NO314606B1 - Ikke-flyktig minneinnretning - Google Patents
Ikke-flyktig minneinnretning Download PDFInfo
- Publication number
- NO314606B1 NO314606B1 NO20014272A NO20014272A NO314606B1 NO 314606 B1 NO314606 B1 NO 314606B1 NO 20014272 A NO20014272 A NO 20014272A NO 20014272 A NO20014272 A NO 20014272A NO 314606 B1 NO314606 B1 NO 314606B1
- Authority
- NO
- Norway
- Prior art keywords
- memory
- memory device
- ferroelectric
- deuterated
- polymer
- Prior art date
Links
- 230000015654 memory Effects 0.000 claims abstract description 90
- 229920000642 polymer Polymers 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 57
- 230000001747 exhibiting effect Effects 0.000 claims abstract description 3
- 229920001577 copolymer Polymers 0.000 claims description 34
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 30
- 230000010287 polarization Effects 0.000 claims description 29
- 239000011159 matrix material Substances 0.000 claims description 21
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 4
- 229910052805 deuterium Inorganic materials 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229920000131 polyvinylidene Polymers 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229920001897 terpolymer Polymers 0.000 claims description 2
- 239000000178 monomer Substances 0.000 description 21
- 230000007547 defect Effects 0.000 description 13
- 230000005684 electric field Effects 0.000 description 11
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 9
- 230000006399 behavior Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 238000013500 data storage Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DIDAOUIVHLZDQG-UHFFFAOYSA-N C(=C(F)F)F.F.F Chemical group C(=C(F)F)F.F.F DIDAOUIVHLZDQG-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- -1 Poly(vinylidene fluoride) Polymers 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006115 defluorination reaction Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- YFZCNXJOYHYIGC-UHFFFAOYSA-N (2,2,2-trichloroacetyl) 2,2,2-trichloroethaneperoxoate Chemical compound ClC(Cl)(Cl)C(=O)OOC(=O)C(Cl)(Cl)Cl YFZCNXJOYHYIGC-UHFFFAOYSA-N 0.000 description 1
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- DDMOUSALMHHKOS-UHFFFAOYSA-N 1,2-dichloro-1,1,2,2-tetrafluoroethane Chemical compound FC(F)(Cl)C(F)(F)Cl DDMOUSALMHHKOS-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005796 dehydrofluorination reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000004108 freeze drying Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 230000005445 isotope effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- PVFOMCVHYWHZJE-UHFFFAOYSA-N trichloroacetyl chloride Chemical compound ClC(=O)C(Cl)(Cl)Cl PVFOMCVHYWHZJE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Refuse Collection And Transfer (AREA)
- Debugging And Monitoring (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
- Organic Insulating Materials (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20014272A NO314606B1 (no) | 2001-09-03 | 2001-09-03 | Ikke-flyktig minneinnretning |
| AU2002321949A AU2002321949B2 (en) | 2001-09-03 | 2002-08-28 | Non-volatile memory device |
| JP2003525855A JP2005502200A (ja) | 2001-09-03 | 2002-08-28 | 不揮発性メモリデバイス |
| EP02755997A EP1423856B1 (en) | 2001-09-03 | 2002-08-28 | Non-volatile memory device |
| AT02755997T ATE343841T1 (de) | 2001-09-03 | 2002-08-28 | Nichtflüchtiger speicherbaustein |
| CNA028172620A CN1552076A (zh) | 2001-09-03 | 2002-08-28 | 非易失性存储装置 |
| DE60215677T DE60215677T2 (de) | 2001-09-03 | 2002-08-28 | Nichtflüchtiger speicherbaustein |
| PCT/NO2002/000299 WO2003021601A1 (en) | 2001-09-03 | 2002-08-28 | Non-volatile memory device |
| DK02755997T DK1423856T3 (da) | 2001-09-03 | 2002-08-28 | Ikke-flygtig lageranordning |
| KR1020047002948A KR100554676B1 (ko) | 2001-09-03 | 2002-08-28 | 비휘발성 메모리 장치 |
| US10/229,178 US6841818B2 (en) | 2001-09-03 | 2002-08-28 | Non-volatile memory device utilizing dueterated materials |
| ES02755997T ES2274995T3 (es) | 2001-09-03 | 2002-08-28 | Dispositivo de memoria no volatil. |
| RU2004108850/09A RU2275599C2 (ru) | 2001-09-03 | 2002-08-28 | Энергонезависимое запоминающее устройство |
| CA002459319A CA2459319A1 (en) | 2001-09-03 | 2002-08-28 | Non-volatile memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20014272A NO314606B1 (no) | 2001-09-03 | 2001-09-03 | Ikke-flyktig minneinnretning |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20014272D0 NO20014272D0 (no) | 2001-09-03 |
| NO20014272L NO20014272L (no) | 2003-03-04 |
| NO314606B1 true NO314606B1 (no) | 2003-04-14 |
Family
ID=19912793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20014272A NO314606B1 (no) | 2001-09-03 | 2001-09-03 | Ikke-flyktig minneinnretning |
Country Status (13)
| Country | Link |
|---|---|
| EP (1) | EP1423856B1 (zh) |
| JP (1) | JP2005502200A (zh) |
| KR (1) | KR100554676B1 (zh) |
| CN (1) | CN1552076A (zh) |
| AT (1) | ATE343841T1 (zh) |
| AU (1) | AU2002321949B2 (zh) |
| CA (1) | CA2459319A1 (zh) |
| DE (1) | DE60215677T2 (zh) |
| DK (1) | DK1423856T3 (zh) |
| ES (1) | ES2274995T3 (zh) |
| NO (1) | NO314606B1 (zh) |
| RU (1) | RU2275599C2 (zh) |
| WO (1) | WO2003021601A1 (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050114588A1 (en) | 2003-11-26 | 2005-05-26 | Lucker Jonathan C. | Method and apparatus to improve memory performance |
| KR100814031B1 (ko) * | 2006-01-13 | 2008-03-17 | 한국과학기술원 | 폴리머 메모리 소자 및 이의 제조 방법 |
| GB0809840D0 (en) * | 2008-05-30 | 2008-07-09 | Univ Catholique Louvain | Ferroelectric organic memories with ultra-low voltage operation |
| US20150371925A1 (en) * | 2014-06-20 | 2015-12-24 | Intel Corporation | Through array routing for non-volatile memory |
| US9595531B2 (en) | 2014-07-11 | 2017-03-14 | Intel Corporation | Aluminum oxide landing layer for conductive channels for a three dimensional circuit device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT599950A (zh) * | 1958-12-12 | |||
| NO309500B1 (no) * | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
-
2001
- 2001-09-03 NO NO20014272A patent/NO314606B1/no unknown
-
2002
- 2002-08-28 DK DK02755997T patent/DK1423856T3/da active
- 2002-08-28 JP JP2003525855A patent/JP2005502200A/ja not_active Abandoned
- 2002-08-28 DE DE60215677T patent/DE60215677T2/de not_active Expired - Fee Related
- 2002-08-28 AT AT02755997T patent/ATE343841T1/de not_active IP Right Cessation
- 2002-08-28 RU RU2004108850/09A patent/RU2275599C2/ru not_active IP Right Cessation
- 2002-08-28 AU AU2002321949A patent/AU2002321949B2/en not_active Ceased
- 2002-08-28 WO PCT/NO2002/000299 patent/WO2003021601A1/en active IP Right Grant
- 2002-08-28 EP EP02755997A patent/EP1423856B1/en not_active Expired - Lifetime
- 2002-08-28 CA CA002459319A patent/CA2459319A1/en not_active Abandoned
- 2002-08-28 KR KR1020047002948A patent/KR100554676B1/ko not_active IP Right Cessation
- 2002-08-28 CN CNA028172620A patent/CN1552076A/zh active Pending
- 2002-08-28 ES ES02755997T patent/ES2274995T3/es not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| RU2004108850A (ru) | 2005-09-27 |
| AU2002321949B2 (en) | 2006-09-21 |
| NO20014272L (no) | 2003-03-04 |
| DE60215677T2 (de) | 2007-10-04 |
| EP1423856A1 (en) | 2004-06-02 |
| KR20040032982A (ko) | 2004-04-17 |
| RU2275599C2 (ru) | 2006-04-27 |
| CA2459319A1 (en) | 2003-03-13 |
| ES2274995T3 (es) | 2007-06-01 |
| ATE343841T1 (de) | 2006-11-15 |
| NO20014272D0 (no) | 2001-09-03 |
| DK1423856T3 (da) | 2007-02-12 |
| JP2005502200A (ja) | 2005-01-20 |
| KR100554676B1 (ko) | 2006-02-24 |
| DE60215677D1 (de) | 2006-12-07 |
| CN1552076A (zh) | 2004-12-01 |
| EP1423856B1 (en) | 2006-10-25 |
| WO2003021601A1 (en) | 2003-03-13 |
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