NL8701530A - Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. - Google Patents
Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. Download PDFInfo
- Publication number
- NL8701530A NL8701530A NL8701530A NL8701530A NL8701530A NL 8701530 A NL8701530 A NL 8701530A NL 8701530 A NL8701530 A NL 8701530A NL 8701530 A NL8701530 A NL 8701530A NL 8701530 A NL8701530 A NL 8701530A
- Authority
- NL
- Netherlands
- Prior art keywords
- plasma
- plasma generator
- generator
- reactant
- carrying
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 239000000376 reactant Substances 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims description 25
- 238000009832 plasma treatment Methods 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 9
- 239000010406 cathode material Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000012634 fragment Substances 0.000 claims description 4
- 239000007792 gaseous phase Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 3
- 229910052776 Thorium Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract 1
- 238000011010 flushing procedure Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 11
- 238000004381 surface treatment Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- NCEXYHBECQHGNR-UHFFFAOYSA-N chembl421 Chemical compound C1=C(O)C(C(=O)O)=CC(N=NC=2C=CC(=CC=2)S(=O)(=O)NC=2N=CC=CC=2)=C1 NCEXYHBECQHGNR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 102100033717 Retroviral-like aspartic protease 1 Human genes 0.000 description 1
- 101710188689 Small, acid-soluble spore protein 1 Proteins 0.000 description 1
- 101710188693 Small, acid-soluble spore protein 2 Proteins 0.000 description 1
- 101710166422 Small, acid-soluble spore protein A Proteins 0.000 description 1
- 101710166404 Small, acid-soluble spore protein C Proteins 0.000 description 1
- 101710174019 Small, acid-soluble spore protein C1 Proteins 0.000 description 1
- 101710174017 Small, acid-soluble spore protein C2 Proteins 0.000 description 1
- 101710174574 Small, acid-soluble spore protein gamma-type Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8701530A NL8701530A (nl) | 1987-06-30 | 1987-06-30 | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
| ES198888201112T ES2036253T3 (es) | 1987-06-30 | 1988-06-02 | Metodo para tratar superficies de sustratos con ayuda de un plasma y un reactor para realizar el metodo. |
| EP88201112A EP0297637B1 (en) | 1987-06-30 | 1988-06-02 | Method of treating surfaces of substrates with the aid of a plasma and a reactor for carrying out the method |
| AT88201112T ATE82460T1 (de) | 1987-06-30 | 1988-06-02 | Methode zur behandlung der substratoberflaechen mit hilfe von plasma und reaktor fuer die durchfuehrung dieser methode. |
| DE8888201112T DE3875815T2 (de) | 1987-06-30 | 1988-06-02 | Methode zur behandlung der substratoberflaechen mit hilfe von plasma und reaktor fuer die durchfuehrung dieser methode. |
| US07/206,181 US4871580A (en) | 1987-06-30 | 1988-06-13 | Method of treating surfaces of substrates with the aid of a plasma |
| JP63145986A JP2705029B2 (ja) | 1987-06-30 | 1988-06-15 | プラズマによる基板表面処理方法及びそれに使用する装置 |
| CA000569491A CA1324979C (en) | 1987-06-30 | 1988-06-15 | Method of treating surfaces of substrates with the aid of a plasma and a reactor for carrying out the method |
| AU18222/88A AU596935B2 (en) | 1987-06-30 | 1988-06-21 | Method of treating surfaces of substrates with the aid of a plasma |
| GR930400258T GR3007016T3 (OSRAM) | 1987-06-30 | 1993-02-10 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8701530A NL8701530A (nl) | 1987-06-30 | 1987-06-30 | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
| NL8701530 | 1987-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8701530A true NL8701530A (nl) | 1989-01-16 |
Family
ID=19850226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8701530A NL8701530A (nl) | 1987-06-30 | 1987-06-30 | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4871580A (OSRAM) |
| EP (1) | EP0297637B1 (OSRAM) |
| JP (1) | JP2705029B2 (OSRAM) |
| AT (1) | ATE82460T1 (OSRAM) |
| AU (1) | AU596935B2 (OSRAM) |
| CA (1) | CA1324979C (OSRAM) |
| DE (1) | DE3875815T2 (OSRAM) |
| ES (1) | ES2036253T3 (OSRAM) |
| GR (1) | GR3007016T3 (OSRAM) |
| NL (1) | NL8701530A (OSRAM) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0351847A3 (en) * | 1988-07-21 | 1991-03-20 | Nippon Steel Corporation | Modular segmented cathode plasma generator |
| US5356672A (en) * | 1990-05-09 | 1994-10-18 | Jet Process Corporation | Method for microwave plasma assisted supersonic gas jet deposition of thin films |
| JP2706861B2 (ja) * | 1991-07-23 | 1998-01-28 | 動力炉・核燃料開発事業団 | クラスター生成装置 |
| US5565247A (en) * | 1991-08-30 | 1996-10-15 | Canon Kabushiki Kaisha | Process for forming a functional deposited film |
| US5525392A (en) * | 1992-12-10 | 1996-06-11 | International Business Machines Corporation | Magnetic recording medium having a fluorinated polymeric protective layer formed by an ion beam |
| JPH0822945A (ja) * | 1994-07-07 | 1996-01-23 | Fujitsu Ltd | 半導体装置の製造方法 |
| SE9403988L (sv) * | 1994-11-18 | 1996-04-01 | Ladislav Bardos | Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning |
| US5571332A (en) * | 1995-02-10 | 1996-11-05 | Jet Process Corporation | Electron jet vapor deposition system |
| US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
| DE19648999C2 (de) * | 1996-11-27 | 2000-08-03 | Afs Entwicklungs & Vertriebs G | Vorrichtung zur Reinigung, Beschichtung und/oder Aktivierung von Kunststoffoberflächen |
| US6213049B1 (en) | 1997-06-26 | 2001-04-10 | General Electric Company | Nozzle-injector for arc plasma deposition apparatus |
| US6110544A (en) * | 1997-06-26 | 2000-08-29 | General Electric Company | Protective coating by high rate arc plasma deposition |
| KR100265289B1 (ko) * | 1998-01-26 | 2000-09-15 | 윤종용 | 플라즈마식각장치의 캐소우드 제조방법 및 이에 따라 제조되는 캐소우드 |
| US6122050A (en) * | 1998-02-26 | 2000-09-19 | Cornell Research Foundation, Inc. | Optical interface for a radially viewed inductively coupled argon plasma-Optical emission spectrometer |
| US6420032B1 (en) | 1999-03-17 | 2002-07-16 | General Electric Company | Adhesion layer for metal oxide UV filters |
| US6517687B1 (en) | 1999-03-17 | 2003-02-11 | General Electric Company | Ultraviolet filters with enhanced weatherability and method of making |
| US6426125B1 (en) | 1999-03-17 | 2002-07-30 | General Electric Company | Multilayer article and method of making by ARC plasma deposition |
| US6365016B1 (en) | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
| US6261694B1 (en) | 1999-03-17 | 2001-07-17 | General Electric Company | Infrared reflecting coatings |
| TW588222B (en) * | 2000-02-10 | 2004-05-21 | Asml Netherlands Bv | Cooling of voice coil motors in lithographic projection apparatus |
| NL1017849C2 (nl) * | 2001-04-16 | 2002-10-30 | Univ Eindhoven Tech | Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. |
| WO2003017737A2 (en) * | 2001-08-16 | 2003-02-27 | Dow Global Technologies Inc. | Cascade arc plasma and abrasion resistant coatings made therefrom |
| US6948448B2 (en) | 2001-11-27 | 2005-09-27 | General Electric Company | Apparatus and method for depositing large area coatings on planar surfaces |
| US6681716B2 (en) * | 2001-11-27 | 2004-01-27 | General Electric Company | Apparatus and method for depositing large area coatings on non-planar surfaces |
| ATE402277T1 (de) * | 2002-02-05 | 2008-08-15 | Dow Global Technologies Inc | Chemische dampfphasenabscheidung auf einem substrat mittels eines korona-plasmas |
| RU2200058C1 (ru) * | 2002-02-12 | 2003-03-10 | Открытое акционерное общество "ТВЭЛ" | Способ проведения гомогенных и гетерогенных химических реакций с использованием плазмы |
| US6743524B2 (en) | 2002-05-23 | 2004-06-01 | General Electric Company | Barrier layer for an article and method of making said barrier layer by expanding thermal plasma |
| NL1020923C2 (nl) * | 2002-06-21 | 2003-12-23 | Otb Group Bv | Werkwijze alsmede inrichting voor het vervaardigen van een katalysator. |
| NL1021185C2 (nl) * | 2002-07-30 | 2004-02-03 | Fom Inst Voor Plasmafysica | Inrichting voor het behandelen van een oppervlak van een substraat en een plasmabron. |
| US20040229051A1 (en) | 2003-05-15 | 2004-11-18 | General Electric Company | Multilayer coating package on flexible substrates for electro-optical devices |
| JP2006508346A (ja) * | 2002-11-28 | 2006-03-09 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光学検査システム及び当該検査システムに用いられる放射源 |
| NL1022155C2 (nl) * | 2002-12-12 | 2004-06-22 | Otb Group Bv | Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat. |
| US6969953B2 (en) * | 2003-06-30 | 2005-11-29 | General Electric Company | System and method for inductive coupling of an expanding thermal plasma |
| US7282244B2 (en) * | 2003-09-05 | 2007-10-16 | General Electric Company | Replaceable plate expanded thermal plasma apparatus and method |
| NL1025096C2 (nl) * | 2003-12-21 | 2005-06-23 | Otb Group Bv | Werkwijze alsmede inrichting voor het vervaardigen van een functionele laag bestaande uit ten minste twee componenten. |
| US20050139256A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
| US20050139253A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
| US20050139255A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
| EP2261392B1 (en) * | 2004-03-09 | 2018-10-03 | Exatec, LLC. | Expanding thermal plasma deposition system |
| US7354845B2 (en) | 2004-08-24 | 2008-04-08 | Otb Group B.V. | In-line process for making thin film electronic devices |
| US7703413B2 (en) * | 2004-06-28 | 2010-04-27 | Sabic Innovative Plastics Ip B.V. | Expanded thermal plasma apparatus |
| WO2006126133A2 (en) * | 2005-05-26 | 2006-11-30 | Koninklijke Philips Electronics N.V. | Cascade arc radiation source with oxygen scavenging means |
| WO2008007944A1 (en) * | 2006-07-12 | 2008-01-17 | Technische Universiteit Eindhoven | Method and device for treating a substrate by means of a plasma |
| EP1895818B1 (en) * | 2006-08-30 | 2015-03-11 | Sulzer Metco AG | Plasma spraying device and a method for introducing a liquid precursor into a plasma gas system |
| ES2534215T3 (es) | 2006-08-30 | 2015-04-20 | Oerlikon Metco Ag, Wohlen | Dispositivo de pulverización de plasma y un método para la introducción de un precursor líquido en un sistema de gas de plasma |
| DE102006042501B4 (de) * | 2006-09-07 | 2010-11-25 | Eisenmann Anlagenbau Gmbh & Co. Kg | Verfahren und Anlage zum Trocknen von Gegenständen |
| CA2658210A1 (en) | 2008-04-04 | 2009-10-04 | Sulzer Metco Ag | Method and apparatus for the coating and for the surface treatment of substrates by means of a plasma beam |
| NL2003514C2 (en) | 2009-09-18 | 2011-03-21 | Otb Solar Bv | Thin film deposition apparatus and method for the same. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2245779B1 (OSRAM) * | 1973-09-28 | 1978-02-10 | Cit Alcatel |
-
1987
- 1987-06-30 NL NL8701530A patent/NL8701530A/nl not_active Application Discontinuation
-
1988
- 1988-06-02 EP EP88201112A patent/EP0297637B1/en not_active Expired - Lifetime
- 1988-06-02 DE DE8888201112T patent/DE3875815T2/de not_active Expired - Lifetime
- 1988-06-02 AT AT88201112T patent/ATE82460T1/de not_active IP Right Cessation
- 1988-06-02 ES ES198888201112T patent/ES2036253T3/es not_active Expired - Lifetime
- 1988-06-13 US US07/206,181 patent/US4871580A/en not_active Expired - Lifetime
- 1988-06-15 JP JP63145986A patent/JP2705029B2/ja not_active Expired - Lifetime
- 1988-06-15 CA CA000569491A patent/CA1324979C/en not_active Expired - Lifetime
- 1988-06-21 AU AU18222/88A patent/AU596935B2/en not_active Expired
-
1993
- 1993-02-10 GR GR930400258T patent/GR3007016T3/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU1822288A (en) | 1989-01-05 |
| ATE82460T1 (de) | 1992-11-15 |
| DE3875815T2 (de) | 1993-04-29 |
| EP0297637A1 (en) | 1989-01-04 |
| CA1324979C (en) | 1993-12-07 |
| US4871580A (en) | 1989-10-03 |
| AU596935B2 (en) | 1990-05-17 |
| EP0297637B1 (en) | 1992-11-11 |
| JP2705029B2 (ja) | 1998-01-26 |
| JPH01208450A (ja) | 1989-08-22 |
| ES2036253T3 (es) | 1993-05-16 |
| DE3875815D1 (de) | 1992-12-17 |
| GR3007016T3 (OSRAM) | 1993-07-30 |
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