NO20001058L - Tilbakekoplingstyrt lavspent strømkrets - Google Patents

Tilbakekoplingstyrt lavspent strømkrets

Info

Publication number
NO20001058L
NO20001058L NO20001058A NO20001058A NO20001058L NO 20001058 L NO20001058 L NO 20001058L NO 20001058 A NO20001058 A NO 20001058A NO 20001058 A NO20001058 A NO 20001058A NO 20001058 L NO20001058 L NO 20001058L
Authority
NO
Norway
Prior art keywords
mosfet
output
drain
current
gate
Prior art date
Application number
NO20001058A
Other languages
English (en)
Other versions
NO20001058D0 (no
Inventor
John Prentice
Original Assignee
Intersil Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Corp filed Critical Intersil Corp
Publication of NO20001058D0 publication Critical patent/NO20001058D0/no
Publication of NO20001058L publication Critical patent/NO20001058L/no

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/86—Catalytic processes
    • B01D53/88—Handling or mounting catalysts
    • B01D53/885—Devices in general for catalytic purification of waste gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2255/00—Catalysts
    • B01D2255/80—Type of catalytic reaction
    • B01D2255/802—Photocatalytic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/30—Sulfur compounds
    • B01D2257/302—Sulfur oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/40—Nitrogen compounds
    • B01D2257/404—Nitrogen oxides other than dinitrogen oxide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/70—Organic compounds not provided for in groups B01D2257/00 - B01D2257/602
    • B01D2257/708—Volatile organic compounds V.O.C.'s
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/804—UV light
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

Det beskrives en lavspennings MOSFET-konfigurert strømsenke/forsyning som har en utgangsnode koblet til drenet av en utgangs MOSFET, som er strømspeil-koblet med en diode-tilkoblet referansestrøm MOSFET. Utgangs MOSFET har dets port resistorkoblet til porten av referansestrøm MOSFET og dets dren koblet til kilden av en tredje VGS- feedback-kontroll MOSFET av en feedbackkrets som inkluderer en ytterligere strømspeilkrets. Denne tredje MOSFET har sin portelektrode koblet felles med drenportforbindelsen av ref eransestrøm MOSFET. VGS-f,eedback-kontroll MOSFET er koblet med et ytterligere strømspeil, hvis utgang er koblet til portkoblingsresistoren. I respons til et fall i drenkildespenningen VDS av utgangen MOSFET, slik at det punkt-der utgangs MOSFET ikke lenger opererer i sin metningsregion, slås VGS-feedback-kontroll MOSFET på, noe som foråraker flyt av drenstrøm i feeback-kontroll MOSFET. Den ytterligere strømspeilkrets speiler denne drenstrøm gjennom portkoblingsresistor, noe som forårsaker et spenningsfall over den, slik at verdiene av portkilde- spenningen forsynt til utgangs MOSFET øker.
NO20001058A 1999-03-04 2000-03-02 Tilbakekoplingstyrt lavspent strømkrets NO20001058L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/261,981 US6172556B1 (en) 1999-03-04 1999-03-04 Feedback-controlled low voltage current sink/source

Publications (2)

Publication Number Publication Date
NO20001058D0 NO20001058D0 (no) 2000-03-02
NO20001058L true NO20001058L (no) 2000-09-05

Family

ID=22995684

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20001058A NO20001058L (no) 1999-03-04 2000-03-02 Tilbakekoplingstyrt lavspent strømkrets

Country Status (7)

Country Link
US (1) US6172556B1 (no)
EP (1) EP1033642A1 (no)
JP (1) JP2000293248A (no)
KR (1) KR20000071415A (no)
CA (1) CA2296829A1 (no)
NO (1) NO20001058L (no)
TW (1) TW469688B (no)

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US6445223B1 (en) * 2000-11-21 2002-09-03 Intel Corporation Line driver with an integrated termination
US6469548B1 (en) * 2001-06-14 2002-10-22 Cypress Semiconductor Corp. Output buffer crossing point compensation
KR20030002122A (ko) * 2001-06-30 2003-01-08 주식회사 하이닉스반도체 고속 동작을 위한 소오스 폴로우 장치
US6753724B2 (en) * 2002-04-25 2004-06-22 International Business Machines Corporation Impedance enhancement circuit for CMOS low-voltage current source
JP5068419B2 (ja) * 2003-07-28 2012-11-07 ローム株式会社 有機ｅｌ駆動回路およびこれを用いる有機ｅｌ表示装置
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US20080103572A1 (en) 2006-10-31 2008-05-01 Medtronic, Inc. Implantable medical lead with threaded fixation
US8378957B2 (en) * 2008-04-28 2013-02-19 Atmel Corporation Methods and circuits for triode region detection
US8493300B2 (en) * 2008-03-11 2013-07-23 Atmel Corporation Architecture and technique for inter-chip communication
US8581810B2 (en) * 2008-03-11 2013-11-12 Atmel Corporation Methods and circuits for self-calibrating controller
US8314572B2 (en) * 2008-06-24 2012-11-20 Atmel Corporation Apparatus and methodology for enhancing efficiency of a power distribution system having power factor correction capability by using a self-calibrating controller
US8441199B2 (en) * 2009-03-23 2013-05-14 Atmel Corporation Method and apparatus for an intelligent light emitting diode driver having power factor correction capability
US8004350B2 (en) * 2009-06-03 2011-08-23 Infineon Technologies Ag Impedance transformation with transistor circuits
US20110121888A1 (en) * 2009-11-23 2011-05-26 Dario Giotta Leakage current compensation
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WO2014036449A1 (en) 2012-08-31 2014-03-06 Alfred E. Mann Foundation For Scientific Research Feedback controlled coil driver for inductive power transfer
CN105164920B (zh) 2013-03-15 2018-02-06 艾尔弗雷德·E·曼科学研究基金会 具有快速开启时间的电流感测多输出电流刺激器
WO2014146019A2 (en) 2013-03-15 2014-09-18 Alfred E. Mann Foundation For Scientific Research High voltage monitoring successive approximation analog to digital converter
AU2014262145B2 (en) 2013-05-03 2018-10-04 Alfred E. Mann Foundation For Scientific Research Multi-branch stimulation electrode for subcutaneous field stimulation
CA2910943C (en) 2013-05-03 2021-10-26 Alfred E. Mann Foundation For Scientific Research High reliability wire welding for implantable devices
CA2910984C (en) 2013-05-03 2024-04-02 Alfred E. Mann Foundation For Scientific Research Implant recharger handshaking system and method
CN105263572B (zh) 2013-07-29 2017-10-17 艾尔弗雷德·E·曼科学研究基金会 用于植入式装置的高效率磁链路
JP6781865B2 (ja) 2013-07-29 2020-11-11 アルフレッド イー． マン ファウンデーション フォー サイエンティフィック リサーチ マイクロプロセッサ制御されたｅクラスドライバ
CA2958197C (en) 2014-08-15 2023-09-26 Axonics Modulation Technologies, Inc. External pulse generator device and associated methods for trial nerve stimulation
CA2958199C (en) 2014-08-15 2023-03-07 Axonics Modulation Technologies, Inc. Electromyographic lead positioning and stimulation titration in a nerve stimulation system for treatment of overactive bladder
CA2957967C (en) 2014-08-15 2018-11-27 Axonics Modulation Technologies, Inc. Systems and methods for neurostimulation electrode configurations based on neural localization
CN112657054A (zh) 2014-08-15 2021-04-16 艾克索尼克斯调制技术股份有限公司 用于进行神经刺激以减轻膀胱功能障碍和其他适应症的可植入引线附着结构
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JP6791857B2 (ja) 2015-01-09 2020-11-25 アクソニクス モジュレーション テクノロジーズ インコーポレイテッド 埋込可能神経刺激装置のための改良されたアンテナおよび使用方法
US9895546B2 (en) 2015-01-09 2018-02-20 Axonics Modulation Technologies, Inc. Patient remote and associated methods of use with a nerve stimulation system
WO2017011305A1 (en) 2015-07-10 2017-01-19 Axonics Modulation Technologies, Inc. Implantable nerve stimulator having internal electronics without asic and methods of use
US9517338B1 (en) 2016-01-19 2016-12-13 Axonics Modulation Technologies, Inc. Multichannel clip device and methods of use
US10195423B2 (en) 2016-01-19 2019-02-05 Axonics Modulation Technologies, Inc. Multichannel clip device and methods of use
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WO2017139784A1 (en) 2016-02-12 2017-08-17 Axonics Modulation Technologies, Inc. External pulse generator device and associated methods for trial nerve stimulation
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Also Published As

Publication number Publication date
TW469688B (en) 2001-12-21
NO20001058D0 (no) 2000-03-02
CA2296829A1 (en) 2000-09-04
KR20000071415A (ko) 2000-11-25
EP1033642A1 (en) 2000-09-06
JP2000293248A (ja) 2000-10-20
US6172556B1 (en) 2001-01-09

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