NO20072102L - Bildeinspeksjon - Google Patents
BildeinspeksjonInfo
- Publication number
- NO20072102L NO20072102L NO20072102A NO20072102A NO20072102L NO 20072102 L NO20072102 L NO 20072102L NO 20072102 A NO20072102 A NO 20072102A NO 20072102 A NO20072102 A NO 20072102A NO 20072102 L NO20072102 L NO 20072102L
- Authority
- NO
- Norway
- Prior art keywords
- inspection
- camera
- inspect
- imaged
- becomes possible
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
- Measuring And Recording Apparatus For Diagnosis (AREA)
Abstract
I en inspeksjon av en halvlederplate for en mangel når infrarødt lys blir ført gjennom en halvlederplate og blir avbildet av et kamera og en inspeksjon blir utført ved å bruke bildet, er det et problem at halasjon oppstår i kameraet på grunn av lys som dekker for siden av inspeksjonsobjektet og gjør det umulig å utføre en inspeksjon ved den perifere del. Inspeksjonsobjektet blir bestrålt av en infrarød lyskilde og overført lys blir avbildet av et infrarødt kamera. Ved bruk av en maskeanordning som sikrer en klaring fra endedelen av yttersiden, blir det mulig å inspisere den perifere del. Som anordning for å bære objektet, blir flere sett av slike konfigurerte for å kunne evakueres og ved at de flere sett kan evakueres vekslende, blir det mulig å inspisere over hele flaten.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006129218A JP4878907B2 (ja) | 2006-05-08 | 2006-05-08 | 画像検査装置およびこの画像検査装置を用いた画像検査方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
NO20072102L true NO20072102L (no) | 2007-11-09 |
NO338042B1 NO338042B1 (no) | 2016-07-25 |
Family
ID=38293983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20072102A NO338042B1 (no) | 2006-05-08 | 2007-04-23 | Bildeinspeksjonsanordning og bildeinspeksjonsfremgangsmåte som anvender bildeinspeksjonsanordningen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US7569822B2 (no) |
EP (1) | EP1855103B1 (no) |
JP (1) | JP4878907B2 (no) |
CN (1) | CN100590427C (no) |
NO (1) | NO338042B1 (no) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5128920B2 (ja) * | 2007-12-03 | 2013-01-23 | 芝浦メカトロニクス株式会社 | 基板表面検査装置及び基板表面検査方法 |
KR101001113B1 (ko) | 2008-11-12 | 2010-12-14 | 주식회사 코로 | 웨이퍼 결함의 검사장치 및 검사방법 |
KR20110055787A (ko) * | 2009-11-20 | 2011-05-26 | 재단법인 서울테크노파크 | 레이저를 이용한 접합웨이퍼 검사장치 |
KR101115010B1 (ko) * | 2010-07-13 | 2012-03-06 | 한미반도체 주식회사 | 웨이퍼 검사 장치 |
CN103250047A (zh) * | 2010-12-09 | 2013-08-14 | 旭硝子株式会社 | 玻璃带内缺陷测定方法和玻璃带内缺陷测定系统 |
WO2013002179A1 (ja) * | 2011-06-27 | 2013-01-03 | 株式会社ニコン | パターンの評価方法、パターン評価装置、および半導体装置の製造方法 |
JP5323906B2 (ja) * | 2011-09-12 | 2013-10-23 | シャープ株式会社 | 配線欠陥検出方法および配線欠陥検出装置 |
JP5753516B2 (ja) * | 2011-11-28 | 2015-07-22 | 東京エレクトロン株式会社 | 基板撮像装置及び基板撮像方法 |
JP5966704B2 (ja) * | 2012-07-11 | 2016-08-10 | 株式会社島津製作所 | 基板検査装置および基板検査装置用透過照明装置 |
JP5900628B2 (ja) * | 2012-09-05 | 2016-04-06 | 株式会社島津製作所 | 太陽電池セルの検査装置 |
JP2014154708A (ja) * | 2013-02-08 | 2014-08-25 | Disco Abrasive Syst Ltd | ウエーハの割れ検出方法及びウエーハの割れ検出装置 |
TW201511152A (zh) * | 2013-09-09 | 2015-03-16 | Cheng Mei Instr Technology Co Ltd | 線性掃瞄總成 |
DE202013009329U1 (de) | 2013-10-18 | 2014-03-14 | Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e.V. | Hochleistungs-Flächenlichtquelle |
DE102013017501A1 (de) | 2013-10-18 | 2015-04-23 | Institut für innovative Technologien, Technologietransfer, Ausbildung und berufsbegleitende Weiterbildung (ITW) e. V. | Verfahren und Vorrichtung zur Prüfung von Siliziumbauteilen |
CN103604815B (zh) * | 2013-11-26 | 2016-01-13 | 上海海事大学 | 玻璃晶片检测装置与标定方法 |
SG10202110739PA (en) * | 2014-12-05 | 2021-11-29 | Kla Tencor Corp | Apparatus, method and computer program product for defect detection in work pieces |
JP6658051B2 (ja) * | 2016-02-16 | 2020-03-04 | 三菱電機株式会社 | ウエハの検査装置、ウエハの検査方法および半導体装置の製造方法 |
US10692204B2 (en) | 2016-08-01 | 2020-06-23 | The Boeing Company | System and method for high speed surface and subsurface FOD and defect detection |
JP6975551B2 (ja) * | 2017-05-18 | 2021-12-01 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
US10596319B2 (en) | 2017-11-23 | 2020-03-24 | Aesynt Incorporated | Compounding device system |
US10991264B2 (en) * | 2017-11-23 | 2021-04-27 | Omnicell, Inc. | Multi-camera imaging for IV compounding |
US11335444B2 (en) | 2017-11-30 | 2022-05-17 | Omnicell, Inc. | IV compounding systems and methods |
US20190257876A1 (en) * | 2018-02-21 | 2019-08-22 | Asm Technology Singapore Pte Ltd | System and method for detecting defects in an electronic device |
JP7102271B2 (ja) * | 2018-07-17 | 2022-07-19 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
CN109596640B (zh) * | 2018-12-05 | 2021-09-03 | 京东方科技集团股份有限公司 | 异物检测方法及装置 |
JP2021067587A (ja) * | 2019-10-25 | 2021-04-30 | 日本電産サンキョー株式会社 | 外観検査装置 |
CN111122654B (zh) * | 2020-01-14 | 2022-08-12 | 国宏华业投资有限公司 | 一种晶体表面缺陷的双面红外热像检测系统 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01120652A (ja) * | 1987-11-04 | 1989-05-12 | Nec Corp | 入出力装置監視時間設定方式 |
JPH08220008A (ja) * | 1995-02-15 | 1996-08-30 | Mitsubishi Electric Corp | 赤外検査装置 |
EP1526375B1 (en) * | 1997-07-17 | 2006-03-01 | Hoya Corporation | Apparatus for inspecting a transparent material for non-uniformities |
US6236044B1 (en) | 1998-08-21 | 2001-05-22 | Trw Inc. | Method and apparatus for inspection of a substrate by use of a ring illuminator |
WO2002040970A1 (en) * | 2000-11-15 | 2002-05-23 | Real Time Metrology, Inc. | Optical method and apparatus for inspecting large area planar objects |
JP2002214158A (ja) * | 2001-01-19 | 2002-07-31 | Central Glass Co Ltd | 透明板状体の欠点検出方法および検出装置 |
JP2002340794A (ja) * | 2001-05-15 | 2002-11-27 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの赤外吸収測定法 |
US6654109B2 (en) * | 2002-02-05 | 2003-11-25 | Taiwan Semiconductor Manufacturing Co. Ltd | System for detecting surface defects in semiconductor wafers |
JP3948439B2 (ja) * | 2003-07-08 | 2007-07-25 | 三菱電機株式会社 | 密着イメージセンサおよびこれを用いた画像読み取り装置 |
DE102004015326A1 (de) * | 2004-03-30 | 2005-10-20 | Leica Microsystems | Vorrichtung und Verfahren zur Inspektion eines Halbleiterbauteils |
DE102004029212B4 (de) * | 2004-06-16 | 2006-07-13 | Leica Microsystems Semiconductor Gmbh | Vorrichtung und Verfahren zur optischen Auf- und/oder Durchlichtinspektion von Mikrostrukturen im IR |
-
2006
- 2006-05-08 JP JP2006129218A patent/JP4878907B2/ja not_active Expired - Fee Related
-
2007
- 2007-04-17 US US11/785,408 patent/US7569822B2/en not_active Expired - Fee Related
- 2007-04-23 NO NO20072102A patent/NO338042B1/no not_active IP Right Cessation
- 2007-04-29 CN CN200710101136A patent/CN100590427C/zh not_active Expired - Fee Related
- 2007-05-03 EP EP07008985.9A patent/EP1855103B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007303829A (ja) | 2007-11-22 |
EP1855103A2 (en) | 2007-11-14 |
JP4878907B2 (ja) | 2012-02-15 |
NO338042B1 (no) | 2016-07-25 |
CN101071107A (zh) | 2007-11-14 |
CN100590427C (zh) | 2010-02-17 |
EP1855103B1 (en) | 2015-10-21 |
US20070257192A1 (en) | 2007-11-08 |
US7569822B2 (en) | 2009-08-04 |
EP1855103A3 (en) | 2009-12-23 |
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