NO20054486D0 - Elektrisk ladningslagerinnretning med forbedret effektkarakteristikk - Google Patents

Elektrisk ladningslagerinnretning med forbedret effektkarakteristikk

Info

Publication number
NO20054486D0
NO20054486D0 NO20054486A NO20054486A NO20054486D0 NO 20054486 D0 NO20054486 D0 NO 20054486D0 NO 20054486 A NO20054486 A NO 20054486A NO 20054486 A NO20054486 A NO 20054486A NO 20054486 D0 NO20054486 D0 NO 20054486D0
Authority
NO
Norway
Prior art keywords
charge storage
storage device
electric charge
improved power
power characteristics
Prior art date
Application number
NO20054486A
Other languages
English (en)
Other versions
NO20054486L (no
Inventor
Jr William B Duff
Original Assignee
Jr William B Duff
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jr William B Duff filed Critical Jr William B Duff
Publication of NO20054486D0 publication Critical patent/NO20054486D0/no
Publication of NO20054486L publication Critical patent/NO20054486L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/0202—Dielectric layers for electrography
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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    • H01G4/002—Details
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    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/01—Details
    • H01G5/013—Dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/07—Dielectric layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
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    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/02—Details
    • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
    • H01M8/023—Porous and characterised by the material
    • H01M8/0241—Composites
    • H01M8/0245—Composites in the form of layered or coated products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/02—Details
    • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
    • H01M8/0247—Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the form
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/70—Carriers or collectors characterised by shape or form
    • H01M4/78—Shapes other than plane or cylindrical, e.g. helical
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
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    • Y02E60/50—Fuel cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249986—Void-containing component contains also a solid fiber or solid particle

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Secondary Cells (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

Den foreliggende oppfinnelsen omhandler en elektrisk ladningslagerinnretning (ECSD) med forbedrede effektegenskaper. Nærmere bestemt omhandler den foreliggende oppfinnelsen forbedring av strømtetthet, spenningsklassifisering, effektoverføringsegenskaper, frekvensrespons og ladningslagringstetthet for ulike innretninger slik som kondensatorer der kondensator overflatearealet er økt med jevne strukturer og derved å redusere avstanden som skiller kondensatorene og forbedre de dielektriske egenskapene ved å ta i bruk konstruksjonsfremgangsmåter på atomnivå, molekylært nivå og makroskopisk nivå.
NO20054486A 2003-03-05 2005-09-28 Elektrisk ladningslagerinnretning med forbedret effektkarakteristikk NO20054486L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45226603P 2003-03-05 2003-03-05
PCT/US2004/006532 WO2004079793A2 (en) 2003-03-05 2004-03-04 Electrical charge storage device having enhanced power characteristics

Publications (2)

Publication Number Publication Date
NO20054486D0 true NO20054486D0 (no) 2005-09-28
NO20054486L NO20054486L (no) 2005-12-01

Family

ID=32962703

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20054486A NO20054486L (no) 2003-03-05 2005-09-28 Elektrisk ladningslagerinnretning med forbedret effektkarakteristikk

Country Status (14)

Country Link
US (2) US7289312B2 (no)
EP (1) EP1616360A4 (no)
JP (1) JP2006523384A (no)
KR (1) KR20050116809A (no)
CN (1) CN1781201A (no)
AU (1) AU2004216697A1 (no)
BR (1) BRPI0407986A (no)
CA (1) CA2518067A1 (no)
MX (1) MXPA05009393A (no)
NO (1) NO20054486L (no)
RU (1) RU2005130532A (no)
UA (1) UA82086C2 (no)
WO (1) WO2004079793A2 (no)
ZA (1) ZA200506419B (no)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090195961A1 (en) * 2002-07-01 2009-08-06 Rolf Eisenring Method and device for storing electricity in quantum batteries
RU2357313C2 (ru) * 2002-07-01 2009-05-27 Рольф АЙСЕНРИНГ Способ изготовления суперконденсаторов или квантовых аккумуляторов и суперконденсатор или квантовый аккумулятор
CA2518067A1 (en) * 2003-03-05 2004-09-16 William B. Duff, Jr. Electrical charge storage device having enhanced power characteristics
DE10360892A1 (de) * 2003-12-19 2005-07-21 Robert Bosch Gmbh Verfahren und Vorrichtung zur Verschleisserfassung bei Steuergeräten
US20050225412A1 (en) * 2004-03-31 2005-10-13 Limcangco Naomi O Microelectromechanical switch with an arc reduction environment
CN1841587A (zh) * 2005-04-02 2006-10-04 鸿富锦精密工业（深圳）有限公司 电极结构及其制备方法
US7805095B2 (en) * 2006-02-27 2010-09-28 Xerox Corporation Charging device and an image forming device including the same
JP2007273699A (ja) * 2006-03-31 2007-10-18 Sanyo Electric Co Ltd 電気二重層キャパシタ
US7606053B2 (en) * 2006-04-06 2009-10-20 Ford Global Technologies, Llc DC-to-DC converter and electric motor drive system using the same
US8159312B2 (en) * 2007-06-27 2012-04-17 Medrelief Inc. Method and system for signal coupling and direct current blocking
RU2446545C2 (ru) * 2007-10-31 2012-03-27 Рольф АЙСЕНРИНГ Способ и устройство передачи электрической энергии без потерь
US7821771B2 (en) * 2008-04-11 2010-10-26 Northern Lights Semiconductor Corp. Apparatus for storing electrical energy
US8179203B2 (en) 2008-10-09 2012-05-15 The United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration Wireless electrical device using open-circuit elements having no electrical connections
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
AU2010259173B2 (en) 2009-04-24 2015-03-19 Applied Nanostructured Solutions Llc CNT-based signature control material
BRPI1014711A2 (pt) 2009-04-27 2016-04-12 Applied Nanostrctured Solutions Llc aquecimento de resistência com base em cnt para descongelar estruturas de compósito
US9013155B2 (en) * 2010-01-09 2015-04-21 Dais Analytic Corporation Energy storage devices including a solid multilayer electrolyte
WO2011085197A2 (en) * 2010-01-09 2011-07-14 Dais Analytic Corporation Energy storage devices including a solid multilayer electrolyte
US9167736B2 (en) 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
CA2790205A1 (en) 2010-03-02 2011-09-09 Applied Nanostructured Solutions, Llc Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
KR101818640B1 (ko) 2010-03-02 2018-01-15 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. 카본 나노튜브 주입된 섬유를 포함하는 전기 장치 및 그의 제조 방법
US8780526B2 (en) 2010-06-15 2014-07-15 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
EP2629595A2 (en) 2010-09-23 2013-08-21 Applied NanoStructured Solutions, LLC CNT-infused fiber as a self shielding wire for enhanced power transmission line
US9142354B2 (en) * 2010-10-20 2015-09-22 Chun-Yen Chang High energy density and low leakage electronic devices
US9607764B2 (en) 2010-10-20 2017-03-28 Chun-Yen Chang Method of fabricating high energy density and low leakage electronic devices
US8692562B2 (en) 2011-08-01 2014-04-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Wireless open-circuit in-plane strain and displacement sensor requiring no electrical connections
US9014867B2 (en) 2011-09-16 2015-04-21 Varentec, Inc. Systems and methods for edge of network voltage control of a power grid
US9948100B2 (en) 2011-09-16 2018-04-17 Varentec, Inc. Zero droop voltage control for smart inverters
US10541533B2 (en) 2011-09-16 2020-01-21 Varentec, Inc. Systems and methods for edge of network voltage control of a power grid
US9293269B2 (en) * 2012-02-08 2016-03-22 Dais Analytic Corporation Ultracapacitor tolerating electric field of sufficient strength
US9085464B2 (en) 2012-03-07 2015-07-21 Applied Nanostructured Solutions, Llc Resistance measurement system and method of using the same
US9329153B2 (en) 2013-01-02 2016-05-03 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of mapping anomalies in homogenous material
FR3016914B1 (fr) * 2014-01-24 2020-04-24 Cdvi Dispositif anti-remanence pour serrure electromagnetique
AU2015259291A1 (en) * 2014-05-12 2016-11-24 Capacitor Sciences Incorporated Energy storage device and method of production thereof
CN107592939B (zh) * 2014-11-04 2020-05-05 电容器科学股份公司 储能器件及其生产方法
CN105070707B (zh) * 2015-07-16 2018-01-02 江苏中电振华晶体技术有限公司 一种mim电容及其制造方法
WO2018044782A1 (en) * 2016-08-31 2018-03-08 Commscope Technologies Llc Systems and methods for tamper proof cables
FR3057100A1 (fr) * 2016-10-03 2018-04-06 Blue Solutions Condensateur film a tres haute capacite et un procede de fabrication
CN111052279B (zh) * 2017-05-26 2022-07-26 弗莱士功率电容器有限责任公司 高能量密度电容器及无线充电系统
US20190035562A1 (en) 2017-05-26 2019-01-31 Flash Power Capacitors, Llc High energy density capacitor system and method
CN109818122A (zh) * 2017-11-21 2019-05-28 核工业西南物理研究院 一种水冷型大功率电子回旋共振加热系统隔直器
WO2019114913A2 (ar) * 2017-12-14 2019-06-20 محمد أحمد الجميل، استعادة الطاقة فى الأجهزة السعوية التى تعمل بصفة تكرارية
CN109671568B (zh) * 2018-12-14 2021-01-26 扬州宏远电子股份有限公司 一种提高化成箔耐水性的工艺方法
TWI696331B (zh) * 2019-04-10 2020-06-11 唐光輝 充電裝置
CN111740132B (zh) * 2020-05-19 2021-06-18 广东国鸿氢能科技有限公司 一种燃料电池电堆的低温启动方法
DE102022104622B4 (de) * 2022-02-25 2023-11-30 Tdk Electronics Ag Hybrid-Polymer-Kondensator

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1083575A (en) 1963-07-10 1967-09-13 Marconi Co Ltd Improvements in or relating to circuit modules
US4228481A (en) * 1978-10-19 1980-10-14 General Electric Company Capacitor with embossed foil electrode
GB2069240A (en) 1980-02-06 1981-08-19 Draloric Electronic An electrical capacitor
US4730239A (en) * 1986-10-29 1988-03-08 Stemcor Corporation Double layer capacitors with polymeric electrolyte
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH0263106A (ja) 1988-08-29 1990-03-02 Toshiba Lighting & Technol Corp コンデンサ素子
JPH03257856A (ja) 1990-03-07 1991-11-18 Matsushita Electron Corp 半導体装置
JPH03295214A (ja) 1990-04-13 1991-12-26 Mitsubishi Electric Corp コンデンサおよびコイルの複合部品
US5081559A (en) 1991-02-28 1992-01-14 Micron Technology, Inc. Enclosed ferroelectric stacked capacitor
RU2036523C1 (ru) * 1992-07-03 1995-05-27 Многопрофильное научно-техническое и производственно-коммерческое общество с ограниченной ответственностью "Эконд" Конденсатор с двойным электрическим слоем
US5711988A (en) 1992-09-18 1998-01-27 Pinnacle Research Institute, Inc. Energy storage device and its methods of manufacture
US5420747A (en) * 1992-10-12 1995-05-30 Econd Capacitor with a double electric layer cell stack
US5545466A (en) * 1993-03-19 1996-08-13 Mitsui Mining & Smelting Co., Ltd. Copper-clad laminate and printed wiring board
JPH07106206A (ja) * 1993-10-06 1995-04-21 Nec Corp 電気二重層コンデンサ
US5705259A (en) 1994-11-17 1998-01-06 Globe-Union Inc. Method of using a bipolar electrochemical storage device
US5876787A (en) 1995-11-30 1999-03-02 Alfar International, Ltd. Process of manufacturing a porous carbon material and a capacitor having the same
JP3028056B2 (ja) * 1996-02-19 2000-04-04 日本電気株式会社 電気二重層コンデンサ基本セルおよび電気二重層コンデンサ
WO1998005920A1 (en) 1996-08-08 1998-02-12 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
JPH10275748A (ja) * 1997-03-31 1998-10-13 Nec Corp 電気二重層コンデンサ
JP3085250B2 (ja) * 1997-07-18 2000-09-04 日本電気株式会社 電気二重層コンデンサ
US6426862B1 (en) * 1997-12-18 2002-07-30 Nauchno-Proizvodstvennoe Predpriyatie “Exin” Capacitor with dual electric layer
JPH11340430A (ja) 1998-05-27 1999-12-10 Sony Corp 半導体記憶装置およびその製造方法
JP2000058781A (ja) 1998-08-04 2000-02-25 Sony Corp 半導体装置及びその製造方法
WO2000022637A1 (en) * 1998-10-13 2000-04-20 Select Molecular Technologies Corporation High capacitance energy storage device
US6226173B1 (en) * 1999-01-26 2001-05-01 Case Western Reserve University Directionally-grown capacitor anodes
JP2001102273A (ja) * 1999-09-29 2001-04-13 Nec Corp 電気二重層コンデンサ
JP2001185437A (ja) 1999-12-24 2001-07-06 Taiyo Yuden Co Ltd 積層セラミックコンデンサ
US6633154B1 (en) 2000-01-04 2003-10-14 William B. Duff, Jr. Method and circuit for using polarized device in AC applications
CA2518067A1 (en) * 2003-03-05 2004-09-16 William B. Duff, Jr. Electrical charge storage device having enhanced power characteristics
US6916723B2 (en) * 2003-04-25 2005-07-12 Micron Technology, Inc. Methods of forming rugged semiconductor-containing surfaces

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CA2518067A1 (en) 2004-09-16
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RU2005130532A (ru) 2006-06-10
US20040175561A1 (en) 2004-09-09
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