NO20083913L - Fremgangsmate for fremstilling av superledende tynnfilmmateriale, superledende innretning og superledende tynnfilmmateriale - Google Patents

Fremgangsmate for fremstilling av superledende tynnfilmmateriale, superledende innretning og superledende tynnfilmmateriale

Info

Publication number
NO20083913L
NO20083913L NO20083913A NO20083913A NO20083913L NO 20083913 L NO20083913 L NO 20083913L NO 20083913 A NO20083913 A NO 20083913A NO 20083913 A NO20083913 A NO 20083913A NO 20083913 L NO20083913 L NO 20083913L
Authority
NO
Norway
Prior art keywords
layer
superconducting
thin film
film material
superconducting thin
Prior art date
Application number
NO20083913A
Other languages
English (en)
Inventor
Munetsugu Ueyama
Kazuya Ohmatsu
Shuji Hahakura
Katsuya Hasegawa
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of NO20083913L publication Critical patent/NO20083913L/no

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
    • H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
    • H01B12/06—Films or wires on bases or cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0324—Processes for depositing or forming copper oxide superconductor layers from a solution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Fremgangsmåte for fremstilling av et superledende tynnfilmmateriale og hvor det inngår et dampfasetrinn for å danne et superledende lag (3) ved hjelp av en dampfasemetode, og et væskefasetrinn for å danne et superledende lag (4) ved hjelp av en væskefasemetode, slik at det sistenevnte lag (4) kommer i kontakt med det første lag (3). Fortrinnsvis omfatter fremgangsmåten videre dannelsen av et mellomlag (2) mellom det første lag (3) og et substrat (1) av metall. Metallsubstratet (1) er fremstilt av metall, og mellomlaget (2) er fortrinnsvis av et oksid hvis krystallstruktur kan være av blokk- eller edelmetalltypen, av pervoskit-typen eller pyroklor-typen. Laget (3) og laget (4) kan begge ha sammensetningen RE123. Resultatet er at materialets kritiske strømverdi for superledningsevnen kan bedres.
NO20083913A 2006-02-16 2008-09-12 Fremgangsmate for fremstilling av superledende tynnfilmmateriale, superledende innretning og superledende tynnfilmmateriale NO20083913L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006039395A JP2007220467A (ja) 2006-02-16 2006-02-16 超電導薄膜材料の製造方法、超電導機器、および超電導薄膜材料
PCT/JP2007/050592 WO2007094146A1 (ja) 2006-02-16 2007-01-17 超電導薄膜材料の製造方法、超電導機器、および超電導薄膜材料

Publications (1)

Publication Number Publication Date
NO20083913L true NO20083913L (no) 2008-09-12

Family

ID=38371334

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20083913A NO20083913L (no) 2006-02-16 2008-09-12 Fremgangsmate for fremstilling av superledende tynnfilmmateriale, superledende innretning og superledende tynnfilmmateriale

Country Status (11)

Country Link
US (1) US8216979B2 (no)
EP (1) EP1990809B1 (no)
JP (1) JP2007220467A (no)
KR (1) KR101289999B1 (no)
CN (1) CN101385096A (no)
AU (1) AU2007216115A1 (no)
CA (1) CA2641902A1 (no)
NO (1) NO20083913L (no)
RU (1) RU2399106C2 (no)
TW (1) TW200741749A (no)
WO (1) WO2007094146A1 (no)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153281B2 (en) * 2003-06-23 2012-04-10 Superpower, Inc. Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape
JP4690246B2 (ja) * 2006-05-19 2011-06-01 住友電気工業株式会社 超電導薄膜材料およびその製造方法
JP2010040962A (ja) * 2008-08-08 2010-02-18 Sumitomo Electric Ind Ltd 超電導コイル
CN102884594B (zh) 2010-02-05 2016-06-08 株式会社瑞蓝 形成陶瓷线的方法、形成陶瓷线的系统、以及采用其的超导体线
DE102010038656A1 (de) * 2010-07-29 2012-02-02 THEVA DüNNSCHICHTTECHNIK GMBH Hochtemperatur-Supraleiter-Bandleiter mit hoher kritischer Stromtragfähigkeit
JP5838596B2 (ja) * 2011-05-30 2016-01-06 住友電気工業株式会社 超電導薄膜材料およびその製造方法
DE102012223366A1 (de) * 2012-12-17 2014-06-18 Siemens Aktiengesellschaft Supraleitende Spuleneinrichtung mit Spulenwicklung und Kontakten
CN103367626B (zh) * 2013-07-02 2015-08-12 西北有色金属研究院 一种涂层导体超导膜及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2032765C1 (ru) 1987-04-03 1995-04-10 Фудзицу Лимитед Способ нанесения алмазного покрытия из паровой фазы и устройство для его осуществления
JPH01100815A (ja) 1987-10-14 1989-04-19 Fujikura Ltd 高温超電導材
RU2043981C1 (ru) 1992-10-19 1995-09-20 Физико-технический институт им.А.Ф.Иоффе РАН Керамический материал
WO1998043253A1 (en) 1997-03-25 1998-10-01 Nordic Superconductor Technologies A/S Coating of a superconductor
RU2133525C1 (ru) 1997-10-21 1999-07-20 Омский государственный университет Сверхпроводящий квантовый интерференционный датчик и способ его изготовления
US6743533B1 (en) * 1999-04-15 2004-06-01 Fujikura Ltd. Oxide superconductor, manufacturing method thereof, and base substrate therefor
JP2002063815A (ja) * 2000-08-15 2002-02-28 Fujikura Ltd 酸化物超電導導体とその製造方法
JP4433589B2 (ja) * 2000-08-29 2010-03-17 住友電気工業株式会社 高温超電導厚膜部材およびその製造方法
JP3407733B2 (ja) 2000-12-13 2003-05-19 住友電気工業株式会社 無機固体電解質薄膜の形成方法
JP2003324167A (ja) * 2002-02-26 2003-11-14 Kyocera Corp セラミック回路基板
JP4082080B2 (ja) 2002-05-02 2008-04-30 住友電気工業株式会社 薄膜超電導線材およびその製造方法
JP4012772B2 (ja) 2002-07-03 2007-11-21 株式会社フジクラ 酸化物超電導体テープ線材
JP4626134B2 (ja) 2003-09-17 2011-02-02 住友電気工業株式会社 超電導体およびその製造方法
JP4690246B2 (ja) * 2006-05-19 2011-06-01 住友電気工業株式会社 超電導薄膜材料およびその製造方法

Also Published As

Publication number Publication date
KR101289999B1 (ko) 2013-07-30
AU2007216115A1 (en) 2007-08-23
WO2007094146A1 (ja) 2007-08-23
RU2399106C2 (ru) 2010-09-10
RU2008137076A (ru) 2010-03-27
EP1990809A4 (en) 2012-08-01
JP2007220467A (ja) 2007-08-30
EP1990809B1 (en) 2013-07-17
KR20080103558A (ko) 2008-11-27
US8216979B2 (en) 2012-07-10
US20090239753A1 (en) 2009-09-24
EP1990809A1 (en) 2008-11-12
TW200741749A (en) 2007-11-01
CN101385096A (zh) 2009-03-11
CA2641902A1 (en) 2007-08-23

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