TR200400747T4 - Programlanabilir geçici bellek devresi - Google Patents

Programlanabilir geçici bellek devresi

Info

Publication number
TR200400747T4
TR200400747T4 TR2004/00747T TR200400747T TR200400747T4 TR 200400747 T4 TR200400747 T4 TR 200400747T4 TR 2004/00747 T TR2004/00747 T TR 2004/00747T TR 200400747 T TR200400747 T TR 200400747T TR 200400747 T4 TR200400747 T4 TR 200400747T4
Authority
TR
Turkey
Prior art keywords
memory circuit
temporary memory
reference point
impedance
programmable temporary
Prior art date
Application number
TR2004/00747T
Other languages
English (en)
Inventor
M. Volk Andrew
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Publication of TR200400747T4 publication Critical patent/TR200400747T4/tr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0005—Modifications of input or output impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Circuits Of Receivers In General (AREA)
  • Communication Control (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)

Abstract

Bir birinci referans noktasindaki potansiyel bir referans voltaji ile önceden saptanmis bir iliskiye sahip olana kadar bir birinci voltaj kaynagi ve bir birinci referans noktasi arasindaki bir birinci empedansin elektronik bir sekilde ayarlanmasiyla bir birinci geçici bellek empedans degeri olusturulmaktadir. Ikinci referans noktasindaki potansiyel referans voltaji ile önceden saptanmis bir iliskiye sahip olana kadar, bir ikinci referans noktasi ve bir ikinci voltaj kaynagi arasindaki empedansin ayarlanmasiyla bir ikinci geçici bellek empedans degeri olusturulmaktadir.
TR2004/00747T 1999-12-23 2000-12-06 Programlanabilir geçici bellek devresi TR200400747T4 (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/472,373 US6347850B1 (en) 1999-12-23 1999-12-23 Programmable buffer circuit

Publications (1)

Publication Number Publication Date
TR200400747T4 true TR200400747T4 (tr) 2004-06-21

Family

ID=23875263

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2004/00747T TR200400747T4 (tr) 1999-12-23 2000-12-06 Programlanabilir geçici bellek devresi

Country Status (11)

Country Link
US (1) US6347850B1 (tr)
EP (1) EP1247341B1 (tr)
CN (1) CN1226826C (tr)
AT (1) ATE261210T1 (tr)
AU (1) AU4713101A (tr)
DE (1) DE60008800T2 (tr)
ES (1) ES2217036T3 (tr)
HK (1) HK1046999B (tr)
TR (1) TR200400747T4 (tr)
TW (1) TW563300B (tr)
WO (1) WO2001047120A2 (tr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6633178B2 (en) 2001-09-28 2003-10-14 Intel Corporation Apparatus and method for power efficient line driver
JP3626452B2 (ja) * 2001-12-27 2005-03-09 株式会社東芝 半導体装置
US6965529B2 (en) 2002-06-21 2005-11-15 Intel Coproration Memory bus termination
US20040263203A1 (en) * 2003-06-27 2004-12-30 Intel Corporation Signal compensation
US7173489B1 (en) 2003-08-25 2007-02-06 Marvell Semiconductor, Inc. Programmable gain voltage buffer
DE10351016B3 (de) * 2003-10-31 2005-06-09 Infineon Technologies Ag Pseudo-dynamische Off-Chip-Treiber-Kalibrierung
US7009894B2 (en) * 2004-02-19 2006-03-07 Intel Corporation Dynamically activated memory controller data termination
US7197591B2 (en) * 2004-06-30 2007-03-27 Intel Corporation Dynamic lane, voltage and frequency adjustment for serial interconnect
JP4159553B2 (ja) * 2005-01-19 2008-10-01 エルピーダメモリ株式会社 半導体装置の出力回路及びこれを備える半導体装置、並びに、出力回路の特性調整方法
US7571406B2 (en) * 2005-08-04 2009-08-04 Freescale Semiconductor, Inc. Clock tree adjustable buffer
US7466174B2 (en) 2006-03-31 2008-12-16 Intel Corporation Fast lock scheme for phase locked loops and delay locked loops
WO2014138091A1 (en) * 2013-03-05 2014-09-12 Silicon Image, Inc. Calibration of single-ended high-speed interfaces

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134311A (en) * 1990-06-07 1992-07-28 International Business Machines Corporation Self-adjusting impedance matching driver
US5254883A (en) * 1992-04-22 1993-10-19 Rambus, Inc. Electrical current source circuitry for a bus
US5457407A (en) * 1994-07-06 1995-10-10 Sony Electronics Inc. Binary weighted reference circuit for a variable impedance output buffer
US5955894A (en) * 1997-06-25 1999-09-21 Sun Microsystems, Inc. Method for controlling the impedance of a driver circuit
US6064224A (en) * 1998-07-31 2000-05-16 Hewlett--Packard Company Calibration sharing for CMOS output driver
US6118310A (en) * 1998-11-04 2000-09-12 Agilent Technologies Digitally controlled output driver and method for impedance matching
US6166563A (en) * 1999-04-26 2000-12-26 Intel Corporation Method and apparatus for dual mode output buffer impedance compensation

Also Published As

Publication number Publication date
WO2001047120A2 (en) 2001-06-28
EP1247341B1 (en) 2004-03-03
CN1435008A (zh) 2003-08-06
AU4713101A (en) 2001-07-03
ES2217036T3 (es) 2004-11-01
HK1046999A1 (en) 2003-01-30
ATE261210T1 (de) 2004-03-15
DE60008800D1 (de) 2004-04-08
DE60008800T2 (de) 2005-02-10
WO2001047120A3 (en) 2002-01-10
US6347850B1 (en) 2002-02-19
HK1046999B (zh) 2004-09-10
EP1247341A2 (en) 2002-10-09
CN1226826C (zh) 2005-11-09
TW563300B (en) 2003-11-21

Similar Documents

Publication Publication Date Title
TR200400747T4 (tr) Programlanabilir geçici bellek devresi
MY133250A (en) Memory and access devices
AU3073800A (en) Semiconductor integrated circuit and nonvolatile memory element
TR200003339A2 (tr) Kompresöre akım ve statik kapasitansı temininin denetlenmesi için cihaz ve metod
NL1013625A1 (nl) Laterale hoogspanning halfgeleiderinrichting.
DE69930586D1 (de) Integrierte Halbleiterspeicherschaltung
SE0002714D0 (sv) An arrangement in a power mosfelt
DE60029554D1 (de) Halbleiterbauelement mit hochspannungselement
DE69010533D1 (de) Ausgangsschaltung mit Ladung/Spannungswandler grosser Verstärkung.
DE60110363D1 (de) Referenzspannungserzeugungsschaltung
DE60037846D1 (de) Synchronhalbleiterspeicheranordnung
DE69927132D1 (de) Verstärker mit variabler verstärkung, niedriger spannung, beta-immunität und hoher speisespannungsunterdrückung
DE68918136D1 (de) Nichtflüchtige Speicherschaltung mit niedriger Leistung und grossem Betriebsspannungsbereich.
DE59900215D1 (de) Referenzspannung-Erzeugungsschaltung
DE69807833T2 (de) Elektro-pyrotechnischer Initialzünder mit drei elektrischen Verbindungen
EP0810732A3 (en) Differential signal generating circuit having current spike suppressing circuit
DE69925877D1 (de) Gitter-Anodeinteraktionsgebiet mit niedriger Impedanz für einen Verstärker mit induktivem Ausgang
DE59913414D1 (de) Smartpower-bauelement
ITTO971022A0 (it) Terminale elettrico.
DE60043331D1 (de) Ausgangsschaltung
DE68924050D1 (de) Schutzanordnung für integrierte Leistungsschaltungen gegen Lastüberspannungen.
DE68924493D1 (de) Schutzschaltung gegen transiente Überspannungen.
TR199600162A2 (tr) Bir elektriksel yükün acilip kapanmasini saglayan devre.
DE60021691D1 (de) Integrierte Halbleiterschaltung mit Selbstprüfungsfunktion
DE60021882D1 (de) Kondensator mit internem sicherungselement