NO20014272D0 - Ikke-flyktig minneinnretning - Google Patents

Ikke-flyktig minneinnretning

Info

Publication number
NO20014272D0
NO20014272D0 NO20014272A NO20014272A NO20014272D0 NO 20014272 D0 NO20014272 D0 NO 20014272D0 NO 20014272 A NO20014272 A NO 20014272A NO 20014272 A NO20014272 A NO 20014272A NO 20014272 D0 NO20014272 D0 NO 20014272D0
Authority
NO
Norway
Prior art keywords
memory device
volatile memory
polymers
memory material
remanence
Prior art date
Application number
NO20014272A
Other languages
English (en)
Other versions
NO314606B1 (no
NO20014272L (no
Inventor
Hans Gude Gudesen
Per-Erik Nordal
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20014272A priority Critical patent/NO314606B1/no
Publication of NO20014272D0 publication Critical patent/NO20014272D0/no
Priority to DK02755997T priority patent/DK1423856T3/da
Priority to CA002459319A priority patent/CA2459319A1/en
Priority to ES02755997T priority patent/ES2274995T3/es
Priority to AU2002321949A priority patent/AU2002321949B2/en
Priority to KR1020047002948A priority patent/KR100554676B1/ko
Priority to US10/229,178 priority patent/US6841818B2/en
Priority to CNA028172620A priority patent/CN1552076A/zh
Priority to RU2004108850/09A priority patent/RU2275599C2/ru
Priority to EP02755997A priority patent/EP1423856B1/en
Priority to JP2003525855A priority patent/JP2005502200A/ja
Priority to DE60215677T priority patent/DE60215677T2/de
Priority to PCT/NO2002/000299 priority patent/WO2003021601A1/en
Priority to AT02755997T priority patent/ATE343841T1/de
Publication of NO20014272L publication Critical patent/NO20014272L/no
Publication of NO314606B1 publication Critical patent/NO314606B1/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Organic Insulating Materials (AREA)
  • Refuse Collection And Transfer (AREA)
  • Debugging And Monitoring (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
NO20014272A 2001-09-03 2001-09-03 Ikke-flyktig minneinnretning NO314606B1 (no)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NO20014272A NO314606B1 (no) 2001-09-03 2001-09-03 Ikke-flyktig minneinnretning
AT02755997T ATE343841T1 (de) 2001-09-03 2002-08-28 Nichtflüchtiger speicherbaustein
US10/229,178 US6841818B2 (en) 2001-09-03 2002-08-28 Non-volatile memory device utilizing dueterated materials
RU2004108850/09A RU2275599C2 (ru) 2001-09-03 2002-08-28 Энергонезависимое запоминающее устройство
ES02755997T ES2274995T3 (es) 2001-09-03 2002-08-28 Dispositivo de memoria no volatil.
AU2002321949A AU2002321949B2 (en) 2001-09-03 2002-08-28 Non-volatile memory device
KR1020047002948A KR100554676B1 (ko) 2001-09-03 2002-08-28 비휘발성 메모리 장치
DK02755997T DK1423856T3 (da) 2001-09-03 2002-08-28 Ikke-flygtig lageranordning
CNA028172620A CN1552076A (zh) 2001-09-03 2002-08-28 非易失性存储装置
CA002459319A CA2459319A1 (en) 2001-09-03 2002-08-28 Non-volatile memory device
EP02755997A EP1423856B1 (en) 2001-09-03 2002-08-28 Non-volatile memory device
JP2003525855A JP2005502200A (ja) 2001-09-03 2002-08-28 不揮発性メモリデバイス
DE60215677T DE60215677T2 (de) 2001-09-03 2002-08-28 Nichtflüchtiger speicherbaustein
PCT/NO2002/000299 WO2003021601A1 (en) 2001-09-03 2002-08-28 Non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20014272A NO314606B1 (no) 2001-09-03 2001-09-03 Ikke-flyktig minneinnretning

Publications (3)

Publication Number Publication Date
NO20014272D0 true NO20014272D0 (no) 2001-09-03
NO20014272L NO20014272L (no) 2003-03-04
NO314606B1 NO314606B1 (no) 2003-04-14

Family

ID=19912793

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20014272A NO314606B1 (no) 2001-09-03 2001-09-03 Ikke-flyktig minneinnretning

Country Status (13)

Country Link
EP (1) EP1423856B1 (no)
JP (1) JP2005502200A (no)
KR (1) KR100554676B1 (no)
CN (1) CN1552076A (no)
AT (1) ATE343841T1 (no)
AU (1) AU2002321949B2 (no)
CA (1) CA2459319A1 (no)
DE (1) DE60215677T2 (no)
DK (1) DK1423856T3 (no)
ES (1) ES2274995T3 (no)
NO (1) NO314606B1 (no)
RU (1) RU2275599C2 (no)
WO (1) WO2003021601A1 (no)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050114588A1 (en) 2003-11-26 2005-05-26 Lucker Jonathan C. Method and apparatus to improve memory performance
KR100814031B1 (ko) * 2006-01-13 2008-03-17 한국과학기술원 폴리머 메모리 소자 및 이의 제조 방법
GB0809840D0 (en) * 2008-05-30 2008-07-09 Univ Catholique Louvain Ferroelectric organic memories with ultra-low voltage operation
US20150371925A1 (en) * 2014-06-20 2015-12-24 Intel Corporation Through array routing for non-volatile memory
US9595531B2 (en) 2014-07-11 2017-03-14 Intel Corporation Aluminum oxide landing layer for conductive channels for a three dimensional circuit device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT599950A (no) * 1958-12-12
NO309500B1 (no) * 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme

Also Published As

Publication number Publication date
DK1423856T3 (da) 2007-02-12
NO314606B1 (no) 2003-04-14
EP1423856A1 (en) 2004-06-02
NO20014272L (no) 2003-03-04
CN1552076A (zh) 2004-12-01
EP1423856B1 (en) 2006-10-25
KR20040032982A (ko) 2004-04-17
JP2005502200A (ja) 2005-01-20
KR100554676B1 (ko) 2006-02-24
DE60215677T2 (de) 2007-10-04
WO2003021601A1 (en) 2003-03-13
DE60215677D1 (de) 2006-12-07
ES2274995T3 (es) 2007-06-01
ATE343841T1 (de) 2006-11-15
RU2004108850A (ru) 2005-09-27
CA2459319A1 (en) 2003-03-13
RU2275599C2 (ru) 2006-04-27
AU2002321949B2 (en) 2006-09-21

Similar Documents

Publication Publication Date Title
MY133250A (en) Memory and access devices
ATE414995T1 (de) Polymerer transistor
TR200003053T2 (tr) Kağıttan imal edilen ve bir entegre devreye sahip alt tabaka
HK1049228A1 (en) Electrically addressable volatile and non-volatilemolecular-based switching devices
ATE268049T1 (de) Strukturen mit veränderlichem leitwert
DE60235752D1 (de) Dialysevorrichtung
EP0938096A3 (en) Ferroelectric memory device
ATE398329T1 (de) Leseverstärkersysteme und damit ausgestattete matrixadressierbare speichereinrichtung
DE10196757T1 (de) Leitfähige Polymerzusammensetzungen, die N,N-m-Phenylendimaleinimid enthalten, und Vorrichtungen
PL369208A1 (en) Thin film capacitor using conductive polymers
EP1473736A3 (en) Ferroelectric non-volatile memory device
DE602004032392D1 (de) Dünnfilm-speicherbaustein mit variablem widerstand
ATE355598T1 (de) Elektrischer gegenstand mit dielektrischer epoxyschicht, die mit aminophenylfluorenen gehärtet ist
NO20014272L (no) Ikke-flyktig minneinnretning
WO2003046922A3 (de) Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen
IL157931A0 (en) Electroactive fluorene copolymers and devices made with such polymers
AU2003244054A1 (en) Polymer and polymeric luminescent element comprising the same
TR200400747T4 (tr) Programlanabilir geçici bellek devresi
WO2003044878A3 (en) Polymer material having carrier transport property, and organic thin film element, electronic device, and conductor line which use same
ES2193818A1 (es) Mezclas polimericas conductoras que contienen fibras fibriladas y dispositivos.
WO2005053083A3 (en) Tunable dielectric device and process relating thereto
DE10290740D2 (de) Stromabhängiges resistives Bauelement
ATE319199T1 (de) Crimpkralle eines elektrischen kontaktelements
JP2000124409A5 (no)
ES1055048U (es) Dispositivo de descarga de electricidad estatica.