JPH10509833A - プラズマ処理用線形アーク放電発生装置 - Google Patents
プラズマ処理用線形アーク放電発生装置Info
- Publication number
- JPH10509833A JPH10509833A JP8516761A JP51676196A JPH10509833A JP H10509833 A JPH10509833 A JP H10509833A JP 8516761 A JP8516761 A JP 8516761A JP 51676196 A JP51676196 A JP 51676196A JP H10509833 A JPH10509833 A JP H10509833A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrode plate
- arc discharge
- linear
- electrode plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/48—Generating plasma using an arc
- H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.5×104Pa以下のガス圧で反応装置に設置され、かつ交流の発電機及び/ 又はパルス電源(10)によって駆動されるプラズマ処理、特に固体基板の表面処 理用線形アーク放電発生装置であって、 0.4mmを超える距離で互いに対向して配置され、かつ対向電極(3)に接続 された逆極性を有する前記発電機の同極性に接続された少なくとも一対の第1の 電極板(1)及び第2の電極板(2)と、 前記電極板間のスリットの両端間に少なくとも10-3テスラの成分を有する前記 第1の電極板上の線形ホットゾーン(5)及び前記第2の電極板上の線形ホット ゾーン(6)の発生のための磁石(4)によって発生された磁界と、 前記電極板間に必要とされる作用ガス(8)を含み、かつアーク放電(9) が発生される前記電極板及び前記対向電極との電気的接触を有する電離環境(7 )とを特徴とする線形アーク放電発生装置。 2.前記電極板が、横調整素子(13)による前記電極板間の距離の調整及び角の ある調整素子(14)による前記電極板の傾斜の調整の両方を可能にする調整シス テム(12)と接続された主電極本体(11)上に固定されていることを特徴とする 請求項1に記載の装置。 3.前記電極本体及び前記調整システムの側面部で前記作用ガスの流出を保護す る外部カートリッジ(15)であ って、それによって前記作用ガスが、前記電極板間のスリットにおける前記作用 ガスの最適分配のためのガス流分配器(16)によって入れられる外部カートリッ ジ(15)を特徴とする前述の請求項のいずれかに記載の装置。 4.前記対向電極が、反応装置のチャンバ壁の一部及び/又は前記アーク放電に よって処理される基板を有する基板保持器に相当することを特徴とする前述の請 求項のいずれかに記載の装置。 5.前記磁石の位置が調整器(17)によって前記電極板に対して調整され、かつ 前記電極板に沿って、及び前記電極板の両端間の磁界の分配が前記磁石及び/又 は付加磁石(18)によって調整されることを特徴とする前述の請求項のいずれか に記載の装置。 6.前記第1の電極板及び/又は前記第2の電極板が付加側面部(19)によって 装備されていることを特徴とする前述の請求項のいずれかに記載の装置。 7.前記第1の電極板及び第2の電極板が異なる材料から製造されていることを 特徴とする前述の請求項のいずれかに記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9403988A SE9403988L (sv) | 1994-11-18 | 1994-11-18 | Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning |
SE9403988-0 | 1994-11-18 | ||
PCT/SE1995/001248 WO1996016531A1 (en) | 1994-11-18 | 1995-10-20 | An apparatus for generation of a linear arc discharge for plasma processing |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10509833A true JPH10509833A (ja) | 1998-09-22 |
JP3652702B2 JP3652702B2 (ja) | 2005-05-25 |
Family
ID=20396028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51676196A Expired - Fee Related JP3652702B2 (ja) | 1994-11-18 | 1995-10-20 | プラズマ処理用線形アーク放電発生装置 |
Country Status (13)
Country | Link |
---|---|
US (1) | US5908602A (ja) |
EP (1) | EP0792572B1 (ja) |
JP (1) | JP3652702B2 (ja) |
KR (1) | KR100333800B1 (ja) |
AT (1) | ATE182738T1 (ja) |
AU (1) | AU688996B2 (ja) |
CA (1) | CA2205576C (ja) |
DE (1) | DE69511103T2 (ja) |
DK (1) | DK0792572T3 (ja) |
ES (1) | ES2138755T3 (ja) |
NO (1) | NO309920B1 (ja) |
SE (1) | SE9403988L (ja) |
WO (1) | WO1996016531A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001524743A (ja) * | 1997-11-20 | 2001-12-04 | バランコーヴァ ハナ | プラズマ処理装置 |
JP2003528707A (ja) * | 1999-04-28 | 2003-09-30 | バランコーバ ハナ | プラズマ処置理方法及び装置 |
WO2004021748A1 (ja) * | 2002-08-30 | 2004-03-11 | Sekisui Chemical Co., Ltd. | プラズマ処理装置 |
KR101468077B1 (ko) * | 2007-07-19 | 2014-12-05 | 엘아이지에이디피 주식회사 | 상압 플라즈마 처리장치 |
JP2016001607A (ja) * | 2008-08-04 | 2016-01-07 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 |
JP6388146B1 (ja) * | 2017-08-07 | 2018-09-12 | 春日電機株式会社 | 表面改質装置 |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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DE19722624C2 (de) * | 1997-05-30 | 2001-08-09 | Je Plasmaconsult Gmbh | Vorrichtung zur Erzeugung einer Vielzahl von Niedertemperatur-Plasmajets |
US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
US6444945B1 (en) | 2001-03-28 | 2002-09-03 | Cp Films, Inc. | Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source |
US6764658B2 (en) * | 2002-01-08 | 2004-07-20 | Wisconsin Alumni Research Foundation | Plasma generator |
US20030168009A1 (en) * | 2002-03-08 | 2003-09-11 | Denes Ferencz S. | Plasma processing within low-dimension cavities |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
EP1554412B1 (en) * | 2002-09-19 | 2013-08-14 | General Plasma, Inc. | Plasma enhanced chemical vapor deposition apparatus |
JP3933035B2 (ja) * | 2002-11-06 | 2007-06-20 | 富士ゼロックス株式会社 | カーボンナノチューブの製造装置および製造方法 |
US7038389B2 (en) * | 2003-05-02 | 2006-05-02 | Applied Process Technologies, Inc. | Magnetron plasma source |
US7867366B1 (en) | 2004-04-28 | 2011-01-11 | Alameda Applied Sciences Corp. | Coaxial plasma arc vapor deposition apparatus and method |
US8038858B1 (en) | 2004-04-28 | 2011-10-18 | Alameda Applied Sciences Corp | Coaxial plasma arc vapor deposition apparatus and method |
DE102004043967B4 (de) * | 2004-09-11 | 2010-01-07 | Roth & Rau Ag | Anordnung und Verfahren zur Plasmabehandlung eines Substrates |
FR2912864B1 (fr) * | 2007-02-15 | 2009-07-31 | H E F Soc Par Actions Simplifi | Dispositif pour generer un plasma froid dans une enceinte sous vide et utilisation du dispositif pour des traitements thermochimiques |
CA2765337C (en) | 2008-06-13 | 2016-05-17 | Fablab Inc. | A system and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith |
WO2011156876A1 (en) * | 2010-06-18 | 2011-12-22 | Mahle Metal Leve S/A | Plasma processing device |
WO2011156877A1 (en) * | 2010-06-18 | 2011-12-22 | Mahle Metal Leve S/A | Plasma processing device |
US8697198B2 (en) * | 2011-03-31 | 2014-04-15 | Veeco Ald Inc. | Magnetic field assisted deposition |
US9508532B2 (en) | 2013-03-13 | 2016-11-29 | Bb Plasma Design Ab | Magnetron plasma apparatus |
EP3228160B1 (en) | 2014-12-05 | 2021-07-21 | AGC Glass Europe SA | Hollow cathode plasma source |
JP6508746B2 (ja) | 2014-12-05 | 2019-05-08 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | マクロ粒子低減コーティングを利用したプラズマ源ならびにマクロ粒子低減コーティングを用いたプラズマ源を薄膜コーティングおよび表面改質に使用する方法 |
US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
RU168090U1 (ru) * | 2016-06-06 | 2017-01-18 | Акционерное общество "Научно-исследовательский институт оптико-электронного приборостроения" АО "НИИ ОЭП" | Плазменный источник светового излучения |
RU168022U1 (ru) * | 2016-06-15 | 2017-01-17 | Акционерное общество "Научно-исследовательский институт оптико-электронного приборостроения" АО "НИИ ОЭП" | Плазменный источник светового излучения |
KR102216854B1 (ko) * | 2019-09-30 | 2021-02-17 | 포항공과대학교 산학협력단 | 마이크로파 플라즈마를 이용한 아크 방전장치 및 아크 방전방법 |
FR3115180B1 (fr) * | 2020-10-14 | 2022-11-04 | Peter Choi | Appareil de génération de plasma |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US3562141A (en) * | 1968-02-23 | 1971-02-09 | John R Morley | Vacuum vapor deposition utilizing low voltage electron beam |
US4521286A (en) * | 1983-03-09 | 1985-06-04 | Unisearch Limited | Hollow cathode sputter etcher |
FR2581244B1 (fr) * | 1985-04-29 | 1987-07-10 | Centre Nat Rech Scient | Source d'ions du type triode a une seule chambre d'ionisation a excitation haute frequence et a confinement magnetique du type multipolaire |
CS246982B1 (en) * | 1985-06-17 | 1986-11-13 | Ladislav Bardos | Method and apparatus for producing chemically active environment for plasma chemical reactions namely for deposition of thin layers |
DE3606959A1 (de) * | 1986-03-04 | 1987-09-10 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung |
DE3774098D1 (de) * | 1986-12-29 | 1991-11-28 | Sumitomo Metal Ind | Plasmageraet. |
NL8701530A (nl) * | 1987-06-30 | 1989-01-16 | Stichting Fund Ond Material | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
DE69032691T2 (de) * | 1989-12-07 | 1999-06-10 | Japan Science & Tech Corp | Verfahren und Gerät zur Plasmabehandlung unter atmosphärischem Druck |
US5133986A (en) * | 1990-10-05 | 1992-07-28 | International Business Machines Corporation | Plasma enhanced chemical vapor processing system using hollow cathode effect |
US5279723A (en) * | 1992-07-30 | 1994-01-18 | As Represented By The United States Department Of Energy | Filtered cathodic arc source |
DE4235953C2 (de) * | 1992-10-23 | 1998-07-02 | Fraunhofer Ges Forschung | Sputterquelle mit einer linearen Hohlkathode zum reaktiven Beschichten von Substraten |
SE501888C2 (sv) * | 1993-10-18 | 1995-06-12 | Ladislav Bardos | En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden |
-
1994
- 1994-11-18 SE SE9403988A patent/SE9403988L/ not_active IP Right Cessation
-
1995
- 1995-10-20 AU AU39420/95A patent/AU688996B2/en not_active Ceased
- 1995-10-20 DE DE69511103T patent/DE69511103T2/de not_active Expired - Lifetime
- 1995-10-20 DK DK95937260T patent/DK0792572T3/da active
- 1995-10-20 EP EP95937260A patent/EP0792572B1/en not_active Expired - Lifetime
- 1995-10-20 AT AT95937260T patent/ATE182738T1/de not_active IP Right Cessation
- 1995-10-20 US US08/836,708 patent/US5908602A/en not_active Expired - Lifetime
- 1995-10-20 ES ES95937260T patent/ES2138755T3/es not_active Expired - Lifetime
- 1995-10-20 JP JP51676196A patent/JP3652702B2/ja not_active Expired - Fee Related
- 1995-10-20 WO PCT/SE1995/001248 patent/WO1996016531A1/en active IP Right Grant
- 1995-10-20 CA CA002205576A patent/CA2205576C/en not_active Expired - Fee Related
- 1995-10-20 KR KR1019970703347A patent/KR100333800B1/ko not_active IP Right Cessation
-
1997
- 1997-05-20 NO NO972280A patent/NO309920B1/no not_active IP Right Cessation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001524743A (ja) * | 1997-11-20 | 2001-12-04 | バランコーヴァ ハナ | プラズマ処理装置 |
JP2003528707A (ja) * | 1999-04-28 | 2003-09-30 | バランコーバ ハナ | プラズマ処置理方法及び装置 |
JP4699614B2 (ja) * | 1999-04-28 | 2011-06-15 | バランコーバ ハナ | プラズマ処置理方法及び装置 |
WO2004021748A1 (ja) * | 2002-08-30 | 2004-03-11 | Sekisui Chemical Co., Ltd. | プラズマ処理装置 |
US7322313B2 (en) | 2002-08-30 | 2008-01-29 | Sekisui Chemical Co., Ltd. | Plasma processing system |
US7762209B2 (en) | 2002-08-30 | 2010-07-27 | Sekisui Chemical Co., Ltd. | Plasma processing apparatus |
KR101468077B1 (ko) * | 2007-07-19 | 2014-12-05 | 엘아이지에이디피 주식회사 | 상압 플라즈마 처리장치 |
JP2016001607A (ja) * | 2008-08-04 | 2016-01-07 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | プラズマ源、及びプラズマ強化化学蒸着を利用して薄膜被覆を堆積させる方法 |
JP6388146B1 (ja) * | 2017-08-07 | 2018-09-12 | 春日電機株式会社 | 表面改質装置 |
Also Published As
Publication number | Publication date |
---|---|
EP0792572B1 (en) | 1999-07-28 |
ATE182738T1 (de) | 1999-08-15 |
CA2205576A1 (en) | 1996-05-30 |
AU3942095A (en) | 1996-06-17 |
NO309920B1 (no) | 2001-04-17 |
ES2138755T3 (es) | 2000-01-16 |
JP3652702B2 (ja) | 2005-05-25 |
KR100333800B1 (ko) | 2002-11-27 |
DK0792572T3 (da) | 2000-03-13 |
DE69511103T2 (de) | 2000-04-13 |
US5908602A (en) | 1999-06-01 |
NO972280L (no) | 1997-07-10 |
SE503141C2 (sv) | 1996-04-01 |
SE9403988L (sv) | 1996-04-01 |
AU688996B2 (en) | 1998-03-19 |
NO972280D0 (no) | 1997-05-20 |
CA2205576C (en) | 2005-09-20 |
DE69511103D1 (de) | 1999-09-02 |
WO1996016531A1 (en) | 1996-05-30 |
EP0792572A1 (en) | 1997-09-03 |
SE9403988D0 (sv) | 1994-11-18 |
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