NL9402097A - Supergeleidende veldeffektinrichting met korrelgrens kanaal, en werkwijze voor het vervaardigen daarvan. - Google Patents

Supergeleidende veldeffektinrichting met korrelgrens kanaal, en werkwijze voor het vervaardigen daarvan. Download PDF

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Publication number
NL9402097A
NL9402097A NL9402097A NL9402097A NL9402097A NL 9402097 A NL9402097 A NL 9402097A NL 9402097 A NL9402097 A NL 9402097A NL 9402097 A NL9402097 A NL 9402097A NL 9402097 A NL9402097 A NL 9402097A
Authority
NL
Netherlands
Prior art keywords
thin film
superconducting thin
layer
insulating layer
template layer
Prior art date
Application number
NL9402097A
Other languages
English (en)
Dutch (nl)
Inventor
Gun-Yong Sung
Jeong-Dae Suh
Original Assignee
Korea Electronics Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Electronics Telecomm filed Critical Korea Electronics Telecomm
Publication of NL9402097A publication Critical patent/NL9402097A/nl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL9402097A 1994-11-28 1994-12-09 Supergeleidende veldeffektinrichting met korrelgrens kanaal, en werkwijze voor het vervaardigen daarvan. NL9402097A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019940031493A KR0148596B1 (ko) 1994-11-28 1994-11-28 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
KR19940031493 1994-11-28

Publications (1)

Publication Number Publication Date
NL9402097A true NL9402097A (nl) 1996-07-01

Family

ID=19399235

Family Applications (1)

Application Number Title Priority Date Filing Date
NL9402097A NL9402097A (nl) 1994-11-28 1994-12-09 Supergeleidende veldeffektinrichting met korrelgrens kanaal, en werkwijze voor het vervaardigen daarvan.

Country Status (5)

Country Link
US (1) US5846846A (de)
JP (1) JP2798361B2 (de)
KR (1) KR0148596B1 (de)
DE (1) DE4443800C2 (de)
NL (1) NL9402097A (de)

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US6427066B1 (en) * 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030102470A1 (en) * 2001-08-30 2003-06-05 Evgeni Il'ichev Oxygen doping of josephson junctions
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
AU2006236905B2 (en) * 2005-04-15 2010-06-03 The Government Of The United States Of America, As Represented By The Secretary, Department Of Health And Human Services Methods and compositions for producing an enhanced immune response to a human papillomavirus immunogen
US9768371B2 (en) 2012-03-08 2017-09-19 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
EP4142457A1 (de) 2017-02-01 2023-03-01 D-Wave Systems Inc. Systeme und verfahren zur herstellung von supraleitenden integrierten schaltungen
US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits
CN110512286A (zh) * 2019-08-26 2019-11-29 清华大学 交流退火制备FeSe多晶界超导薄膜的方法
US11563162B2 (en) * 2020-01-09 2023-01-24 International Business Machines Corporation Epitaxial Josephson junction transmon device

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JPH0484469A (ja) * 1990-07-27 1992-03-17 Riken Corp 三端子デバイス
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DE69119022T2 (de) * 1990-10-08 1996-10-31 Sumitomo Electric Industries Supraleitende Einrichtung mit ultradünnem Kanal aus oxydisch supraleitendem Material und Verfahren zu deren Herstellung
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EP0582889A1 (de) * 1992-07-28 1994-02-16 Nippon Telegraph And Telephone Corporation Übergangsvorrichtung mit Gitteranpassung und Verfahren zu ihrer Herstellung

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PATENT ABSTRACTS OF JAPAN vol. 016, no. 307 (E - 1229) 7 July 1992 (1992-07-07) *

Also Published As

Publication number Publication date
JP2798361B2 (ja) 1998-09-17
JPH08153908A (ja) 1996-06-11
KR0148596B1 (ko) 1998-10-15
US5846846A (en) 1998-12-08
DE4443800A1 (de) 1996-05-30
DE4443800C2 (de) 1996-11-14
KR960019820A (ko) 1996-06-17

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