.000 claims 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 15
- 239000005049 silicon tetrachloride Substances 0.000 description 15
- 238000006703 hydration reaction Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000036571 hydration Effects 0.000 description 7
- 239000005046 Chlorosilane Substances 0.000 description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 6
- 239000005052 trichlorosilane Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 helium Chemical compound 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S423/00—Chemistry of inorganic compounds
- Y10S423/09—Reaction techniques
- Y10S423/10—Plasma energized
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/148,094 US4309259A (en) | 1980-05-09 | 1980-05-09 | High pressure plasma hydrogenation of silicon tetrachloride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO813769L true NO813769L (no) | 1981-11-12 |
Family
ID=22524246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO813769A NO813769L (no) | 1980-05-09 | 1981-11-09 | Hoeytrykks plasmahydrering av silisium-tetraklorid |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4309259A (da) |
| EP (1) | EP0052615B1 (da) |
| JP (1) | JPS6117765B2 (da) |
| DK (1) | DK4282A (da) |
| IT (1) | IT1170944B (da) |
| NO (1) | NO813769L (da) |
| WO (1) | WO1981003168A1 (da) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2530638A1 (fr) * | 1982-07-26 | 1984-01-27 | Rhone Poulenc Spec Chim | Procede de preparation d'un melange a base de trichlorosilane utilisable pour la preparation de silicium de haute purete |
| US4542004A (en) * | 1984-03-28 | 1985-09-17 | Solavolt International | Process for the hydrogenation of silicon tetrachloride |
| DE3843313A1 (de) * | 1988-12-22 | 1990-06-28 | Wacker Chemitronic | Verfahren zur entfernung von gasfoermigen kontaminierenden, insbesondere dotierstoffverbindungen aus halogensilanverbindungen enthaltenden traegergasen |
| JP2978746B2 (ja) * | 1995-10-31 | 1999-11-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
| DE102006034061A1 (de) * | 2006-07-20 | 2008-01-24 | REV Renewable Energy Ventures, Inc., Aloha | Polysilanverarbeitung und Verwendung |
| DE102006043929B4 (de) * | 2006-09-14 | 2016-10-06 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von festen Polysilanmischungen |
| DE102006050329B3 (de) † | 2006-10-25 | 2007-12-13 | Wacker Chemie Ag | Verfahren zur Herstellung von Trichlorsilan |
| DE102007013219A1 (de) * | 2007-03-15 | 2008-09-18 | Rev Renewable Energy Ventures, Inc. | Plasmagestützte Synthese |
| JP4714196B2 (ja) * | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | トリクロロシランの製造方法および多結晶シリコンの製造方法 |
| CN101254921B (zh) * | 2008-03-19 | 2010-10-06 | 四川金谷多晶硅有限公司 | 一种转化四氯化硅制取三氯氢硅和多晶硅的方法 |
| DE102008025261B4 (de) | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und plasmachemisches Verfahren zu dessen Herstellung |
| DE102008025260B4 (de) | 2008-05-27 | 2010-03-18 | Rev Renewable Energy Ventures, Inc. | Halogeniertes Polysilan und thermisches Verfahren zu dessen Herstellung |
| EP2420113A4 (en) | 2009-04-14 | 2014-04-02 | Rf Thummim Technologies Inc | METHOD AND DEVICE FOR EXPLORING RESONANCES IN MOLECULES |
| KR20120031014A (ko) * | 2009-05-22 | 2012-03-29 | 다우 코닝 코포레이션 | 라만 분광법을 이용한 기상 공정 매개체들의 정량적 측정 방법 |
| DE102009056437B4 (de) | 2009-12-02 | 2013-06-27 | Spawnt Private S.À.R.L. | Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen |
| DE102009056731A1 (de) | 2009-12-04 | 2011-06-09 | Rev Renewable Energy Ventures, Inc. | Halogenierte Polysilane und Polygermane |
| WO2011116187A1 (en) | 2010-03-17 | 2011-09-22 | Rf Thummim Technologies, Inc. | Method and apparatus for electromagnetically producing a disturbance in a medium with simultaneous resonance of acoustic waves created by the disturbance |
| US8029756B1 (en) | 2010-03-30 | 2011-10-04 | Peak Sun Sillcon Corporation | Closed-loop silicon production |
| DE102010025948A1 (de) | 2010-07-02 | 2012-01-05 | Spawnt Private S.À.R.L. | Polysilane mittlerer Kettenlänge und Verfahren zu deren Herstellung |
| KR20140010959A (ko) * | 2011-03-25 | 2014-01-27 | 에보니크 데구사 게엠베하 | 플랜지형 또는 플레어형 말단을 갖는 탄화규소 튜브의 용도 |
| KR101329750B1 (ko) * | 2011-05-18 | 2013-11-14 | (주)그린사이언스 | 플라즈마 수소화 반응 장치 |
| CN104261413B (zh) * | 2014-09-19 | 2016-03-23 | 天津大学 | 低温等离子体还原四氯化硅生产三氯氢硅方法及其装置 |
| CN106495165B (zh) * | 2016-11-23 | 2018-02-16 | 亚洲硅业（青海）有限公司 | 一种以四氯化硅制备三氯氢硅的装置及方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB838378A (en) * | 1956-10-01 | 1960-06-22 | Saint Gobain | An improved process for the production of metals and other chemical elements of metallic character in a state of high purity |
| US3933985A (en) * | 1971-09-24 | 1976-01-20 | Motorola, Inc. | Process for production of polycrystalline silicon |
| US3840750A (en) * | 1972-11-06 | 1974-10-08 | Plasmachem | Plasma apparatus for carrying out high temperature chemical reactions |
| US4102985A (en) * | 1977-01-06 | 1978-07-25 | Westinghouse Electric Corp. | Arc heater production of silicon involving a hydrogen reduction |
-
1980
- 1980-05-09 US US06/148,094 patent/US4309259A/en not_active Expired - Lifetime
-
1981
- 1981-04-06 EP EP81901232A patent/EP0052615B1/en not_active Expired
- 1981-04-06 WO PCT/US1981/000462 patent/WO1981003168A1/en active IP Right Grant
- 1981-04-06 JP JP56501704A patent/JPS6117765B2/ja not_active Expired
- 1981-05-04 IT IT48392/81A patent/IT1170944B/it active
- 1981-11-09 NO NO813769A patent/NO813769L/no unknown
-
1982
- 1982-01-08 DK DK4282A patent/DK4282A/da not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0052615A4 (en) | 1982-09-03 |
| EP0052615B1 (en) | 1985-01-16 |
| EP0052615A1 (en) | 1982-06-02 |
| WO1981003168A1 (en) | 1981-11-12 |
| JPS6117765B2 (da) | 1986-05-09 |
| JPS57500559A (da) | 1982-04-01 |
| DK4282A (da) | 1982-01-08 |
| US4309259A (en) | 1982-01-05 |
| IT8148392A0 (it) | 1981-05-04 |
| IT1170944B (it) | 1987-06-03 |
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